JPS54105483A - Thyristor and its manufacture - Google Patents

Thyristor and its manufacture

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Publication number
JPS54105483A
JPS54105483A JP1283878A JP1283878A JPS54105483A JP S54105483 A JPS54105483 A JP S54105483A JP 1283878 A JP1283878 A JP 1283878A JP 1283878 A JP1283878 A JP 1283878A JP S54105483 A JPS54105483 A JP S54105483A
Authority
JP
Japan
Prior art keywords
layer
selectively
window
approximate
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1283878A
Other languages
Japanese (ja)
Inventor
Seiichi Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1283878A priority Critical patent/JPS54105483A/en
Publication of JPS54105483A publication Critical patent/JPS54105483A/en
Pending legal-status Critical Current

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  • Thyristors (AREA)

Abstract

PURPOSE: To increase the forward stopping voltage of a SCR with the curved surface part of a (pn) junction in a base layer, by shortening a separating diffusion time utilizing that the impurity diffusion in poly-Si is quicker than that in a single crystal.
CONSTITUTION: The oxidized film on Si substrate 1 of approximate 200μ in thickness is provided selectively with a window, and a groove of approximate 40μ in depth is made by etching. Then, the surface is covered selectively with oxidized film 6 and poly-Si 11 is stacked on both the surfaces filling the groove and then flattened by lapping. Next, B is selectively diffused to form separate layer 2 and p+-type emitter layer 3 and after an window is made selectively, low-density B diffusion is done to form p--type base layer 4. Through a high-temperature treatment in O2, B is elongation-diffused to link separate layers 2 together and, in consequence, layers 3 and 4 become approximate 60 and 35μ respectively. Next, the surface is provided selectively with a window and N-type emitter layer 5 is made in layer 4. In this constitution, the (pn) junction of p-type base 4 has no curvature and no electric-field convergence occurs, so that its di-electric strength will improve. In addition, since layer 2 is high in density, separate layers are formed through a short-time heat treatment.
COPYRIGHT: (C)1979,JPO&Japio
JP1283878A 1978-02-06 1978-02-06 Thyristor and its manufacture Pending JPS54105483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1283878A JPS54105483A (en) 1978-02-06 1978-02-06 Thyristor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1283878A JPS54105483A (en) 1978-02-06 1978-02-06 Thyristor and its manufacture

Publications (1)

Publication Number Publication Date
JPS54105483A true JPS54105483A (en) 1979-08-18

Family

ID=11816512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1283878A Pending JPS54105483A (en) 1978-02-06 1978-02-06 Thyristor and its manufacture

Country Status (1)

Country Link
JP (1) JPS54105483A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0782200A3 (en) * 1995-12-27 1997-11-05 Xerox Corporation A silicon controlled rectifier built in polysilicon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0782200A3 (en) * 1995-12-27 1997-11-05 Xerox Corporation A silicon controlled rectifier built in polysilicon
EP0782200B1 (en) * 1995-12-27 2001-09-26 Xerox Corporation A silicon controlled rectifier built in polysilicon

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