JPS525224A - 1trs-type memory cell - Google Patents

1trs-type memory cell

Info

Publication number
JPS525224A
JPS525224A JP50080894A JP8089475A JPS525224A JP S525224 A JPS525224 A JP S525224A JP 50080894 A JP50080894 A JP 50080894A JP 8089475 A JP8089475 A JP 8089475A JP S525224 A JPS525224 A JP S525224A
Authority
JP
Japan
Prior art keywords
1trs
memory cell
type memory
depression
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50080894A
Other languages
Japanese (ja)
Other versions
JPS5634099B2 (en
Inventor
Shinji Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50080894A priority Critical patent/JPS525224A/en
Publication of JPS525224A publication Critical patent/JPS525224A/en
Publication of JPS5634099B2 publication Critical patent/JPS5634099B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To raise read out voltage by using depression-type MIS capacitance element for memory.
JP50080894A 1975-07-02 1975-07-02 1trs-type memory cell Granted JPS525224A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50080894A JPS525224A (en) 1975-07-02 1975-07-02 1trs-type memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50080894A JPS525224A (en) 1975-07-02 1975-07-02 1trs-type memory cell

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2429981A Division JPS56124260A (en) 1981-02-23 1981-02-23 1-transistor type memory cell
JP2430081A Division JPS56124261A (en) 1981-02-23 1981-02-23 Manufacturing of 1-transistor type memory cell

Publications (2)

Publication Number Publication Date
JPS525224A true JPS525224A (en) 1977-01-14
JPS5634099B2 JPS5634099B2 (en) 1981-08-07

Family

ID=13731058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50080894A Granted JPS525224A (en) 1975-07-02 1975-07-02 1trs-type memory cell

Country Status (1)

Country Link
JP (1) JPS525224A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57111880A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Semiconductor storage device
JPS5936262U (en) * 1977-09-30 1984-03-07 横河・ヒユ−レツト・パツカ−ド株式会社 semiconductor memory element
JPS6150361A (en) * 1976-09-13 1986-03-12 テキサス　インスツルメンツ　インコ−ポレイテツド Memory cell
JPS6294975A (en) * 1985-10-22 1987-05-01 Toshiba Corp Semiconductor memory device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
JPS4826039A (en) * 1971-08-02 1973-04-05
JPS4827643A (en) * 1971-08-12 1973-04-12
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell
JPS5046049A (en) * 1973-08-02 1975-04-24

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
JPS4826039A (en) * 1971-08-02 1973-04-05
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell
JPS4827643A (en) * 1971-08-12 1973-04-12
JPS5046049A (en) * 1973-08-02 1975-04-24

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6150361A (en) * 1976-09-13 1986-03-12 テキサス　インスツルメンツ　インコ−ポレイテツド Memory cell
JPS5936262U (en) * 1977-09-30 1984-03-07 横河・ヒユ−レツト・パツカ−ド株式会社 semiconductor memory element
JPS57111880A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Semiconductor storage device
JPS6243278B2 (en) * 1980-12-29 1987-09-12 Fujitsu Ltd
JPS6294975A (en) * 1985-10-22 1987-05-01 Toshiba Corp Semiconductor memory device

Also Published As

Publication number Publication date
JPS5634099B2 (en) 1981-08-07

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