JPS55121679A - Short channel v-mos-fet - Google Patents

Short channel v-mos-fet

Info

Publication number
JPS55121679A
JPS55121679A JP2823379A JP2823379A JPS55121679A JP S55121679 A JPS55121679 A JP S55121679A JP 2823379 A JP2823379 A JP 2823379A JP 2823379 A JP2823379 A JP 2823379A JP S55121679 A JPS55121679 A JP S55121679A
Authority
JP
Japan
Prior art keywords
substrate
short channel
specific resistance
fet
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2823379A
Other languages
Japanese (ja)
Other versions
JPS6152588B2 (en
Inventor
Yuki Shimada
Hideyoshi Sato
Tetsuo Ichikawa
Kenji Hideshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2823379A priority Critical patent/JPS55121679A/en
Publication of JPS55121679A publication Critical patent/JPS55121679A/en
Publication of JPS6152588B2 publication Critical patent/JPS6152588B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To reduce the operating resistance of a short channel V-MOS-FET without increasing the area of the chip by shortening the channel length without decreasing the punch through withstand voltage thereof. CONSTITUTION:A semiconductor region 8 having the same conducting type as an n<+>type low specific resistance layer substrate 1 and substantially equal specific resistance thereto is formed at the projected region disposed at the n<+>type low specific resistance layer substrate 1 side of the groove formed to reach the substrate 1 through the substrate 1 and a channel forming layer 2. When the projected height of the region 8 and the width thereof are set at suitable values, it can set the short channel length between the source and the drain without decreasing the punch through withstand voltage thereof.
JP2823379A 1979-03-13 1979-03-13 Short channel v-mos-fet Granted JPS55121679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2823379A JPS55121679A (en) 1979-03-13 1979-03-13 Short channel v-mos-fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2823379A JPS55121679A (en) 1979-03-13 1979-03-13 Short channel v-mos-fet

Publications (2)

Publication Number Publication Date
JPS55121679A true JPS55121679A (en) 1980-09-18
JPS6152588B2 JPS6152588B2 (en) 1986-11-13

Family

ID=12242869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2823379A Granted JPS55121679A (en) 1979-03-13 1979-03-13 Short channel v-mos-fet

Country Status (1)

Country Link
JP (1) JPS55121679A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60128864A (en) * 1983-12-15 1985-07-09 Seiko Epson Corp Voltage converter circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60128864A (en) * 1983-12-15 1985-07-09 Seiko Epson Corp Voltage converter circuit
JPH0532984B2 (en) * 1983-12-15 1993-05-18 Seiko Epson Corp

Also Published As

Publication number Publication date
JPS6152588B2 (en) 1986-11-13

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