JPS55123155A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55123155A
JPS55123155A JP2990179A JP2990179A JPS55123155A JP S55123155 A JPS55123155 A JP S55123155A JP 2990179 A JP2990179 A JP 2990179A JP 2990179 A JP2990179 A JP 2990179A JP S55123155 A JPS55123155 A JP S55123155A
Authority
JP
Japan
Prior art keywords
electrode
insulation film
electrodes
easy
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2990179A
Other languages
Japanese (ja)
Inventor
Yutaka Misawa
Komei Yatsuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2990179A priority Critical patent/JPS55123155A/en
Publication of JPS55123155A publication Critical patent/JPS55123155A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To make it easy to position the second electrode and an electrode terminal to be connected by a method wherein a pellet electrode is covered with an insulation film and the second electrode of a pattern easy for positioning is provided through an opening of the insulation film. CONSTITUTION:A pb-layer and an ne-layer form an exposure patterin of a comb line pn-junction in an ncpbne-constitution on the upper main surface. Therefore a base electrode 3a and an emitter electrode 4a have a comb line pattern. An exposed portion of the pn-junction is covered with an SiO2 film, an insulation film 6 is provided on electrodes and the second base and emitter electrodes 3b, 4b which are connected at an opening portion are formed in a simple pattern of semicircle or the like on the insulation film to make the following positioning easy. Lead terminals 11 and 12 are connected to electrodes 3b and 4b through an Al solder 9 with support by an insulation 10. A lead terminal 13 is connected to a collector electrode 2 likewise. Then, the end surface of a pellet is glass-sealed after chemical engraving for completion.
JP2990179A 1979-03-16 1979-03-16 Semiconductor device Pending JPS55123155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2990179A JPS55123155A (en) 1979-03-16 1979-03-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2990179A JPS55123155A (en) 1979-03-16 1979-03-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55123155A true JPS55123155A (en) 1980-09-22

Family

ID=12288873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2990179A Pending JPS55123155A (en) 1979-03-16 1979-03-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55123155A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5018002A (en) * 1989-07-03 1991-05-21 General Electric Company High current hermetic package including an internal foil and having a lead extending through the package lid and a packaged semiconductor chip
US5164813A (en) * 1988-06-24 1992-11-17 Unitrode Corporation New diode structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164813A (en) * 1988-06-24 1992-11-17 Unitrode Corporation New diode structure
US5018002A (en) * 1989-07-03 1991-05-21 General Electric Company High current hermetic package including an internal foil and having a lead extending through the package lid and a packaged semiconductor chip

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