JPS55162279A - Manufacture of silicon avalanche photodiode - Google Patents
Manufacture of silicon avalanche photodiodeInfo
- Publication number
- JPS55162279A JPS55162279A JP6964479A JP6964479A JPS55162279A JP S55162279 A JPS55162279 A JP S55162279A JP 6964479 A JP6964479 A JP 6964479A JP 6964479 A JP6964479 A JP 6964479A JP S55162279 A JPS55162279 A JP S55162279A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- poly
- diffusion
- oxidized film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain a perfect planar type avalanche diode by a method wherein diffusion is carried out through a poly-Si which is kept buried in a mesa groove, and an N<+>-layer is formed on the mesa slope. CONSTITUTION:A P-epitaxial layer is placed on an N<+>-type Si substrate to form a mesa groove with an oxidized film 4 as a mask, which is covered thick with a poly-Si 11. The surface is wrapped up to the oxidized film 4, and diffusion is carried out through poly-Si 11 to make an N<+>-layer 8 on the mesa groove slope. Diffusion speed of an impurity in poly-Si is remarkably faster than in a single crystal Si, therefore the layer 8 becomes thick uniformly, and a terminal 7 of PN-junction is protected under the oxidized film 4. Further in an O2 atmosphere, there is produced an SiO2 film separately on the layer 11, and a diffusion of other impurities is then prevented. Next, a window is provided on the oxidized film 4, a P<+>-layer 3 is formed on the P-layer 2, an electrode 6 and a reflection preventing film 13 are made, thus completing a P-type side incident device. A device good in reproducibility and high in reliability is obtainable in satisfactory yield according to this method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6964479A JPS55162279A (en) | 1979-06-01 | 1979-06-01 | Manufacture of silicon avalanche photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6964479A JPS55162279A (en) | 1979-06-01 | 1979-06-01 | Manufacture of silicon avalanche photodiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55162279A true JPS55162279A (en) | 1980-12-17 |
Family
ID=13408754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6964479A Pending JPS55162279A (en) | 1979-06-01 | 1979-06-01 | Manufacture of silicon avalanche photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55162279A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112289882A (en) * | 2020-10-30 | 2021-01-29 | 无锡中微晶园电子有限公司 | Manufacturing method of avalanche photodiode |
-
1979
- 1979-06-01 JP JP6964479A patent/JPS55162279A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112289882A (en) * | 2020-10-30 | 2021-01-29 | 无锡中微晶园电子有限公司 | Manufacturing method of avalanche photodiode |
| CN112289882B (en) * | 2020-10-30 | 2024-06-11 | 无锡中微晶园电子有限公司 | Manufacturing method of avalanche photodiode |
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