JPS5762632A - Logical circuit using gate junction type field effect transistor - Google Patents

Logical circuit using gate junction type field effect transistor

Info

Publication number
JPS5762632A
JPS5762632A JP55138030A JP13803080A JPS5762632A JP S5762632 A JPS5762632 A JP S5762632A JP 55138030 A JP55138030 A JP 55138030A JP 13803080 A JP13803080 A JP 13803080A JP S5762632 A JPS5762632 A JP S5762632A
Authority
JP
Japan
Prior art keywords
load
gate
voltage
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55138030A
Other languages
Japanese (ja)
Inventor
Michi Kozuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55138030A priority Critical patent/JPS5762632A/en
Publication of JPS5762632A publication Critical patent/JPS5762632A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To make a logical circuit high-density, by using a normally off-type junction gate field effect transistor as a load of a normally off-type junction gate field effect transistor for logic and by providing a junction diode between the gate and the source of the transistor as a load. CONSTITUTION:N channel normally off-type GaAsMESFETs 10 and 40 for logical operation and load which constitute an NOT circuit are cascaded, and a GaAs Schottky junction diode 50 is connected in the same rectifying direction as gate and source electrodes of the MESFET for load. When a voltage Vl between the drain and the source of the load is minute, the channel is closed by a gate depletion layer and a load current Il is not flowed; but when the voltage Vl is increased, the current Il starts flowing; and when the voltage Vl is increased furthermore, the gate electrode becomes high, but the gate potential becomes a voltage higher by the forward voltage (Vfd) of the diode due to action of the diode 50, and the MESFET for load is biased fixedly to Vfd, and the Il shows a saturation characteristic. This load characteristic is changed optionally by the ratio of gate width of MESFETs.
JP55138030A 1980-10-02 1980-10-02 Logical circuit using gate junction type field effect transistor Pending JPS5762632A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55138030A JPS5762632A (en) 1980-10-02 1980-10-02 Logical circuit using gate junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55138030A JPS5762632A (en) 1980-10-02 1980-10-02 Logical circuit using gate junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5762632A true JPS5762632A (en) 1982-04-15

Family

ID=15212398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55138030A Pending JPS5762632A (en) 1980-10-02 1980-10-02 Logical circuit using gate junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5762632A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2573591A1 (en) * 1984-11-21 1986-05-23 Sony Corp DIRECT-COUPLED FET TRANSISTOR SEMICONDUCTOR LOGIC CIRCUIT
EP0199109A2 (en) * 1985-03-25 1986-10-29 Honeywell Inc. Bootstrap field effect transistor
JPS61292413A (en) * 1985-06-19 1986-12-23 Fujitsu Ltd Semiconductor integrated circuit
JPH04329023A (en) * 1991-04-30 1992-11-17 Toshiba Corp Output buffer circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2573591A1 (en) * 1984-11-21 1986-05-23 Sony Corp DIRECT-COUPLED FET TRANSISTOR SEMICONDUCTOR LOGIC CIRCUIT
US4752701A (en) * 1984-11-21 1988-06-21 Sony Corporation Direct coupled semiconductor logic circuit
EP0199109A2 (en) * 1985-03-25 1986-10-29 Honeywell Inc. Bootstrap field effect transistor
EP0199109A3 (en) * 1985-03-25 1987-08-19 Honeywell Inc. Bootstrap field effect transistor
JPS61292413A (en) * 1985-06-19 1986-12-23 Fujitsu Ltd Semiconductor integrated circuit
JPH04329023A (en) * 1991-04-30 1992-11-17 Toshiba Corp Output buffer circuit
JP2573431B2 (en) * 1991-04-30 1997-01-22 株式会社東芝 Output buffer circuit

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