JPS5332685A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5332685A
JPS5332685A JP10669276A JP10669276A JPS5332685A JP S5332685 A JPS5332685 A JP S5332685A JP 10669276 A JP10669276 A JP 10669276A JP 10669276 A JP10669276 A JP 10669276A JP S5332685 A JPS5332685 A JP S5332685A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory
delays
make
breakdown voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10669276A
Other languages
Japanese (ja)
Inventor
Masaaki Inadate
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10669276A priority Critical patent/JPS5332685A/en
Publication of JPS5332685A publication Critical patent/JPS5332685A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make a semiconductor memory of high electrostatic breakdown voltage, high reliability which does not delays the operation of memory by performing gate production of capacity part.
JP10669276A 1976-09-08 1976-09-08 Semiconductor memory Pending JPS5332685A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10669276A JPS5332685A (en) 1976-09-08 1976-09-08 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10669276A JPS5332685A (en) 1976-09-08 1976-09-08 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS5332685A true JPS5332685A (en) 1978-03-28

Family

ID=14440080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10669276A Pending JPS5332685A (en) 1976-09-08 1976-09-08 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5332685A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712534A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Semiconductor device
JP2008528152A (en) * 2005-01-28 2008-07-31 グリュネンタール・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング Drinking straw with reinforcement

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712534A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Semiconductor device
JP2008528152A (en) * 2005-01-28 2008-07-31 グリュネンタール・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング Drinking straw with reinforcement

Similar Documents

Publication Publication Date Title
NL7607984A (en) SEMICONDUCTOR MEMORY.
JPS5332685A (en) Semiconductor memory
JPS51150284A (en) Semiconductor unvolatile memory unit
JPS5330A (en) Refresh control system
NL7704389A (en) COMPOSITE HIGH VOLTAGE SEMICONDUCTOR.
JPS5380931A (en) Semiconductor lead-only memory
JPS51147931A (en) Semiconductor memory circuit
JPS522270A (en) Gate circuit
JPS525224A (en) 1trs-type memory cell
JPS52137221A (en) Memory device
CH546508A (en) CIRCUIT ARRANGEMENT FOR TRIGGERING AN ELECTRICAL HIGH VOLTAGE GATE.
JPS5333A (en) Semiconductor memory circuit
JPS52119085A (en) Semiconductor memory element
JPS5227522A (en) Transistor inverter
JPS526036A (en) Semiconductor memory circuit
JPS5265667A (en) Semiconductor device
JPS52155928A (en) Semiconductor device
JPS538529A (en) Refreshing method for semiconductor memory
JPS531428A (en) Semiconductor memory
JPS51147133A (en) Non-voratile insulation gate semiconductor memory
JPS5384560A (en) Manufacture for mould type semiconductor device
NL169662C (en) Basic logic circuit, as well as integrated semiconductor device.
JPS5344182A (en) Semiconductor device
JPS5227228A (en) Semiconductor memory
JPS5270734A (en) High voltage generator

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080830

Year of fee payment: 13

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080830

Year of fee payment: 13

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090830

Year of fee payment: 14

LAPS Cancellation because of no payment of annual fees