JPS60151151U - photosensitive device - Google Patents

photosensitive device

Info

Publication number
JPS60151151U
JPS60151151U JP3834684U JP3834684U JPS60151151U JP S60151151 U JPS60151151 U JP S60151151U JP 3834684 U JP3834684 U JP 3834684U JP 3834684 U JP3834684 U JP 3834684U JP S60151151 U JPS60151151 U JP S60151151U
Authority
JP
Japan
Prior art keywords
substrate
periphery
diode element
light
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3834684U
Other languages
Japanese (ja)
Inventor
勝 武内
三郎 中島
中山　正一郎
中野　昭一
桑野　幸徳
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP3834684U priority Critical patent/JPS60151151U/en
Publication of JPS60151151U publication Critical patent/JPS60151151U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来装置の断面図、第２図は本考案装置の一実
施例の断面図で、１は基板、２は感光ダイオード素子、
３は回路ダイオード素子、４，５は半導体膜、８は第１
金属電極膜、９は第２金属電極膜、１２は絶縁膜、を夫
々示している。FIG. 1 is a sectional view of a conventional device, and FIG. 2 is a sectional view of an embodiment of the device of the present invention, where 1 is a substrate, 2 is a photosensitive diode element,
3 is a circuit diode element, 4 and 5 are semiconductor films, and 8 is a first
A metal electrode film, 9 a second metal electrode film, and 12 an insulating film are shown, respectively.

Claims (2)

【実用新案登録請求の範囲】[Scope of utility model registration request] （１）透光性基板の一方の主面に、同一の半導体膜から
形成された感光ダイオード素子と回路ダイオード素子と
るを並置した感光装置に於いて、上記回路ダイオード素
子を形成する半導体膜の一方の主面と上記透光性基板の
一方の主面との間に配挿せしめられる遮光性第１電極膜
の全周縁は、上記半導体膜の周縁より外方に延出すると
共に、上記半導体膜の他方の主面に被着される遮光性第
２電極膜は、上記基板の一方の主面に対し絶縁膜により
被覆された上記遮光性第１電極膜の周縁から延在してい
ることを特徴とした感光装置。(1) In a photosensitive device in which a photosensitive diode element and a circuit diode element formed from the same semiconductor film are juxtaposed on one main surface of a light-transmitting substrate, one of the semiconductor films forming the circuit diode element is arranged side by side. The entire periphery of the light-shielding first electrode film disposed between the main surface of the substrate and one main surface of the light-transmitting substrate extends outward from the periphery of the semiconductor film, and extends outward from the periphery of the semiconductor film. The light-shielding second electrode film deposited on the other main surface of the substrate extends from the periphery of the light-shielding first electrode film coated with the insulating film to the one main surface of the substrate. Featured photosensitive device. （２）上記感光ダイオード素子の半導体膜の回路ダイオ
ード素子側周縁から回路ダイオード素子の上記第２電極
膜が基板の一主面に延在する半導体膜の周縁までの距離
は基板の厚みに比して小さいことを特徴とした実用新案
登録請求の範囲第１項記載の感光装置。(2) The distance from the periphery of the semiconductor film of the photosensitive diode element on the circuit diode element side to the periphery of the semiconductor film where the second electrode film of the circuit diode element extends over one principal surface of the substrate is relative to the thickness of the substrate. The photosensitive device according to claim 1, which is characterized by being small in size.
JP3834684U 1984-03-16 1984-03-16 photosensitive device Pending JPS60151151U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3834684U JPS60151151U (en) 1984-03-16 1984-03-16 photosensitive device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3834684U JPS60151151U (en) 1984-03-16 1984-03-16 photosensitive device

Publications (1)

Publication Number Publication Date
JPS60151151U true JPS60151151U (en) 1985-10-07

Family

ID=30545266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3834684U Pending JPS60151151U (en) 1984-03-16 1984-03-16 photosensitive device

Country Status (1)

Country Link
JP (1) JPS60151151U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010153915A (en) * 2006-05-30 2010-07-08 Semiconductor Energy Lab Co Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010153915A (en) * 2006-05-30 2010-07-08 Semiconductor Energy Lab Co Ltd Semiconductor device

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