SU599659A1 - Method of obtaining semiconductor devices based on compositions of the a-111-b-v type - Google Patents

Description

the arc to the surface of the semi-conductive wire (1c wsK in the / 5- and l-parts of the transition and localize them in the areas of the p- / r-junction, located at the IB semi-semiconductor depth, is practically eliminated; P01 The breakdown voltage of the pn junction is raised.

j The electrically insulated floor isolates the internal p-junction and increases its stability when the external conditions change.

In contrast to the local security services, the creation of additional security metallized rings is not required here, which simplifies the topography of the instruments. In the manufacture of semiconductor

; devices with small sizes of floating rL-junctions (less than 5-I of them. electrical characteristics improve.,.

The spruce lines form a continuous r-hp solid from the beginning on the surface of the semiconducting; on the way

Diffusion of impurity B structure

In this case, it is essential: the curvature of the p-j-transition decreases and the exit angle of the p-j-transition on the top surface decreases. In connection with this increases

voltage.

The decrease in the curvature of the p – n junction and the angle of its exit to the surface is caused by the features of impurity diffusion in such a structure. The diffusion coefficient of the impurity increases sharply with increasing sch irin bandgap in the semispherical solid solution. The built-in electric field directed towards the surface also reduces the diffusion of the impurity into the semiconductor structure. In this connection, a significant tangential component of diffusion arises, directed along the surface, and this leads to a decrease in the curvature and angle of the p-junction to the surface.

The liquid epitaxy from the volume of the solution limited by the two substrates, the A1-Ga-As melt, is grown on the iodo-deposit: GaAs keg by an epitaxial layer of Al.Gai.vAs solid solution. With a gap between the substrates of 1 mm, the gradient of change in the width of the crossed zone is 10 V / cm. Further increase the epitaxial layer of the l-type GaAs, with a thickness of 0.4-0.5 mm. The GaAs substrate is dissolved in Ga at 900 ° C. Epixed layer

l-GaAs with a layer of solid growth (the thief L-A1 j-Gai- -As, whose composition changes dramatically near the surface of the structure, is used to make a planar p-l junction. Diffusion of zinc is carried out using, thin layer

SiO2 (thickness of the layer Zyug 1000 A, thickness of the mask SisN 2000 A.

The drawing shows a diagram of the resulting planar p-l-relay.

GxoMa contains 1-l-GaAs; 2 - solid solution .-. R As with W increasing to the surface from O to 0.35, ohmic contacts 3 K. p-11 l-region and p-j junction, p-region 4.

Here, EC, EG, EY- are, respectively, the energies of the bottom of the conduction band, the Fermi level, and the valence band ceiling.

The built-in electric field formed by naMeHeHnH of the width of the subscreen zone in the layer of solid solution. with X increasing to the surface, the minority carriers are driven deep into the semiconductor both in the p- and in the l-region of the p-j junction. This leads to an understanding of leakage currents over the surface and to an increase in the reverse breakdown voltage.

The resulting p-l structures have a breakdown voltage above 400 S and a low leakage current. The electrical characteristics of the transition do not change with time and are practically independent of the external conditions: the composition of the gaseous medium, the humidity.

Claims (2)

1. US patent 3860460, cl. 148-176, H 01 L, 7/44, olub. 1975. 2.G. M. Zi Physics of semiconductor devices, “Epergne, M., 1973, p. 444-448.