JPS59101450U - solid-state image sensor - Google Patents
solid-state image sensorInfo
- Publication number
- JPS59101450U JPS59101450U JP19932282U JP19932282U JPS59101450U JP S59101450 U JPS59101450 U JP S59101450U JP 19932282 U JP19932282 U JP 19932282U JP 19932282 U JP19932282 U JP 19932282U JP S59101450 U JPS59101450 U JP S59101450U
- Authority
- JP
- Japan
- Prior art keywords
- solid
- image sensor
- state image
- high concentration
- concentration region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来例を示す平面図、第２図は第１図の従来例
を説明するための図、第３図は他の従来例を示す断面図
、第４図は更に他の従来例を示す断面図、第５図は第４
図の従来例を説明するための図、第６図はこの考案の一
実施例を示す断面図、第７図は第６図実施例の動作を説
明するための電位分布図、第８図は第６図実施例の変形
例を示す断面図である。Fig. 1 is a plan view showing a conventional example, Fig. 2 is a diagram for explaining the conventional example shown in Fig. 1, Fig. 3 is a cross-sectional view showing another conventional example, and Fig. 4 is yet another conventional example. 5 is a sectional view showing the 4th
6 is a sectional view showing an embodiment of the invention, FIG. 7 is a potential distribution diagram for explaining the operation of the embodiment of FIG. 6, and FIG. FIG. 6 is a sectional view showing a modification of the embodiment of FIG. 6;
Claims (1)
部に形成された高濃度領域とを有し、この高濃度領域の
近傍に実効的にオーバーフローコントロールゲートをな
すように基体及び上記高濃、 度領域の間に所定の電圧
を印加するよ・うにしたことを特徴とする固体撮像素子
。It has an insulating layer forming an isolation region and a high concentration region formed below the insulating layer, and the substrate and the high concentration region are arranged so as to form an effective overflow control gate near the high concentration region. A solid-state imaging device characterized in that a predetermined voltage is applied between regions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19932282U JPS59101450U (en) | 1982-12-27 | 1982-12-27 | solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19932282U JPS59101450U (en) | 1982-12-27 | 1982-12-27 | solid-state image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59101450U true JPS59101450U (en) | 1984-07-09 |
Family
ID=30424861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19932282U Pending JPS59101450U (en) | 1982-12-27 | 1982-12-27 | solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59101450U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62296551A (en) * | 1986-06-17 | 1987-12-23 | Matsushita Electronics Corp | Solid-state image sensing device |
-
1982
- 1982-12-27 JP JP19932282U patent/JPS59101450U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62296551A (en) * | 1986-06-17 | 1987-12-23 | Matsushita Electronics Corp | Solid-state image sensing device |
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