JPS5793568A - Semiconductor image pickup element - Google Patents

Semiconductor image pickup element

Info

Publication number
JPS5793568A
JPS5793568A JP55170072A JP17007280A JPS5793568A JP S5793568 A JPS5793568 A JP S5793568A JP 55170072 A JP55170072 A JP 55170072A JP 17007280 A JP17007280 A JP 17007280A JP S5793568 A JPS5793568 A JP S5793568A
Authority
JP
Japan
Prior art keywords
image pickup
pickup element
gate
overflow
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55170072A
Other languages
Japanese (ja)
Other versions
JPS6320385B2 (en
Inventor
Takao Kamata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55170072A priority Critical patent/JPS5793568A/en
Publication of JPS5793568A publication Critical patent/JPS5793568A/en
Publication of JPS6320385B2 publication Critical patent/JPS6320385B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To obtain a highly integrated simiconductor image pickup element by disposing an overflow drain under an overflow control gate and reducing an area occupying the blooming preventing structure. CONSTITUTION:Boron is injected as a guard ring 202 to a P type substrate 201, and a field oxidized film 210 is formed using a selective oxidation. Then, to take a direct contact, a hole is opened, a multilayer crystalline silicon layer is formed, phosphorus is diffused, and an overflow drain 203 is formed. Thereafter, a polycrystalline layer is patterned by a photoresist pattern and a plasma etching method to form an overflow control gate 208 and a transfer gate 207. Subsequently, a BDC transfer clock gate 206, a photodiode diffused layer 204 and a light shielding aluminum 209 are formed as a semiconductor image pickup element.
JP55170072A 1980-12-02 1980-12-02 Semiconductor image pickup element Granted JPS5793568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55170072A JPS5793568A (en) 1980-12-02 1980-12-02 Semiconductor image pickup element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55170072A JPS5793568A (en) 1980-12-02 1980-12-02 Semiconductor image pickup element

Publications (2)

Publication Number Publication Date
JPS5793568A true JPS5793568A (en) 1982-06-10
JPS6320385B2 JPS6320385B2 (en) 1988-04-27

Family

ID=15898110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55170072A Granted JPS5793568A (en) 1980-12-02 1980-12-02 Semiconductor image pickup element

Country Status (1)

Country Link
JP (1) JPS5793568A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132655A (en) * 1983-01-19 1984-07-30 Matsushita Electric Ind Co Ltd Solid-state image pickup device
JPS59132659A (en) * 1983-01-20 1984-07-30 Matsushita Electric Ind Co Ltd Solid-state image pickup device
JPS60246673A (en) * 1984-05-22 1985-12-06 Nec Corp Solid-state image pickup element
US6195873B1 (en) * 1999-09-08 2001-03-06 Advanced Micro Devices, Inc. Method for decreasing contact resistance

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5324795A (en) * 1976-08-19 1978-03-07 Philips Nv Camera tube
JPS5385187A (en) * 1977-01-03 1978-07-27 Reticon Corp Photodiode array
JPS5390721A (en) * 1977-01-20 1978-08-09 Sony Corp Solid pickup element
JPS5432089A (en) * 1977-08-15 1979-03-09 Matsushita Electronics Corp Solid syate pickup device
JPS5531333A (en) * 1978-08-28 1980-03-05 Sony Corp Solid state pickup device
JPS5558581A (en) * 1978-10-26 1980-05-01 Fujitsu Ltd Infrared rays detector
JPS5586274A (en) * 1978-12-22 1980-06-28 Nec Corp Charge transfer pickup unit and its driving method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5324795A (en) * 1976-08-19 1978-03-07 Philips Nv Camera tube
JPS5385187A (en) * 1977-01-03 1978-07-27 Reticon Corp Photodiode array
JPS5390721A (en) * 1977-01-20 1978-08-09 Sony Corp Solid pickup element
JPS5432089A (en) * 1977-08-15 1979-03-09 Matsushita Electronics Corp Solid syate pickup device
JPS5531333A (en) * 1978-08-28 1980-03-05 Sony Corp Solid state pickup device
JPS5558581A (en) * 1978-10-26 1980-05-01 Fujitsu Ltd Infrared rays detector
JPS5586274A (en) * 1978-12-22 1980-06-28 Nec Corp Charge transfer pickup unit and its driving method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132655A (en) * 1983-01-19 1984-07-30 Matsushita Electric Ind Co Ltd Solid-state image pickup device
JPH035672B2 (en) * 1983-01-19 1991-01-28 Matsushita Electric Ind Co Ltd
JPS59132659A (en) * 1983-01-20 1984-07-30 Matsushita Electric Ind Co Ltd Solid-state image pickup device
JPS60246673A (en) * 1984-05-22 1985-12-06 Nec Corp Solid-state image pickup element
US6195873B1 (en) * 1999-09-08 2001-03-06 Advanced Micro Devices, Inc. Method for decreasing contact resistance

Also Published As

Publication number Publication date
JPS6320385B2 (en) 1988-04-27

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