JPS5658256A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5658256A JPS5658256A JP13499279A JP13499279A JPS5658256A JP S5658256 A JPS5658256 A JP S5658256A JP 13499279 A JP13499279 A JP 13499279A JP 13499279 A JP13499279 A JP 13499279A JP S5658256 A JPS5658256 A JP S5658256A
- Authority
- JP
- Japan
- Prior art keywords
- resistance sections
- type
- region
- islands
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000009966 trimming Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Adjustable Resistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To eliminate the effect of light on the environment by trimming a plurality of thin film resistance sections with a laser beam with reflectors made up of a metal film erected separately between the resistance sections and between bipolar transistors after they are formed on a semiconductor substrate. CONSTITUTION:An N type layer 28 serving as a collector is epitaxially grown on a P type Si substrate 27 and isolated into islands with a P<+> type isolated region 29. A P type base region 30 is diffused into one of islands thus formed so as to constitute a bipolar transistor and an N type emitter region 31 is provided therein. A collector contact region 32 is diffused adjacent to the region 30 and electrodes 33 are mounted on the respective regions. A plurality of thin film resistance sections 21 made up of a single crystal Si, Ni or the like are arranged parallel to each other on the other island of the layer 28 and then, covered with an SiO2 film 34. Prior to it, reflectors 26 made of Al, Mo or the like are erected separately between the resistance sections 21 and between the transistors. This prevents effect on other part when any one of the resistance sections are trimmed by a laser beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13499279A JPS5658256A (en) | 1979-10-18 | 1979-10-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13499279A JPS5658256A (en) | 1979-10-18 | 1979-10-18 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5658256A true JPS5658256A (en) | 1981-05-21 |
| JPS6245701B2 JPS6245701B2 (en) | 1987-09-28 |
Family
ID=15141399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13499279A Granted JPS5658256A (en) | 1979-10-18 | 1979-10-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5658256A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7425753B2 (en) | 2004-09-30 | 2008-09-16 | Ricoh Company, Ltd. | Semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02126474A (en) * | 1988-11-04 | 1990-05-15 | Nec Corp | Digital data recording and reproducing device |
-
1979
- 1979-10-18 JP JP13499279A patent/JPS5658256A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7425753B2 (en) | 2004-09-30 | 2008-09-16 | Ricoh Company, Ltd. | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6245701B2 (en) | 1987-09-28 |
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