GB1332060A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
GB1332060A
GB1332060A GB3985871A GB3985871A GB1332060A GB 1332060 A GB1332060 A GB 1332060A GB 3985871 A GB3985871 A GB 3985871A GB 3985871 A GB3985871 A GB 3985871A GB 1332060 A GB1332060 A GB 1332060A
Authority
GB
United Kingdom
Prior art keywords
transistors
schottky
bulk
carried out
intrinsic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3985871A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1332060A publication Critical patent/GB1332060A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

1332060 Schottky-gate transistors INTERNATIONAL BUSINESS MACHINES CORP 25 Aug 1971 [2 Sept 1970] 39858/71 Heading H1K An FET has a Schottky gate making contact to an intrinsically conductive channel region extending between source and drain regions of high conductivity and bearing ohmic contacts. In the embodiment shown the shape is produced by a high temperature etching step carried out through and to undercut an apertured oxide film. Etching is carried out in a hydrogen or argon atmosphere in the presence of a vapour phase dopant such as phosphorus or arsenic, so that n-type region 46, 47 are formed. The electrodes 43, 44, 45 are applied after the oxide has been removed. In another embodiment the three electrodes lie on the plane surface of a semi-conductor body. In the two embodiments the bulk of the body is of intrinsic conductivity type. The intrinsic bulk may provide isolation for similar transistors, complementary field-effect transistors or Schottky diodes which may be formed in the same body. Junction transistors may also be formed in the same body by diffusion or implantation.
GB3985871A 1970-09-02 1971-08-25 Field effect transistor Expired GB1332060A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1309970A CH506188A (en) 1970-09-02 1970-09-02 Field effect transistor

Publications (1)

Publication Number Publication Date
GB1332060A true GB1332060A (en) 1973-10-03

Family

ID=4389292

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3985871A Expired GB1332060A (en) 1970-09-02 1971-08-25 Field effect transistor

Country Status (5)

Country Link
JP (1) JPS55913B1 (en)
CH (1) CH506188A (en)
DE (1) DE2134528B2 (en)
FR (1) FR2105175B1 (en)
GB (1) GB1332060A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114582835A (en) * 2022-05-05 2022-06-03 长鑫存储技术有限公司 Anti-fuse structure and manufacturing method thereof, anti-fuse array and storage device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH539360A (en) * 1971-09-30 1973-07-15 Ibm Semiconductor switching or memory device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE14941C (en) * M. MERKELBACH in Grenzhausen bei Coblenz Clay pots with transparent walls
NL235479A (en) * 1958-02-04 1900-01-01
NL300609A (en) * 1958-06-14 1967-06-26
US3150299A (en) * 1959-09-11 1964-09-22 Fairchild Camera Instr Co Semiconductor circuit complex having isolation means
US3344322A (en) * 1965-01-22 1967-09-26 Hughes Aircraft Co Metal-oxide-semiconductor field effect transistor
GB1172230A (en) * 1965-12-16 1969-11-26 Matsushita Electronics Corp A Method of Manufacturing Semiconductor Device
CH461646A (en) * 1967-04-18 1968-08-31 Ibm Field-effect transistor and process for its manufacture
CH476398A (en) * 1968-03-01 1969-07-31 Ibm Process for producing fine etched patterns
CH497792A (en) * 1968-06-28 1970-10-15 Ibm Method of manufacturing semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114582835A (en) * 2022-05-05 2022-06-03 长鑫存储技术有限公司 Anti-fuse structure and manufacturing method thereof, anti-fuse array and storage device
CN114582835B (en) * 2022-05-05 2022-07-29 长鑫存储技术有限公司 Anti-fuse structure and manufacturing method thereof, anti-fuse array and storage device

Also Published As

Publication number Publication date
FR2105175B1 (en) 1976-05-28
CH506188A (en) 1971-04-15
FR2105175A1 (en) 1972-04-28
DE2134528A1 (en) 1972-04-13
DE2134528B2 (en) 1979-04-19
JPS55913B1 (en) 1980-01-10

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee