JPS55141782A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS55141782A
JPS55141782A JP5009479A JP5009479A JPS55141782A JP S55141782 A JPS55141782 A JP S55141782A JP 5009479 A JP5009479 A JP 5009479A JP 5009479 A JP5009479 A JP 5009479A JP S55141782 A JPS55141782 A JP S55141782A
Authority
JP
Japan
Prior art keywords
layer
groove
doped
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5009479A
Other languages
Japanese (ja)
Inventor
Masaaki Ayabe
Masashi Dosen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP5009479A priority Critical patent/JPS55141782A/en
Publication of JPS55141782A publication Critical patent/JPS55141782A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To effectively concentrate an electric current to an active layer and improve the characteristics of a semiconductor laser by sequentially forming respective layers in a groove formed on a substrate, forming electrodes on the groove communicating with the uppermost high resistive layer and surrounding the active layer with the surface of the substrate in the groove. CONSTITUTION:A groove 2 having V shape in cross section is etched and formed on a plane (100) of an Si-doped n-type GaAs substrate 1. The Sn-doped n-type Ga0.7Al0.3As first layer 3, the Ge-doped p-type GaAs second layer 4, the Ge-doped p-type Ga0.7Al0.3As third layer 5 and Ge-doped p-type GaAs fourth layer 6 are sequentially grown in liquid phase epitaxially in the groove 2. Proton H<+> ion is implanted onto the entire surface of the substrate 1. The epitaxial layer isipartally converted into an insulator layer 8. The masks are matched on the groove 2, the surface portions of the layers 8 and 6 are etched to form a groove 9 having a width of approx. 3mu. Electrode material is coated on the entire surface to form an ohmic electrode 10 reaching the layer 6.
JP5009479A 1979-04-23 1979-04-23 Semiconductor laser Pending JPS55141782A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5009479A JPS55141782A (en) 1979-04-23 1979-04-23 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5009479A JPS55141782A (en) 1979-04-23 1979-04-23 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS55141782A true JPS55141782A (en) 1980-11-05

Family

ID=12849459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5009479A Pending JPS55141782A (en) 1979-04-23 1979-04-23 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS55141782A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0276285A (en) * 1988-09-12 1990-03-15 Nippon Telegr & Teleph Corp <Ntt> Quantum well type semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0276285A (en) * 1988-09-12 1990-03-15 Nippon Telegr & Teleph Corp <Ntt> Quantum well type semiconductor laser

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