JPS55102284A - Magnetic reluctance element - Google Patents

Magnetic reluctance element

Info

Publication number
JPS55102284A
JPS55102284A JP950179A JP950179A JPS55102284A JP S55102284 A JPS55102284 A JP S55102284A JP 950179 A JP950179 A JP 950179A JP 950179 A JP950179 A JP 950179A JP S55102284 A JPS55102284 A JP S55102284A
Authority
JP
Japan
Prior art keywords
regions
region
magnetic reluctance
substrate
reluctance element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP950179A
Other languages
Japanese (ja)
Inventor
Tadatsugu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP950179A priority Critical patent/JPS55102284A/en
Publication of JPS55102284A publication Critical patent/JPS55102284A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain stable characteristics of a magnetic reluctance element by forming a plurality of stripe-like regions implanted with impurity ion having deep level in a semiconductor layer grown on a high specific resistance substrate and forming a low carrier recombination region among the regions.
CONSTITUTION: An n-type GaAs layer 8 becoming a current region is epitaxially grown on a semi-insulating or insulating GaAs substrate 7, and a plurality of stripe- like large recombination regions 9 implanted with impurity ion having deep level are formed at predetermined interval on the layer 8. Then, a plurality of lower carrier recombination regions 10 are formed among the intervals of the regions 9, and surrounded with a high specific resistance isolation region 11 reaching the substrate 7. Thereafter, ohmic electrodes 12, 13 are mounted on both ends of the region 10, and an SiO2 film 14 is coated on the surface except for the output portion. Thus, the magnetic reluctance element having preferable reproducibility, desired characteristics and large degree of freedom of design is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP950179A 1979-01-30 1979-01-30 Magnetic reluctance element Pending JPS55102284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP950179A JPS55102284A (en) 1979-01-30 1979-01-30 Magnetic reluctance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP950179A JPS55102284A (en) 1979-01-30 1979-01-30 Magnetic reluctance element

Publications (1)

Publication Number Publication Date
JPS55102284A true JPS55102284A (en) 1980-08-05

Family

ID=11721978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP950179A Pending JPS55102284A (en) 1979-01-30 1979-01-30 Magnetic reluctance element

Country Status (1)

Country Link
JP (1) JPS55102284A (en)

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