JPS5519839A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5519839A JPS5519839A JP9241678A JP9241678A JPS5519839A JP S5519839 A JPS5519839 A JP S5519839A JP 9241678 A JP9241678 A JP 9241678A JP 9241678 A JP9241678 A JP 9241678A JP S5519839 A JPS5519839 A JP S5519839A
- Authority
- JP
- Japan
- Prior art keywords
- area
- base
- emitter
- sub
- right under
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To strengthen emitter-base surge resist amount by forming a sub-base area, with the same conductivity as the base area, in the base area right under an emitter area.
CONSTITUTION: On a base area 2 right under emitter area 3 is formed a sub-base area 7 of the same conductivity, and the avalanche breakdown is made to be the facial avalanche breakdown in a bulk area 8 where area 3 contacts area 7. Thus, element deterioration can be prevented by decreasing the current density per unit area at the time of emitter-base reverse bias or reverse serge bias. A transistor hardly contributes to the electrical characteristic right under a bonding pat area. By forming a sub-base area 7 on the corresponding this area, hFE decrease due to emitter-base reverse and the deterioration of low frequency noise can greatly be improved with no great pattern change and with the indentical electrical characteristic removing breakdown voltage between emitter and base.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9241678A JPS5519839A (en) | 1978-07-27 | 1978-07-27 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9241678A JPS5519839A (en) | 1978-07-27 | 1978-07-27 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5519839A true JPS5519839A (en) | 1980-02-12 |
Family
ID=14053804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9241678A Pending JPS5519839A (en) | 1978-07-27 | 1978-07-27 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5519839A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS633461A (en) * | 1986-06-24 | 1988-01-08 | Nec Corp | Semiconductor device |
-
1978
- 1978-07-27 JP JP9241678A patent/JPS5519839A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS633461A (en) * | 1986-06-24 | 1988-01-08 | Nec Corp | Semiconductor device |
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