JPS5710978A - Logic circuit using gaas schottky barrier gate type field effect transistor - Google Patents

Logic circuit using gaas schottky barrier gate type field effect transistor

Info

Publication number
JPS5710978A
JPS5710978A JP8536880A JP8536880A JPS5710978A JP S5710978 A JPS5710978 A JP S5710978A JP 8536880 A JP8536880 A JP 8536880A JP 8536880 A JP8536880 A JP 8536880A JP S5710978 A JPS5710978 A JP S5710978A
Authority
JP
Japan
Prior art keywords
normally
field effect
effect transistor
logic circuit
schottky barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8536880A
Other languages
Japanese (ja)
Other versions
JPS6250990B2 (en
Inventor
Asamitsu Tosaka
Michihiro Kozuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8536880A priority Critical patent/JPS5710978A/en
Publication of JPS5710978A publication Critical patent/JPS5710978A/en
Publication of JPS6250990B2 publication Critical patent/JPS6250990B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV

Abstract

PURPOSE:To compose a logic circuit having a small occupied area and superior design by connecting other normally OFF Tr connected through a gate, a drain, and a resistor to the drain electrode of a normally OFF Tr as a load. CONSTITUTION:A normally OFF GaAsMESFET 54 for load connected through a gate electrode 51, a drain electrode 52, and a resistor 53 is connected to the drain electrode 12 of a GaAs Schottky barrier gate field effect transistor (MESFET)11 as an active element. Such a current-voltage characteristic at a load section shows a saturation characteristic as shown in a drawing and the saturation current Is is almost equal to the saturation current of a same-shaped normally OFF GaAsMESFET. Register 53 is required to be made larger in order to ignore the current flowing into the resistor 53 as compared to the saturation current Is.
JP8536880A 1980-06-24 1980-06-24 Logic circuit using gaas schottky barrier gate type field effect transistor Granted JPS5710978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8536880A JPS5710978A (en) 1980-06-24 1980-06-24 Logic circuit using gaas schottky barrier gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8536880A JPS5710978A (en) 1980-06-24 1980-06-24 Logic circuit using gaas schottky barrier gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5710978A true JPS5710978A (en) 1982-01-20
JPS6250990B2 JPS6250990B2 (en) 1987-10-28

Family

ID=13856767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8536880A Granted JPS5710978A (en) 1980-06-24 1980-06-24 Logic circuit using gaas schottky barrier gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5710978A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61292413A (en) * 1985-06-19 1986-12-23 Fujitsu Ltd Semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61292413A (en) * 1985-06-19 1986-12-23 Fujitsu Ltd Semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS6250990B2 (en) 1987-10-28

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