JPS5945941U - Shortcut barrier gate field effect transistor - Google Patents

Shortcut barrier gate field effect transistor

Info

Publication number
JPS5945941U
JPS5945941U JP14078582U JP14078582U JPS5945941U JP S5945941 U JPS5945941 U JP S5945941U JP 14078582 U JP14078582 U JP 14078582U JP 14078582 U JP14078582 U JP 14078582U JP S5945941 U JPS5945941 U JP S5945941U
Authority
JP
Japan
Prior art keywords
shortcut
field effect
effect transistor
gate field
barrier gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14078582U
Other languages
Japanese (ja)
Inventor
信 竹内
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP14078582U priority Critical patent/JPS5945941U/en
Publication of JPS5945941U publication Critical patent/JPS5945941U/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Non-Volatile Memory (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半絶縁性基板と、この半絶縁性基板上に設けられたn形
半導体層と、このn形半導体層表面上に設けられた、ゲ
ート電極、ソース電極およびドレイン電極と、前記ゲー
ト電極とソース電極間、及びゲート電極とドレイン電極
間の前記n形半導体層の表面上に設けられたn−形半導
体層とからなることを特徴とするショットキバリアゲー
ト電界効果トランジスタ。
a semi-insulating substrate; an n-type semiconductor layer provided on the semi-insulating substrate; a gate electrode, a source electrode, and a drain electrode provided on the surface of the n-type semiconductor layer; and the gate electrode and the source electrode. and an n-type semiconductor layer provided on the surface of the n-type semiconductor layer between the gate electrode and the drain electrode.
JP14078582U 1982-09-17 1982-09-17 Shortcut barrier gate field effect transistor Pending JPS5945941U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14078582U JPS5945941U (en) 1982-09-17 1982-09-17 Shortcut barrier gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14078582U JPS5945941U (en) 1982-09-17 1982-09-17 Shortcut barrier gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS5945941U true JPS5945941U (en) 1984-03-27

Family

ID=30315085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14078582U Pending JPS5945941U (en) 1982-09-17 1982-09-17 Shortcut barrier gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS5945941U (en)

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