JPS5724587A - Light-emitting device - Google Patents

Light-emitting device

Info

Publication number
JPS5724587A
JPS5724587A JP9953480A JP9953480A JPS5724587A JP S5724587 A JPS5724587 A JP S5724587A JP 9953480 A JP9953480 A JP 9953480A JP 9953480 A JP9953480 A JP 9953480A JP S5724587 A JPS5724587 A JP S5724587A
Authority
JP
Japan
Prior art keywords
layer
illumination
type
band gap
gap energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9953480A
Other languages
Japanese (ja)
Inventor
Takao Furuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9953480A priority Critical patent/JPS5724587A/en
Publication of JPS5724587A publication Critical patent/JPS5724587A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
    • H01S5/0605—Self doubling, e.g. lasing and frequency doubling by the same active medium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties

Abstract

PURPOSE:To enable the secondary higher harmonic illumination to be emitted, by making at least one layer of the active layers surrounding an active layers a semiconductor layer having a band gap energy corresponding to the wave length of a half of that of the active layer. CONSTITUTION:An N type InGaAsP active layer 2 and a P type InP layer 3 of about 1.3mum in band gap energy wave length are grown in order on an N type InP substrate 1. Next, SiO2 film of stripe shape is grown on the layer 3. An etching is carried out to the depth of InP substrate 1 by using the stripe films as a mask to make a mesa of stripe shape. Again an SiO2 film 5 is formed on an N type GaAsP buried layer 4 to form in order a P type electrode 6 and an N type electrode 7. The illumination of 1.3mum generated in the active layer 2 induces a higher harmonic illumination of 0.65mum owing to the nonlinear effect of the material. Thus, said illumination can be picked up to outside efficiently owing to the burried layer 4 having a band gap energy layer than said higher harmonic illumination.
JP9953480A 1980-07-21 1980-07-21 Light-emitting device Pending JPS5724587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9953480A JPS5724587A (en) 1980-07-21 1980-07-21 Light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9953480A JPS5724587A (en) 1980-07-21 1980-07-21 Light-emitting device

Publications (1)

Publication Number Publication Date
JPS5724587A true JPS5724587A (en) 1982-02-09

Family

ID=14249869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9953480A Pending JPS5724587A (en) 1980-07-21 1980-07-21 Light-emitting device

Country Status (1)

Country Link
JP (1) JPS5724587A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6284581A (en) * 1985-10-08 1987-04-18 Fujitsu Ltd Semiconductor light-emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6284581A (en) * 1985-10-08 1987-04-18 Fujitsu Ltd Semiconductor light-emitting device

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