JPS56124261A - Manufacturing of 1-transistor type memory cell - Google Patents

Manufacturing of 1-transistor type memory cell

Info

Publication number
JPS56124261A
JPS56124261A JP2430081A JP2430081A JPS56124261A JP S56124261 A JPS56124261 A JP S56124261A JP 2430081 A JP2430081 A JP 2430081A JP 2430081 A JP2430081 A JP 2430081A JP S56124261 A JPS56124261 A JP S56124261A
Authority
JP
Japan
Prior art keywords
layer
vdd
membrane
memory cell
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2430081A
Other languages
Japanese (ja)
Inventor
Shinji Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2430081A priority Critical patent/JPS56124261A/en
Publication of JPS56124261A publication Critical patent/JPS56124261A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To improve S-N ratio in a memory cell, by separately providing an n layer on a capacity section of a p type substrate and providing an electrode through an insulating membrane, and also by providing, in a switching FET section, an n layer on a gate insulating membrane with the electrode as a mask. CONSTITUTION:After a gate oxide membrane 2 was formed on a p type substrate 1, ion is selectively driven in a MIS capacity forming section to provide n layer 5. Gate electrodes 6 and 7 are formed by an electric conductive poly Si on the membrane 2, and an n<+> type drain and source are formed with these as masks. In this mechanism, the storing MIS capacity becomes depletion type, and when ''1'' level of the storing voltage is set to VDD and a threshold value of FET is set to VT, read voltage becomes higher by VDD/VDD-VT, and therefore, S-N ratio is improved. If another p<+> layer is added to the bottom of the channel layer 5, the read voltage can be further improved.
JP2430081A 1981-02-23 1981-02-23 Manufacturing of 1-transistor type memory cell Pending JPS56124261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2430081A JPS56124261A (en) 1981-02-23 1981-02-23 Manufacturing of 1-transistor type memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2430081A JPS56124261A (en) 1981-02-23 1981-02-23 Manufacturing of 1-transistor type memory cell

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50080894A Division JPS525224A (en) 1975-07-02 1975-07-02 1trs-type memory cell

Publications (1)

Publication Number Publication Date
JPS56124261A true JPS56124261A (en) 1981-09-29

Family

ID=12134312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2430081A Pending JPS56124261A (en) 1981-02-23 1981-02-23 Manufacturing of 1-transistor type memory cell

Country Status (1)

Country Link
JP (1) JPS56124261A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5282159A (en) * 1991-11-15 1994-01-25 Sharp Kabushiki Kaisha Semiconductor memory with increased capacitive storage capabilities and reduced size

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5282159A (en) * 1991-11-15 1994-01-25 Sharp Kabushiki Kaisha Semiconductor memory with increased capacitive storage capabilities and reduced size

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