JPS57136362A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57136362A
JPS57136362A JP56022629A JP2262981A JPS57136362A JP S57136362 A JPS57136362 A JP S57136362A JP 56022629 A JP56022629 A JP 56022629A JP 2262981 A JP2262981 A JP 2262981A JP S57136362 A JPS57136362 A JP S57136362A
Authority
JP
Japan
Prior art keywords
drains
sources
semiconductor layers
constitute
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56022629A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP56022629A priority Critical patent/JPS57136362A/en
Publication of JPS57136362A publication Critical patent/JPS57136362A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Abstract

PURPOSE:To form a matrix of a laminated channel type IG semiconductor device in high density by a method wherein semiconductor layers for sources (drains) are arranged in columns on a substrate, and semiconductors for gates and drains (sources) are arranged in rows. CONSTITUTION:A transparent electrode 20 and the first semiconductor layers 2 to constitute the sources (drains) are provided being arranged in the columns on the transparent substrate 1. Then after the second semiconductor layers 4 to constitute channel regions and the third semiconductor layers 5 to constitute the drains (sources) are provided being arranged in the rows, the gate insulating film 16 is formed, and conductive layers 17 for electrodes are provided. Accordingly the matrix of the laminated channel type insulated gate semiconductor device can be formed in high density, and this method is suitable for enhancement of photo sensibility as the photo detector.
JP56022629A 1981-02-17 1981-02-17 Semiconductor device Pending JPS57136362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56022629A JPS57136362A (en) 1981-02-17 1981-02-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56022629A JPS57136362A (en) 1981-02-17 1981-02-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57136362A true JPS57136362A (en) 1982-08-23

Family

ID=12088112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56022629A Pending JPS57136362A (en) 1981-02-17 1981-02-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57136362A (en)

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