JPS561575A - Impatt diode - Google Patents
Impatt diodeInfo
- Publication number
- JPS561575A JPS561575A JP7721079A JP7721079A JPS561575A JP S561575 A JPS561575 A JP S561575A JP 7721079 A JP7721079 A JP 7721079A JP 7721079 A JP7721079 A JP 7721079A JP S561575 A JPS561575 A JP S561575A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- electrode
- region
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- 238000007872 degassing Methods 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To provide an IMPATT diode adapted for microwave band and milliwave band by surrounding the junction end of a P-N junction forming the IMPATT diode with a porous SiO2 layer to prevent the variation and deterioration of the characteristics due to outer atmosphere. CONSTITUTION:A P-type layer 2, an N-type region 3 and an N<+>-type layer 4 are laminated and grown on a P<+>-type semiconductor substrate 1, and a P-type impurity is so diffused in the region except the operating pattern thereof as to reach the substrate 1. Then, porosity is formed at the diffused region from the side of this layer 4 with fluoric acid for degassing preliminarily it at approx. 400 deg.C, then heat treating it at 900-1,000 deg.C so as to surround the diffused region with porous SiO2 layer 5a. Thereafter, an upper surface electrode 6 is mounted on the uppermost layer 4 of the operating pattern while extending the electrode 6 over the layer 5a, and a lower surface electrode 7 is coated on the lower surface of the substrate 1. In this manner it is not affected by the outer atmosphere, the floating capacity between the electrode 6 and the layer 5a is reduced, and it can be used for 100GHz band.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7721079A JPS561575A (en) | 1979-06-19 | 1979-06-19 | Impatt diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7721079A JPS561575A (en) | 1979-06-19 | 1979-06-19 | Impatt diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS561575A true JPS561575A (en) | 1981-01-09 |
Family
ID=13627455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7721079A Pending JPS561575A (en) | 1979-06-19 | 1979-06-19 | Impatt diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS561575A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5276350A (en) * | 1991-02-07 | 1994-01-04 | National Semiconductor Corporation | Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits |
-
1979
- 1979-06-19 JP JP7721079A patent/JPS561575A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5276350A (en) * | 1991-02-07 | 1994-01-04 | National Semiconductor Corporation | Low reverse junction breakdown voltage zener diode for electrostatic discharge protection of integrated circuits |
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