JPS5712534A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5712534A
JPS5712534A JP8661380A JP8661380A JPS5712534A JP S5712534 A JPS5712534 A JP S5712534A JP 8661380 A JP8661380 A JP 8661380A JP 8661380 A JP8661380 A JP 8661380A JP S5712534 A JPS5712534 A JP S5712534A
Authority
JP
Japan
Prior art keywords
vss
vdd
pads
voltage
doing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8661380A
Other languages
Japanese (ja)
Inventor
Kunihiko Ikuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8661380A priority Critical patent/JPS5712534A/en
Publication of JPS5712534A publication Critical patent/JPS5712534A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To optimize the condition for voltage stress, by providing the wiring for the power source-signal line in an IC in such a manner as to electrically separate by high and low of breakdown voltage required on a circuit. CONSTITUTION:A power source-signal line VDD(VSS) of capacity section of a memory cell and a peripheral circuit line VDD(VSS) are separated and connected to respectively different joining pads. It is possible, by doing so, to impress high voltage, when an IC is inspected in wafer condition, on the capacity section of the memory cell irrespective of a voltage VDD(VSS) of the peripheral circuit, and at the time of assembling, it is also possible to connect these two circuits by two pads. It is also favorable to provide independent pads for VDD(VSS) by peripheral circuits. It is possible, by doing so, to obtain an IC of good quality.
JP8661380A 1980-06-27 1980-06-27 Semiconductor device Pending JPS5712534A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8661380A JPS5712534A (en) 1980-06-27 1980-06-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8661380A JPS5712534A (en) 1980-06-27 1980-06-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5712534A true JPS5712534A (en) 1982-01-22

Family

ID=13891858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8661380A Pending JPS5712534A (en) 1980-06-27 1980-06-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5712534A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130502A (en) * 1996-05-21 2000-10-10 Kabushiki Kaisha Toshiba Cathode assembly, electron gun assembly, electron tube, heater, and method of manufacturing cathode assembly and electron gun assembly

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5125085A (en) * 1974-06-26 1976-03-01 Ibm BUREENAHANDOTAISHUSEKIKAIROCHITSUPUKOZO
JPS5332685A (en) * 1976-09-08 1978-03-28 Hitachi Ltd Semiconductor memory
JPS5420680A (en) * 1977-07-18 1979-02-16 Hitachi Ltd Large scale integrated circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5125085A (en) * 1974-06-26 1976-03-01 Ibm BUREENAHANDOTAISHUSEKIKAIROCHITSUPUKOZO
JPS5332685A (en) * 1976-09-08 1978-03-28 Hitachi Ltd Semiconductor memory
JPS5420680A (en) * 1977-07-18 1979-02-16 Hitachi Ltd Large scale integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130502A (en) * 1996-05-21 2000-10-10 Kabushiki Kaisha Toshiba Cathode assembly, electron gun assembly, electron tube, heater, and method of manufacturing cathode assembly and electron gun assembly

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