JPS6486547A - Manufacture of semiconductor element - Google Patents

Abstract

PURPOSE:To decrease the number of processes, and to realize an element having excellent performance, stability and reliability by constructing an Si semiconductor element by using a pattern film being employed for selectively growing a single crystal SiC film and composed of a high melting-point material as a mask and a surface protective film as it is without being peeled. CONSTITUTION:A gate electrode 9, a source electrode 10 and a drain electrode 11 are formed onto an N-type single crystal SiC film 4, thus constructing an SiC Schottky gate type field-effect transistor. A window is bored to an SiO2 pattern film 2a, and an ohmic electrode 12 to a P-type Si layer 7 and an ohmic electrode 13 to an N-type Si layer 8 are shaped, thus constituting an Si P-N junction diode. Consequently, an SiC semiconductor element and an Si semiconductor element can be built to the same single crystal Si substrate 1. An SiO2 pattern film used for selectively growing the single crystal SiC film can be utilized as a mask for manufacturing the Si semiconductor element and a surface protective film in the Si semiconductor element after manufacture as it is.