JPS57148370A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57148370A
JPS57148370A JP3443681A JP3443681A JPS57148370A JP S57148370 A JPS57148370 A JP S57148370A JP 3443681 A JP3443681 A JP 3443681A JP 3443681 A JP3443681 A JP 3443681A JP S57148370 A JPS57148370 A JP S57148370A
Authority
JP
Japan
Prior art keywords
vapor
collector
type impurities
region
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3443681A
Other languages
Japanese (ja)
Inventor
Katsu Sanada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3443681A priority Critical patent/JPS57148370A/en
Publication of JPS57148370A publication Critical patent/JPS57148370A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To sharply reduce the process of manufacture for the subject semiconductor device by a method wherein an element is formed using a one conductive type semiconductor substrate which was formed without performing a vapor-phase growing method, and a semiconductor thin film formed on the above-mentioned substrate by performing vapor-phase growing. CONSTITUTION:An insulating film 25, whereon an aperture section 32 was selectively formed, is covered on the P type semiconductor 21 with a collector region 22 whereon N type impurities were diffused, a semiconductor thin film is selectively provided by vapor-phase growth containing P type impurities in such a manner that the aperture section 32 will be covered, and a base region 26 is formed. An emitter region 27 is formed on the aperture section 32 of the region 26 by diffusing N type impurities, and a collector electrode 29, an emitter electrode 30 and a base electrode 31 are arranged through the intermediary of an insulating film 28 which was selectively formed. Accordingly, the desired purpose can be attained by performing only one vapor-phase growing process maintaining the same collector junction capacitance. Also, a collector contact layer may not be provided in order to reduce parasitic collector resistance. Besides, the process of manufacture can be reduced to dispense with the diffusion of P type impurities into the semiconductor thin film.
JP3443681A 1981-03-10 1981-03-10 Semiconductor device Pending JPS57148370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3443681A JPS57148370A (en) 1981-03-10 1981-03-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3443681A JPS57148370A (en) 1981-03-10 1981-03-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57148370A true JPS57148370A (en) 1982-09-13

Family

ID=12414169

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3443681A Pending JPS57148370A (en) 1981-03-10 1981-03-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57148370A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63239982A (en) * 1987-03-27 1988-10-05 Fujitsu Ltd Manufacture of bipolar semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933434A (en) * 1972-07-20 1974-03-27
JPS5011676A (en) * 1973-06-01 1975-02-06
JPS5132074A (en) * 1974-09-11 1976-03-18 Tetsutaro Mori Senkohodenkan no tentokairo
JPS5140790A (en) * 1974-10-04 1976-04-05 Oki Electric Ind Co Ltd
JPS51111071A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor equipment
JPS561556A (en) * 1979-06-18 1981-01-09 Hitachi Ltd Semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933434A (en) * 1972-07-20 1974-03-27
JPS5011676A (en) * 1973-06-01 1975-02-06
JPS5132074A (en) * 1974-09-11 1976-03-18 Tetsutaro Mori Senkohodenkan no tentokairo
JPS5140790A (en) * 1974-10-04 1976-04-05 Oki Electric Ind Co Ltd
JPS51111071A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor equipment
JPS561556A (en) * 1979-06-18 1981-01-09 Hitachi Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63239982A (en) * 1987-03-27 1988-10-05 Fujitsu Ltd Manufacture of bipolar semiconductor device

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