JPS5598874A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5598874A
JPS5598874A JP611779A JP611779A JPS5598874A JP S5598874 A JPS5598874 A JP S5598874A JP 611779 A JP611779 A JP 611779A JP 611779 A JP611779 A JP 611779A JP S5598874 A JPS5598874 A JP S5598874A
Authority
JP
Japan
Prior art keywords
layer
base
transistor
junction
capacitive element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP611779A
Other languages
Japanese (ja)
Inventor
Shoichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP611779A priority Critical patent/JPS5598874A/en
Publication of JPS5598874A publication Critical patent/JPS5598874A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To eliminate the installation of special variable capacitive element outside of an IC by enhancing the voltage dependability of junction capacity between the collector and the base of a transistor.
CONSTITUTION: A layer 12 having the same polarity as a low temperature epitaxial layer 3 and lower density than a base layer 6 is formed between the layer 3 and a intermediate layer 6 forming a base so that the density of the layer 12 is gradually lowered from the contact surface with the layer 6 toward the layer 3. According to this configuration in case of an npn-transistor, its base and collector junction becomes stepwise junction of p+n+n and the junction capacity largely depends upon the voltage. Accordingly, the transistor itsefl can be used as a variable capacitive element to thereby reduce the components to be used in external connection.
COPYRIGHT: (C)1980,JPO&Japio
JP611779A 1979-01-24 1979-01-24 Semiconductor device Pending JPS5598874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP611779A JPS5598874A (en) 1979-01-24 1979-01-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP611779A JPS5598874A (en) 1979-01-24 1979-01-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5598874A true JPS5598874A (en) 1980-07-28

Family

ID=11629555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP611779A Pending JPS5598874A (en) 1979-01-24 1979-01-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5598874A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100780248B1 (en) 2006-12-27 2007-11-27 동부일렉트로닉스 주식회사 Diode and method for manufacturing thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100780248B1 (en) 2006-12-27 2007-11-27 동부일렉트로닉스 주식회사 Diode and method for manufacturing thereof

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