JPS5897851U - solid-state image sensor - Google Patents
solid-state image sensorInfo
- Publication number
- JPS5897851U JPS5897851U JP1981192604U JP19260481U JPS5897851U JP S5897851 U JPS5897851 U JP S5897851U JP 1981192604 U JP1981192604 U JP 1981192604U JP 19260481 U JP19260481 U JP 19260481U JP S5897851 U JPS5897851 U JP S5897851U
- Authority
- JP
- Japan
- Prior art keywords
- solid
- picture element
- image sensor
- state image
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 claims 2
- 239000011147 inorganic material Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の二階建固体撮像素子の構造を示す図、第
２図、第３図および第５図は本考案の二階建固体撮像素
子の構造を示す図、また、第４図は本考案の二階建固体
撮像素子の製作工程を示す図である。
１・・・半導体基板、２・・・スイッチ用ＭＯＳトラン
゛ジスタ、３・・・ソース、４・・・ドレイン、５・
・・ゲート。
：［ニーら
赤 ）
−２−一５」FIG. 1 is a diagram showing the structure of a conventional two-story solid-state image sensor, FIGS. 2, 3, and 5 are diagrams showing the structure of the two-story solid-state image sensor of the present invention, and FIG. It is a figure showing the manufacturing process of the two-story solid-state image sensor of the invention. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... MOS transistor for switch, 3... Source, 4... Drain, 5...
··Gate. : [Neera Red)
-2-15”
Claims (1)
チ素子を介、して取出した光学像に相当する光電荷を転
送する走査素子を集積化した走査用半導体基板の上部に
、該光電荷を発生する光電変横用光導電性膜と透明状の
電極を積層した二階建構造の固体撮像素子において、該
絵素電極の間隙に相当する領域に無機あるいは有機材料
から成る絶縁性の層を該絵素電極の膜厚と同等もしくは
若干厚く設けることにより、平坦化された絵素電極アレ
ー面を得ることを特徴とする固体撮像素子。The photocharges are generated on the top of a scanning semiconductor substrate that integrates a switch element array connected to the picture element electrode and a scanning element that transfers the photocharges corresponding to the optical image taken out through the switch elements. In a solid-state imaging device with a two-story structure in which a horizontal photoconductive film and a transparent electrode are laminated, an insulating layer made of an inorganic or organic material is placed in the area corresponding to the gap between the picture element electrodes. A solid-state imaging device characterized in that a flattened picture element electrode array surface is obtained by providing a film that is equal to or slightly thicker than the element electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1981192604U JPS5897851U (en) | 1981-12-25 | 1981-12-25 | solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1981192604U JPS5897851U (en) | 1981-12-25 | 1981-12-25 | solid-state image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5897851U true JPS5897851U (en) | 1983-07-02 |
Family
ID=30106007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1981192604U Pending JPS5897851U (en) | 1981-12-25 | 1981-12-25 | solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5897851U (en) |
-
1981
- 1981-12-25 JP JP1981192604U patent/JPS5897851U/en active Pending
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