JPS5834750U - solid-state image sensor - Google Patents

solid-state image sensor

Info

Publication number
JPS5834750U
JPS5834750U JP12863381U JP12863381U JPS5834750U JP S5834750 U JPS5834750 U JP S5834750U JP 12863381 U JP12863381 U JP 12863381U JP 12863381 U JP12863381 U JP 12863381U JP S5834750 U JPS5834750 U JP S5834750U
Authority
JP
Japan
Prior art keywords
solid
image sensor
state image
light
aluminum oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12863381U
Other languages
Japanese (ja)
Inventor
竹下　光明
浜崎　正治
名雲　文男
Original Assignee
ソニー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ソニー株式会社 filed Critical ソニー株式会社
Priority to JP12863381U priority Critical patent/JPS5834750U/en
Publication of JPS5834750U publication Critical patent/JPS5834750U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来の固体撮像素子について説明するための図
、第２図は本考案に係る固体撮像素子の一例を示す部分
断面図、第３図は第２図に示される例の一部分の形成方
法を説明するための工程図、第４図は本考案に係る固体
撮像素子の他の例を示す部分断面図、第５図は第４図に
示される例の一部分の形成方法を説明するための工程図
である。 図中、１は半導体基体、２は感光部、３は非感光部、４
は絶縁層、５は転送電極、７はフィルタ層、９及び１３
は酸化アルミニウム遮光層、９′及び１３′は開口、１
０はレジスト、１１及び１４は酸化アルミニウム膜、１
２は”アルミニウム　　膜である。FIG. 1 is a diagram for explaining a conventional solid-state imaging device, FIG. 2 is a partial cross-sectional view showing an example of a solid-state imaging device according to the present invention, and FIG. 3 is a partial formation of the example shown in FIG. 2. FIG. 4 is a partial sectional view showing another example of the solid-state imaging device according to the present invention, and FIG. 5 is a process diagram for explaining the method of forming a part of the example shown in FIG. 4. This is a process diagram. In the figure, 1 is a semiconductor substrate, 2 is a photosensitive part, 3 is a non-photosensitive part, and 4
is an insulating layer, 5 is a transfer electrode, 7 is a filter layer, 9 and 13
is an aluminum oxide light-shielding layer, 9' and 13' are openings, 1
0 is a resist, 11 and 14 are aluminum oxide films, 1
2 is an aluminum film.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体基体に形成今れた受光面の非感光部上に、スパッ
ターリング法により形成された酸化アルミニウム遮光層
が配された固体撮像素子。A solid-state image sensor in which an aluminum oxide light-shielding layer formed by a sputtering method is disposed on a non-light-sensitive portion of a light-receiving surface formed on a semiconductor substrate.
JP12863381U 1981-08-29 1981-08-29 solid-state image sensor Pending JPS5834750U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12863381U JPS5834750U (en) 1981-08-29 1981-08-29 solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12863381U JPS5834750U (en) 1981-08-29 1981-08-29 solid-state image sensor

Publications (1)

Publication Number Publication Date
JPS5834750U true JPS5834750U (en) 1983-03-07

Family

ID=29922321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12863381U Pending JPS5834750U (en) 1981-08-29 1981-08-29 solid-state image sensor

Country Status (1)

Country Link
JP (1) JPS5834750U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5897861A (en) * 1981-12-08 1983-06-10 Canon Inc Sensor having directivity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5897861A (en) * 1981-12-08 1983-06-10 Canon Inc Sensor having directivity

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