JPS649684A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS649684A JPS649684A JP16575887A JP16575887A JPS649684A JP S649684 A JPS649684 A JP S649684A JP 16575887 A JP16575887 A JP 16575887A JP 16575887 A JP16575887 A JP 16575887A JP S649684 A JPS649684 A JP S649684A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- oeic
- laser
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To facilitate the microscopical formation of a pattern dimension and to obtain an OEIC of a planar structure suitable to contrive the improvement of a manufacturing yield by a method wherein a transverse current injection type semiconductor laser formed providing p-type and n-type impurity diffused layers at a prescribed interval and the integrated circuit of a field-effect transistor formed on a high resistance semiconductor layer are formed. CONSTITUTION:A transverse current injection type laser diode 16 is formed of p-type and n-type impurity diffused layers 8 and 7 and a laser active layer 4c held between these two layers. An optical confinement in a lateral direction is performed in this layer 4c through an ALzGa1-zAs layer 10a and an ALz'Ga1-z' As layer 10b. Si ions are implanted in a non-doped GaAs layer 6 to form an n-type FET active layer 9 of a field effect transistor 17 formed by performing a heat treatment. A source electrode 15, a drain electrode 13, a Schottky barrier gate electrode 14 are formed on this layer 9 and a GaAs MESFET is formed. In such a way, an OEIC comprising the semiconductor laser 16 and the FET 17, which are integrated on a flat substrate surface, can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16575887A JPS649684A (en) | 1987-07-02 | 1987-07-02 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16575887A JPS649684A (en) | 1987-07-02 | 1987-07-02 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS649684A true JPS649684A (en) | 1989-01-12 |
Family
ID=15818492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16575887A Pending JPS649684A (en) | 1987-07-02 | 1987-07-02 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS649684A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5311046A (en) * | 1990-11-19 | 1994-05-10 | Mitsubishi Denki Kabushiki Kaisha | Long wavelength transmitter opto-electronic integrated circuit |
-
1987
- 1987-07-02 JP JP16575887A patent/JPS649684A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5311046A (en) * | 1990-11-19 | 1994-05-10 | Mitsubishi Denki Kabushiki Kaisha | Long wavelength transmitter opto-electronic integrated circuit |
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