JPS55150269A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS55150269A
JPS55150269A JP5831679A JP5831679A JPS55150269A JP S55150269 A JPS55150269 A JP S55150269A JP 5831679 A JP5831679 A JP 5831679A JP 5831679 A JP5831679 A JP 5831679A JP S55150269 A JPS55150269 A JP S55150269A
Authority
JP
Japan
Prior art keywords
type
fet
sit
gate
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5831679A
Other languages
Japanese (ja)
Other versions
JPS6231503B2 (en
Inventor
Junichi Nishizawa
Tadahiro Omi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP5831679A priority Critical patent/JPS55150269A/en
Publication of JPS55150269A publication Critical patent/JPS55150269A/en
Publication of JPS6231503B2 publication Critical patent/JPS6231503B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To operate a semiconductor integrated circuit at sufficiently low power voltage with a p-channel insulated gate type drain positive n-channel SIT gate commonly used as a load and a driver, respectively. CONSTITUTION:An n<+>-type layer 12 and an n<->-type layer 13 are formed on a p- type substrate 1, and p<+>-type layers 16, 17 and n<+>-type layers 14, 15 are formed at predetermined positions thereon. The p<+>-type layer 16 is the drain of the FET and the gate of the SIT. The n<+>-type layers 14, 12 are the source of the SIT and the buried drain thereof. A p<->-type layer 22 is now formed directly under the gate insulated film of the FET of the load, and the area density QSS of the positive charge at the insulating layer boundary is presented and there is relationship NA. d>=QSS where the NA represents the impurity density and d represents depth. When the NA.d is large, the current of the FET increased, and when the current of the FET is sufficiently increased, it becomes a depletion type. The density of the channel of the SIT and the size thereof are selected to be of type for normally opening. At this time the threshold voltage of the FET becomes not high but operates at lower voltage sufficiently.
JP5831679A 1979-05-11 1979-05-11 Semiconductor integrated circuit Granted JPS55150269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5831679A JPS55150269A (en) 1979-05-11 1979-05-11 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5831679A JPS55150269A (en) 1979-05-11 1979-05-11 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS55150269A true JPS55150269A (en) 1980-11-22
JPS6231503B2 JPS6231503B2 (en) 1987-07-08

Family

ID=13080849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5831679A Granted JPS55150269A (en) 1979-05-11 1979-05-11 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS55150269A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS592346A (en) * 1982-06-28 1984-01-07 Semiconductor Res Found Semiconductor integrated circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6478909A (en) * 1987-09-19 1989-03-24 Mazda Motor Suspension device for vehicle

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS592346A (en) * 1982-06-28 1984-01-07 Semiconductor Res Found Semiconductor integrated circuit
JPH0427706B2 (en) * 1982-06-28 1992-05-12 Handotai Kenkyu Shinkokai

Also Published As

Publication number Publication date
JPS6231503B2 (en) 1987-07-08

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