JPS57160170A - Field effect semiconductor device - Google Patents

Field effect semiconductor device

Info

Publication number
JPS57160170A
JPS57160170A JP4542681A JP4542681A JPS57160170A JP S57160170 A JPS57160170 A JP S57160170A JP 4542681 A JP4542681 A JP 4542681A JP 4542681 A JP4542681 A JP 4542681A JP S57160170 A JPS57160170 A JP S57160170A
Authority
JP
Japan
Prior art keywords
gate
channel direction
electrode
semiconductor device
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4542681A
Other languages
Japanese (ja)
Inventor
Mikio Tatematsu
Kiyoo Kamei
Shiyouichi Tanimasa
Kazuhiko Inoue
Takeshi Kuramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4542681A priority Critical patent/JPS57160170A/en
Publication of JPS57160170A publication Critical patent/JPS57160170A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To improve the cross modulation characteristic of dual gate FET, by lengthening the first gate electrode in channel direction more than the second gate electrode in channel direction. CONSTITUTION:Each of electrodes a source 3, drain 4, the first gate 5 and second gate 6 are respectively set on the surface of an n type GaAs operating layer 2 distributed on a semi-insulating GaAs substrate 1. The lengths of each electrode the first gate 5 and second gate 6 in the channel direction are respectively supposed to be lG1 and lG2, then lG1>lG2 holds. Thus, the characteristic region i.e. the coupled part of characteristics of the FET1 and FET2 is improved in the voltage linearity of drain current and the first gate source voltage as the ratio of lG2/lG1 decreases.
JP4542681A 1981-03-30 1981-03-30 Field effect semiconductor device Pending JPS57160170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4542681A JPS57160170A (en) 1981-03-30 1981-03-30 Field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4542681A JPS57160170A (en) 1981-03-30 1981-03-30 Field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS57160170A true JPS57160170A (en) 1982-10-02

Family

ID=12718950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4542681A Pending JPS57160170A (en) 1981-03-30 1981-03-30 Field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS57160170A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194681A (en) * 1986-02-20 1987-08-27 Mitsubishi Electric Corp Semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTIONS ON ELECTRON DEVICES=1978 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194681A (en) * 1986-02-20 1987-08-27 Mitsubishi Electric Corp Semiconductor device

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