JPS5683086A - Luminous semiconductor device and its manufacture - Google Patents

Luminous semiconductor device and its manufacture

Info

Publication number
JPS5683086A
JPS5683086A JP16114479A JP16114479A JPS5683086A JP S5683086 A JPS5683086 A JP S5683086A JP 16114479 A JP16114479 A JP 16114479A JP 16114479 A JP16114479 A JP 16114479A JP S5683086 A JPS5683086 A JP S5683086A
Authority
JP
Japan
Prior art keywords
band
epitaxial layer
type epitaxial
group element
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16114479A
Other languages
Japanese (ja)
Inventor
Susumu Furuike
Toshio Matsuda
Hitoo Iwasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP16114479A priority Critical patent/JPS5683086A/en
Publication of JPS5683086A publication Critical patent/JPS5683086A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To decrease the reabsorption of unnecessary light in a crystal by a method wherein the band tailing of a luminous region is strengthened while the band tailing of other regions is formed in inhibited structure. CONSTITUTION:A P type epitaxial layer, which contains at least a IV group element and forms a P-N junction, and an N type epitaxial layer are made up on a III-V group compound semiconductor substrate in the periodic table. A IV group element is doped near the P-N junction at high concentration, and the P type epitaxial layer section of which a degree of the deformation of an energy band by link among an impurity level by the IV group element and both a transmission band and a filled band is stronger than other sections is built up.
JP16114479A 1979-12-11 1979-12-11 Luminous semiconductor device and its manufacture Pending JPS5683086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16114479A JPS5683086A (en) 1979-12-11 1979-12-11 Luminous semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16114479A JPS5683086A (en) 1979-12-11 1979-12-11 Luminous semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5683086A true JPS5683086A (en) 1981-07-07

Family

ID=15729421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16114479A Pending JPS5683086A (en) 1979-12-11 1979-12-11 Luminous semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5683086A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4925629A (en) * 1972-06-30 1974-03-07
JPS5185388A (en) * 1975-01-24 1976-07-26 Hitachi Ltd gaas sekigaihatsukodaioodo

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4925629A (en) * 1972-06-30 1974-03-07
JPS5185388A (en) * 1975-01-24 1976-07-26 Hitachi Ltd gaas sekigaihatsukodaioodo

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