JPS5465483A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPS5465483A JPS5465483A JP13264477A JP13264477A JPS5465483A JP S5465483 A JPS5465483 A JP S5465483A JP 13264477 A JP13264477 A JP 13264477A JP 13264477 A JP13264477 A JP 13264477A JP S5465483 A JPS5465483 A JP S5465483A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- manufacture
- insulator
- constitution
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To ensure the quick manufacture of the diode featuring the uniform chracteristics suited for the mass production, in a reduced number of the manufacturing process.
CONSTITUTION: Central electrode 7 is made of MO which is jointed with Si at a high temperature and through the ohmic junction, and insulator 3 featuring high insulating performance is provided partially with adhesion to MO and si. Then N- type Si2 is formed through the epitaxial growth and in the decompression atmosphere by covering one end of the electrode and part of the insulator. Furthermore, P+-type Si5 is formed through the epitaxial growth and in decompression by covering layer 2 and 3. After this, external electrode 8 is formed to complete the manufacture of the semiconductor device. In this constitution, the element surface is covered inside and shielded by the electrode or Si, thus being highly resistant to the external contamination. Thus, a highly reliable element can be obtained with excellent electric characteristics and in the reduced processes.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13264477A JPS5950232B2 (en) | 1977-11-04 | 1977-11-04 | Semiconductor device and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13264477A JPS5950232B2 (en) | 1977-11-04 | 1977-11-04 | Semiconductor device and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5465483A true JPS5465483A (en) | 1979-05-26 |
JPS5950232B2 JPS5950232B2 (en) | 1984-12-07 |
Family
ID=15086133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13264477A Expired JPS5950232B2 (en) | 1977-11-04 | 1977-11-04 | Semiconductor device and its manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5950232B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015194590A1 (en) * | 2014-06-18 | 2015-12-23 | 富士電機株式会社 | Semiconductor device and semiconductor device manufacturing method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5957291U (en) * | 1982-10-12 | 1984-04-14 | スズキ株式会社 | side car |
-
1977
- 1977-11-04 JP JP13264477A patent/JPS5950232B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015194590A1 (en) * | 2014-06-18 | 2015-12-23 | 富士電機株式会社 | Semiconductor device and semiconductor device manufacturing method |
CN105814693A (en) * | 2014-06-18 | 2016-07-27 | 富士电机株式会社 | Semiconductor device and semiconductor device manufacturing method |
JPWO2015194590A1 (en) * | 2014-06-18 | 2017-04-20 | 富士電機株式会社 | Semiconductor device and manufacturing method of semiconductor device |
US10050133B2 (en) | 2014-06-18 | 2018-08-14 | Fuji Electric Co., Ltd. | Application of thin insulating film layer in semiconductor device and method of manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5950232B2 (en) | 1984-12-07 |
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