JPS56134779A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS56134779A
JPS56134779A JP3847180A JP3847180A JPS56134779A JP S56134779 A JPS56134779 A JP S56134779A JP 3847180 A JP3847180 A JP 3847180A JP 3847180 A JP3847180 A JP 3847180A JP S56134779 A JPS56134779 A JP S56134779A
Authority
JP
Japan
Prior art keywords
layer
gate
drain
location adjacent
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3847180A
Other languages
Japanese (ja)
Other versions
JPH023547B2 (en
Inventor
Junichi Nishizawa
Tadahiro Omi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP3847180A priority Critical patent/JPS56134779A/en
Publication of JPS56134779A publication Critical patent/JPS56134779A/en
Publication of JPH023547B2 publication Critical patent/JPH023547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain an IC for a normally OFF type high speed logic gate by providing an upright SIT having an n<+> embedded drain and a p<+> gate on a semi-insulating GaAs substrate, constituting an output terminal by Schottky contact, and using a resistor as a load. CONSTITUTION:An n<+> layer 22 and an n<+> layer 16 are continuously grown on a semi-insulating GaAs 21, protons are irradiated, and separation is made by an i layer 20. An i layer 24 is formed at the location adjacent to the n<+> embedded drain 22, and an unecessary current is interrupted. The n<+> layer 16 is separated by the i layer 20'. A p<+> gate 17 and a p channel 25 are formed at the location adjacent to the n<+> drain 22. The increase in the excessively diffused capacity at the time of the forward bias of the gate drain is prevented, and sufficient cutoff state 1 is formed. A p type load resistor 21 and a p<+> connecting layer 18 are formed at the location adjacent to the p<+> gate 17. An n<+> source 14 is formed on the p channel 25. An electrode 23 is provided as a Schottky diode for a clamp between the gate and the drain over the p<+> layer 17 and the i layer 20'. In this constitution, the IC for high speed logic gate is obtained by using GaAs.
JP3847180A 1980-03-25 1980-03-25 Semiconductor integrated circuit Granted JPS56134779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3847180A JPS56134779A (en) 1980-03-25 1980-03-25 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3847180A JPS56134779A (en) 1980-03-25 1980-03-25 Semiconductor integrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP31380087A Division JPS63296263A (en) 1987-12-10 1987-12-10 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS56134779A true JPS56134779A (en) 1981-10-21
JPH023547B2 JPH023547B2 (en) 1990-01-24

Family

ID=12526151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3847180A Granted JPS56134779A (en) 1980-03-25 1980-03-25 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS56134779A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63296263A (en) * 1987-12-10 1988-12-02 Semiconductor Res Found Semiconductor integrated circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108290A (en) * 1977-03-03 1978-09-20 Seiko Instr & Electronics Ltd Static induction transistor logic
JPS54145486A (en) * 1978-05-08 1979-11-13 Handotai Kenkyu Shinkokai Gaas semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108290A (en) * 1977-03-03 1978-09-20 Seiko Instr & Electronics Ltd Static induction transistor logic
JPS54145486A (en) * 1978-05-08 1979-11-13 Handotai Kenkyu Shinkokai Gaas semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63296263A (en) * 1987-12-10 1988-12-02 Semiconductor Res Found Semiconductor integrated circuit

Also Published As

Publication number Publication date
JPH023547B2 (en) 1990-01-24

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