GB1332060A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- GB1332060A GB1332060A GB3985871A GB3985871A GB1332060A GB 1332060 A GB1332060 A GB 1332060A GB 3985871 A GB3985871 A GB 3985871A GB 3985871 A GB3985871 A GB 3985871A GB 1332060 A GB1332060 A GB 1332060A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistors
- schottky
- bulk
- carried out
- intrinsic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 239000012300 argon atmosphere Substances 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
1332060 Schottky-gate transistors INTERNATIONAL BUSINESS MACHINES CORP 25 Aug 1971 [2 Sept 1970] 39858/71 Heading H1K An FET has a Schottky gate making contact to an intrinsically conductive channel region extending between source and drain regions of high conductivity and bearing ohmic contacts. In the embodiment shown the shape is produced by a high temperature etching step carried out through and to undercut an apertured oxide film. Etching is carried out in a hydrogen or argon atmosphere in the presence of a vapour phase dopant such as phosphorus or arsenic, so that n-type region 46, 47 are formed. The electrodes 43, 44, 45 are applied after the oxide has been removed. In another embodiment the three electrodes lie on the plane surface of a semi-conductor body. In the two embodiments the bulk of the body is of intrinsic conductivity type. The intrinsic bulk may provide isolation for similar transistors, complementary field-effect transistors or Schottky diodes which may be formed in the same body. Junction transistors may also be formed in the same body by diffusion or implantation.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1309970A CH506188A (en) | 1970-09-02 | 1970-09-02 | Field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1332060A true GB1332060A (en) | 1973-10-03 |
Family
ID=4389292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3985871A Expired GB1332060A (en) | 1970-09-02 | 1971-08-25 | Field effect transistor |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS55913B1 (en) |
CH (1) | CH506188A (en) |
DE (1) | DE2134528B2 (en) |
FR (1) | FR2105175B1 (en) |
GB (1) | GB1332060A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114582835A (en) * | 2022-05-05 | 2022-06-03 | 长鑫存储技术有限公司 | Anti-fuse structure and manufacturing method thereof, anti-fuse array and storage device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH539360A (en) * | 1971-09-30 | 1973-07-15 | Ibm | Semiconductor switching or memory device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE14941C (en) * | M. MERKELBACH in Grenzhausen bei Coblenz | Clay pots with transparent walls | ||
NL235479A (en) * | 1958-02-04 | 1900-01-01 | ||
NL300609A (en) * | 1958-06-14 | 1967-06-26 | ||
US3150299A (en) * | 1959-09-11 | 1964-09-22 | Fairchild Camera Instr Co | Semiconductor circuit complex having isolation means |
US3344322A (en) * | 1965-01-22 | 1967-09-26 | Hughes Aircraft Co | Metal-oxide-semiconductor field effect transistor |
GB1172230A (en) * | 1965-12-16 | 1969-11-26 | Matsushita Electronics Corp | A Method of Manufacturing Semiconductor Device |
CH461646A (en) * | 1967-04-18 | 1968-08-31 | Ibm | Field-effect transistor and process for its manufacture |
CH476398A (en) * | 1968-03-01 | 1969-07-31 | Ibm | Process for producing fine etched patterns |
CH497792A (en) * | 1968-06-28 | 1970-10-15 | Ibm | Method of manufacturing semiconductor devices |
-
1970
- 1970-09-02 CH CH1309970A patent/CH506188A/en not_active IP Right Cessation
-
1971
- 1971-07-06 FR FR7126003A patent/FR2105175B1/fr not_active Expired
- 1971-07-10 DE DE19712134528 patent/DE2134528B2/en not_active Ceased
- 1971-08-06 JP JP5910871A patent/JPS55913B1/ja active Pending
- 1971-08-25 GB GB3985871A patent/GB1332060A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114582835A (en) * | 2022-05-05 | 2022-06-03 | 长鑫存储技术有限公司 | Anti-fuse structure and manufacturing method thereof, anti-fuse array and storage device |
CN114582835B (en) * | 2022-05-05 | 2022-07-29 | 长鑫存储技术有限公司 | Anti-fuse structure and manufacturing method thereof, anti-fuse array and storage device |
Also Published As
Publication number | Publication date |
---|---|
FR2105175B1 (en) | 1976-05-28 |
CH506188A (en) | 1971-04-15 |
FR2105175A1 (en) | 1972-04-28 |
DE2134528A1 (en) | 1972-04-13 |
DE2134528B2 (en) | 1979-04-19 |
JPS55913B1 (en) | 1980-01-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |