JPS5247684A - Floating gate type transistor - Google Patents

Floating gate type transistor

Info

Publication number
JPS5247684A
JPS5247684A JP50124058A JP12405875A JPS5247684A JP S5247684 A JPS5247684 A JP S5247684A JP 50124058 A JP50124058 A JP 50124058A JP 12405875 A JP12405875 A JP 12405875A JP S5247684 A JPS5247684 A JP S5247684A
Authority
JP
Japan
Prior art keywords
floating gate
type transistor
gate type
obtianing
channels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50124058A
Other languages
Japanese (ja)
Other versions
JPS5718716B2 (en
Inventor
Terutoshi Sasami
Yasuki Rai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP50124058A priority Critical patent/JPS5247684A/en
Publication of JPS5247684A publication Critical patent/JPS5247684A/en
Publication of JPS5718716B2 publication Critical patent/JPS5718716B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To extend floating gate to the outside of channel regions and provide a control gate, thereby obtianing the same characteristics as those when the width and length of channels are changed.
JP50124058A 1975-10-14 1975-10-14 Floating gate type transistor Granted JPS5247684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50124058A JPS5247684A (en) 1975-10-14 1975-10-14 Floating gate type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50124058A JPS5247684A (en) 1975-10-14 1975-10-14 Floating gate type transistor

Publications (2)

Publication Number Publication Date
JPS5247684A true JPS5247684A (en) 1977-04-15
JPS5718716B2 JPS5718716B2 (en) 1982-04-17

Family

ID=14875915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50124058A Granted JPS5247684A (en) 1975-10-14 1975-10-14 Floating gate type transistor

Country Status (1)

Country Link
JP (1) JPS5247684A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5175210U (en) * 1974-12-11 1976-06-14
US4997781A (en) * 1987-11-24 1991-03-05 Texas Instruments Incorporated Method of making planarized EPROM array
US5894147A (en) * 1994-08-30 1999-04-13 National Semiconductor Corporation Memory transistor having underlapped floating gate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5124186A (en) * 1974-08-23 1976-02-26 Kogyo Gijutsuin FUKIHATSUSEI HANDOTAIMEMORIOYOBISONO SEIHO

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5124186A (en) * 1974-08-23 1976-02-26 Kogyo Gijutsuin FUKIHATSUSEI HANDOTAIMEMORIOYOBISONO SEIHO

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5175210U (en) * 1974-12-11 1976-06-14
US4997781A (en) * 1987-11-24 1991-03-05 Texas Instruments Incorporated Method of making planarized EPROM array
US5894147A (en) * 1994-08-30 1999-04-13 National Semiconductor Corporation Memory transistor having underlapped floating gate

Also Published As

Publication number Publication date
JPS5718716B2 (en) 1982-04-17

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