JPS5519839A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5519839A
JPS5519839A JP9241678A JP9241678A JPS5519839A JP S5519839 A JPS5519839 A JP S5519839A JP 9241678 A JP9241678 A JP 9241678A JP 9241678 A JP9241678 A JP 9241678A JP S5519839 A JPS5519839 A JP S5519839A
Authority
JP
Japan
Prior art keywords
area
base
emitter
sub
right under
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9241678A
Other languages
Japanese (ja)
Inventor
Keiji Inoue
Hiromi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9241678A priority Critical patent/JPS5519839A/en
Publication of JPS5519839A publication Critical patent/JPS5519839A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To strengthen emitter-base surge resist amount by forming a sub-base area, with the same conductivity as the base area, in the base area right under an emitter area.
CONSTITUTION: On a base area 2 right under emitter area 3 is formed a sub-base area 7 of the same conductivity, and the avalanche breakdown is made to be the facial avalanche breakdown in a bulk area 8 where area 3 contacts area 7. Thus, element deterioration can be prevented by decreasing the current density per unit area at the time of emitter-base reverse bias or reverse serge bias. A transistor hardly contributes to the electrical characteristic right under a bonding pat area. By forming a sub-base area 7 on the corresponding this area, hFE decrease due to emitter-base reverse and the deterioration of low frequency noise can greatly be improved with no great pattern change and with the indentical electrical characteristic removing breakdown voltage between emitter and base.
COPYRIGHT: (C)1980,JPO&Japio
JP9241678A 1978-07-27 1978-07-27 Semiconductor device Pending JPS5519839A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9241678A JPS5519839A (en) 1978-07-27 1978-07-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9241678A JPS5519839A (en) 1978-07-27 1978-07-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5519839A true JPS5519839A (en) 1980-02-12

Family

ID=14053804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9241678A Pending JPS5519839A (en) 1978-07-27 1978-07-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5519839A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS633461A (en) * 1986-06-24 1988-01-08 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS633461A (en) * 1986-06-24 1988-01-08 Nec Corp Semiconductor device

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