JPS54146980A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS54146980A JPS54146980A JP5493478A JP5493478A JPS54146980A JP S54146980 A JPS54146980 A JP S54146980A JP 5493478 A JP5493478 A JP 5493478A JP 5493478 A JP5493478 A JP 5493478A JP S54146980 A JPS54146980 A JP S54146980A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mesa
- life
- type multi
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To make the life of carrier in the wafer surface uniform by dividing a cathode emitter layer after all diffusion processes. CONSTITUTION:PA layer 22 and PB layer 23 are formed from both faces of N-type Si substrate 21 by diffusion, and NE layer 24 is laminated on PB layer 23. Next, the NE layer 24 side is covered with a thermal oxide film, and Au, etc., are diffused from the PA layer 22 side up to the part near PB layer 23. After that, NE layer 24 is divided by photo etching to obtain a mesa-type multi-emitter structure. Continuously, a device is completed by electrode formation, protection film formation and packaging. Thus, a GTO device which has a uniform carrier life and the mesa-type multi-emitter structure can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5493478A JPS54146980A (en) | 1978-05-11 | 1978-05-11 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5493478A JPS54146980A (en) | 1978-05-11 | 1978-05-11 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54146980A true JPS54146980A (en) | 1979-11-16 |
Family
ID=12984452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5493478A Pending JPS54146980A (en) | 1978-05-11 | 1978-05-11 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54146980A (en) |
-
1978
- 1978-05-11 JP JP5493478A patent/JPS54146980A/en active Pending
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