JPS53101987A - Transistor incorporated into monolithic integrated circuit - Google Patents

Transistor incorporated into monolithic integrated circuit

Info

Publication number
JPS53101987A
JPS53101987A JP1745977A JP1745977A JPS53101987A JP S53101987 A JPS53101987 A JP S53101987A JP 1745977 A JP1745977 A JP 1745977A JP 1745977 A JP1745977 A JP 1745977A JP S53101987 A JPS53101987 A JP S53101987A
Authority
JP
Japan
Prior art keywords
integrated circuit
monolithic integrated
transistor incorporated
collector region
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1745977A
Other languages
Japanese (ja)
Inventor
Teruo Tabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP1745977A priority Critical patent/JPS53101987A/en
Publication of JPS53101987A publication Critical patent/JPS53101987A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To reduce the floating capacity between collector region and substrate and improve the frequency characteristics of the circuit by making isolation regions and collector lead-out region as well as the epitaxial layer existing between the collector region at higher potentials as compared to the substrate and collector region.
COPYRIGHT: (C)1978,JPO&Japio
JP1745977A 1977-02-16 1977-02-16 Transistor incorporated into monolithic integrated circuit Pending JPS53101987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1745977A JPS53101987A (en) 1977-02-16 1977-02-16 Transistor incorporated into monolithic integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1745977A JPS53101987A (en) 1977-02-16 1977-02-16 Transistor incorporated into monolithic integrated circuit

Publications (1)

Publication Number Publication Date
JPS53101987A true JPS53101987A (en) 1978-09-05

Family

ID=11944593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1745977A Pending JPS53101987A (en) 1977-02-16 1977-02-16 Transistor incorporated into monolithic integrated circuit

Country Status (1)

Country Link
JP (1) JPS53101987A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104156A (en) * 1985-10-29 1987-05-14 エツセ・ジ・エツセ・ミクロエレツトロニ−カ・エツセ・ピ・ア Electronic semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841675A (en) * 1971-09-28 1973-06-18
JPS49122988A (en) * 1973-03-27 1974-11-25

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841675A (en) * 1971-09-28 1973-06-18
JPS49122988A (en) * 1973-03-27 1974-11-25

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104156A (en) * 1985-10-29 1987-05-14 エツセ・ジ・エツセ・ミクロエレツトロニ−カ・エツセ・ピ・ア Electronic semiconductor device

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