JPS54145485A - Gunn diode - Google Patents

Abstract

PURPOSE: To improve characteristics by simplifying the connection of an operation layer by growing a N-type operation layer of low density on a N-type semiconductor substrate of high carrier density and by providing several contact layers onto it with an insulator sandwiched between.

CONSTITUTION: On N-type semiconductor substrate 1 of high carrier density, N- type operation layer 2 of low carrier density is formed by epitaxial growth via buffer layer 6 of high carrier density. Onto it. several N-type semiconductor contact layers 3a to 3c isolated mutually by an insulator or high-resistivity semiconductor layer 5 are provided and then connected together by ohmic electrode 4 vapor-deposited on the entire substrate surface. Next, ohmic electrode 4 is also adhered to the entire reverse surface of substrate 1. Operation layer 2 is divided finely without forming the mesa structure, and a voltage is applied to electrodes 4 to flow a current in the vertical direction right under contact layers 3a to 3c, where Gunn oscillations are caused. Consequently, operation layer 2 can be divided finely and gunn characteristics improve remarkably.

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