JPS5598874A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5598874A JPS5598874A JP611779A JP611779A JPS5598874A JP S5598874 A JPS5598874 A JP S5598874A JP 611779 A JP611779 A JP 611779A JP 611779 A JP611779 A JP 611779A JP S5598874 A JPS5598874 A JP S5598874A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base
- transistor
- junction
- capacitive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To eliminate the installation of special variable capacitive element outside of an IC by enhancing the voltage dependability of junction capacity between the collector and the base of a transistor.
CONSTITUTION: A layer 12 having the same polarity as a low temperature epitaxial layer 3 and lower density than a base layer 6 is formed between the layer 3 and a intermediate layer 6 forming a base so that the density of the layer 12 is gradually lowered from the contact surface with the layer 6 toward the layer 3. According to this configuration in case of an npn-transistor, its base and collector junction becomes stepwise junction of p+n+n and the junction capacity largely depends upon the voltage. Accordingly, the transistor itsefl can be used as a variable capacitive element to thereby reduce the components to be used in external connection.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP611779A JPS5598874A (en) | 1979-01-24 | 1979-01-24 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP611779A JPS5598874A (en) | 1979-01-24 | 1979-01-24 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5598874A true JPS5598874A (en) | 1980-07-28 |
Family
ID=11629555
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP611779A Pending JPS5598874A (en) | 1979-01-24 | 1979-01-24 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5598874A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100780248B1 (en) | 2006-12-27 | 2007-11-27 | 동부일렉트로닉스 주식회사 | Diode and method for manufacturing thereof |
-
1979
- 1979-01-24 JP JP611779A patent/JPS5598874A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100780248B1 (en) | 2006-12-27 | 2007-11-27 | 동부일렉트로닉스 주식회사 | Diode and method for manufacturing thereof |
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