JPS5465483A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5465483A
JPS5465483A JP13264477A JP13264477A JPS5465483A JP S5465483 A JPS5465483 A JP S5465483A JP 13264477 A JP13264477 A JP 13264477A JP 13264477 A JP13264477 A JP 13264477A JP S5465483 A JPS5465483 A JP S5465483A
Authority
JP
Japan
Prior art keywords
electrode
manufacture
insulator
constitution
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13264477A
Other languages
Japanese (ja)
Other versions
JPS5950232B2 (en
Inventor
Hiromi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13264477A priority Critical patent/JPS5950232B2/en
Publication of JPS5465483A publication Critical patent/JPS5465483A/en
Publication of JPS5950232B2 publication Critical patent/JPS5950232B2/en
Expired legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To ensure the quick manufacture of the diode featuring the uniform chracteristics suited for the mass production, in a reduced number of the manufacturing process.
CONSTITUTION: Central electrode 7 is made of MO which is jointed with Si at a high temperature and through the ohmic junction, and insulator 3 featuring high insulating performance is provided partially with adhesion to MO and si. Then N- type Si2 is formed through the epitaxial growth and in the decompression atmosphere by covering one end of the electrode and part of the insulator. Furthermore, P+-type Si5 is formed through the epitaxial growth and in decompression by covering layer 2 and 3. After this, external electrode 8 is formed to complete the manufacture of the semiconductor device. In this constitution, the element surface is covered inside and shielded by the electrode or Si, thus being highly resistant to the external contamination. Thus, a highly reliable element can be obtained with excellent electric characteristics and in the reduced processes.
COPYRIGHT: (C)1979,JPO&Japio
JP13264477A 1977-11-04 1977-11-04 Semiconductor device and its manufacturing method Expired JPS5950232B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13264477A JPS5950232B2 (en) 1977-11-04 1977-11-04 Semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13264477A JPS5950232B2 (en) 1977-11-04 1977-11-04 Semiconductor device and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS5465483A true JPS5465483A (en) 1979-05-26
JPS5950232B2 JPS5950232B2 (en) 1984-12-07

Family

ID=15086133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13264477A Expired JPS5950232B2 (en) 1977-11-04 1977-11-04 Semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS5950232B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015194590A1 (en) * 2014-06-18 2015-12-23 富士電機株式会社 Semiconductor device and semiconductor device manufacturing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957291U (en) * 1982-10-12 1984-04-14 スズキ株式会社 side car

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015194590A1 (en) * 2014-06-18 2015-12-23 富士電機株式会社 Semiconductor device and semiconductor device manufacturing method
CN105814693A (en) * 2014-06-18 2016-07-27 富士电机株式会社 Semiconductor device and semiconductor device manufacturing method
JPWO2015194590A1 (en) * 2014-06-18 2017-04-20 富士電機株式会社 Semiconductor device and manufacturing method of semiconductor device
US10050133B2 (en) 2014-06-18 2018-08-14 Fuji Electric Co., Ltd. Application of thin insulating film layer in semiconductor device and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS5950232B2 (en) 1984-12-07

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