JPS6149465A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS6149465A JPS6149465A JP59171888A JP17188884A JPS6149465A JP S6149465 A JPS6149465 A JP S6149465A JP 59171888 A JP59171888 A JP 59171888A JP 17188884 A JP17188884 A JP 17188884A JP S6149465 A JPS6149465 A JP S6149465A
- Authority
- JP
- Japan
- Prior art keywords
- light
- sensitivity
- solid
- type
- smear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000003384 imaging method Methods 0.000 claims description 9
- 239000003870 refractory metal Substances 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は単板カラー固体カメラに用いることができる固
体撮像装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a solid-state imaging device that can be used in a single-plate color solid-state camera.
従来例の構成とその問題点
近年、固体撮像装置はＭＯＳ型、ＣＰＤ型あるいは、Ｃ
ＣＤ型などが商品化されている。Conventional configurations and their problems In recent years, solid-state imaging devices have become MOS type, CPD type, or CPD type.
CD type and other types have been commercialized.
その内でＣＣＤ型はインターラインＣ０Ｄ（以下ＩＬ−
ＣＯＤと呼ぶ）型が主流と々っている。Among them, the CCD type is interline C0D (hereinafter referred to as IL-
The most common type is COD (called COD).
この方式は、高感度であるという特徴を有しているが、
特性面では感度を低下させないでさらにスミアの低減を
図ることが要望されている。This method is characterized by high sensitivity, but
In terms of characteristics, it is desired to further reduce smear without reducing sensitivity.
以下、図面を参照しながら、上述したような従来のＩＬ
−ＣＯＤについて説明する。Hereinafter, with reference to the drawings, the conventional IL system as described above will be described.
-Explain COD.
第１図は従来のＩ Ｌ−ＣＯＤの１単位画素の断面模式
図を示すものである。第１図において、１は出発材料の
Ｎ型Ｓ基板である。２はＰ型ウェルで、能動領域となる
。３はチャンネルストッパーのＰ型頭域、４はＣＣＤの
Ｎ型埋め込み拡散層である。５はＣＯＤの転送電極とな
るポリシリコンゲートである。６は受光部となるＰＮ接
合のＮ型拡散層、７ばＣＣＤ上の光遮蔽用のアルミニウ
ム膜である。８は保護絶縁膜である。FIG. 1 shows a schematic cross-sectional view of one unit pixel of a conventional IL-COD. In FIG. 1, numeral 1 indicates an N-type S substrate as a starting material. 2 is a P-type well, which becomes an active region. 3 is a P-type head area of a channel stopper, and 4 is an N-type buried diffusion layer of a CCD. 5 is a polysilicon gate serving as a COD transfer electrode. Reference numeral 6 designates an N-type diffusion layer of a PN junction serving as a light receiving portion, and 7 designates an aluminum film for shielding light on the CCD. 8 is a protective insulating film.
以上のように構成されたＩＬ−ＣＯＤについて、以下そ
の動作を説明する。The operation of the IL-COD configured as described above will be described below.
まずＮ型Ｓ１基板１とＰ型ウェル２とは逆バイアスされ
ている。そしである電圧以上を加えると受光部のＮ型拡
散層６の下のＰ型ウェル２ｂは、ＣＣＤの下のＰ型ウェ
ル２ａに比べて濃度は薄く拡散長も短いので、完全空乏
化する。そのため入射光のうちでＰ型ウェル２のポテン
′シャルの山よシ深い所で発生した電荷は基板１へ吸収
される。First, the N type S1 substrate 1 and the P type well 2 are reverse biased. Then, when a voltage higher than a certain voltage is applied, the P-type well 2b under the N-type diffusion layer 6 of the light-receiving section becomes completely depleted because the concentration is lower and the diffusion length is shorter than that of the P-type well 2a under the CCD. Therefore, charges generated in the incident light at a depth deeper than the peak of the potential of the P-type well 2 are absorbed into the substrate 1.
そのため、この様なＰ型ウェル構造でないものに比べる
とスミアの低減が図られている。しかしながら上記のよ
うな構造では、光電変換面のＮ型拡散層６と遮光のため
のアルミニウム膜７との間が最少でも１μｍ以上あるた
め斜め入射光などによるスミアが支配的となっている。Therefore, smear is reduced compared to those without such a P-type well structure. However, in the above structure, since the distance between the N-type diffusion layer 6 on the photoelectric conversion surface and the light-shielding aluminum film 7 is at least 1 μm or more, smear caused by obliquely incident light is dominant.
それを解決するには、アルミニウム膜による遮光を大き
くすればよいが、そうすると感度の低下をまねくという
欠点を有していた。In order to solve this problem, it is possible to increase the light shielding by the aluminum film, but this has the drawback of causing a decrease in sensitivity.
発明の目的
本発明は上記欠点に鑑み、感度低下を抑えてスミアの低
減を図ることのできる固体撮像装置を提供するものであ
る。OBJECTS OF THE INVENTION In view of the above-mentioned drawbacks, the present invention provides a solid-state imaging device capable of suppressing a decrease in sensitivity and reducing smear.
発明の構成
この目的を達成するために本発明の固体撮像装置は、ゲ
ート電極を高融点金属、あるいは高融点金属ポリサイド
およびシリサイドで形成したものであり、この構成によ
って、感度低下をまねくことなく、スミア低減が図れる
こととなる。Structure of the Invention To achieve this object, the solid-state imaging device of the present invention has a gate electrode formed of a high-melting point metal, or a high-melting point metal polycide or silicide. Smear reduction can be achieved.
実施例の説明
以下、本発明の一実施例について、図面を参照しながら
説明する。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
第２図は本発明の実施例におけるＩ Ｌ−ＣＯＤの１単
位画素の断面模式図を示すものである。FIG. 2 shows a schematic cross-sectional view of one unit pixel of IL-COD in an embodiment of the present invention.
第２図において２１はＮ型Ｓｉ基板、２２はＰ型ウェル
、２３はチャンネルストッパ領域、２４はＣＣＤのＮ型
埋め込み拡散層、２５は高融点金属によるゲート電極、
２６は受光部となるＰＮ接合の炉型拡散層、２７は保護
絶縁膜である。In FIG. 2, 21 is an N-type Si substrate, 22 is a P-type well, 23 is a channel stopper region, 24 is an N-type buried diffusion layer of the CCD, 25 is a gate electrode made of a refractory metal,
Reference numeral 26 represents a PN junction furnace-type diffusion layer serving as a light receiving portion, and reference numeral 27 represents a protective insulating film.
以上のように構成された固体撮像装置について以下その
動作を説明する。まず基板深部でのスミア抑制動作は、
従来例と同一である。ところが、ＣＯＤのゲート電極２
５が光を透過しない高融点金属（たとえばＭｏ等）で形
成されているため、ゲート電極２５自体が光を遮蔽する
ので、従来例のようなアルミニウム膜による遮光を必要
としない。その結果受光部と遮光部との間がゲート酸化
膜厚分のみとなり従来の１μｍ以上からそのに以下の距
離となる。そのため、たとえば４５°で入射角が入射し
てくる光に対しては本発明と同等のスミア値にするため
には従来例の構造では遮光のためのアルミニウム膜を１
μｍ程度広げなければならない。その結果、感度および
開口率の低下をまねくことになる。また、本発明の構造
は受光部と遮光部をセルファラインで形成でき、なお、
ゲート材料にシート抵抗の低い高融点金属あるいはそれ
のシリサイドまたはポリサイドを使用するため、固体撮
像装置の小型化、高密度化にも十分対応できる。さらに
本発明の実施例（第２図）から明らかなように、従来例
と比較して平坦である。The operation of the solid-state imaging device configured as described above will be described below. First, the smear suppression operation deep inside the board is
This is the same as the conventional example. However, the gate electrode 2 of COD
Since gate electrode 25 is made of a high melting point metal (such as Mo) that does not transmit light, the gate electrode 25 itself blocks light, so there is no need for light blocking by an aluminum film as in the conventional example. As a result, the distance between the light receiving part and the light shielding part becomes only the thickness of the gate oxide film, and the distance becomes less than 1 μm from the conventional 1 μm or more. Therefore, for example, in order to obtain the same smear value as the present invention for light incident at an incident angle of 45°, the conventional structure requires only one aluminum film for light shielding.
It must be expanded by about μm. As a result, sensitivity and aperture ratio decrease. In addition, the structure of the present invention allows the light receiving part and the light shielding part to be formed by self-line, and furthermore,
Since a high-melting point metal with low sheet resistance or its silicide or polycide is used as the gate material, it is fully compatible with miniaturization and higher density of solid-state imaging devices. Furthermore, as is clear from the embodiment of the present invention (FIG. 2), it is flat compared to the conventional example.
そのため、オンチップフィルターの形成も非常に容易に
なる。Therefore, it becomes very easy to form an on-chip filter.
なお、一実施例ではＰウェル型ＩＬ−ＣＣＤ構造としだ
が、他のＩ Ｌ−ＣＣＤ構造であってもよい。Although a P-well type IL-CCD structure is used in one embodiment, other IL-CCD structures may be used.
発明の効果
以上のように本発明は、ゲート電極を高融点金属あるい
はそれのソリサイド等で形成することにより、感度の低
下を才ねかすにスミアの低減が図れるもので、その実用
的効果は犬なるものがある。Effects of the Invention As described above, in the present invention, by forming the gate electrode with a high melting point metal or its solicide, it is possible to reduce smear while reducing sensitivity, and its practical effects are outstanding. There is something.
第１図は固体撮像装置の従来例における１単位画素の断
面模式図、第２図は本発明の一実施例における固体撮像
装置の１単位画素の断面模式図である。
２１・・・・・・Ｎ ｆｊＪ Ｓ ｉ基板、２２・・・
・・・Ｐ型ウェル、２３・・・・・・チャンネノしスト
ッパー、２４・・・・・・ＣＣＤのＮ型埋め込み拡散層
、２５・・・・・・ゲート電極、２６・・・・・・Ｎ型
拡散層、２７・・・・・・保護絶縁膜。FIG. 1 is a schematic cross-sectional view of one unit pixel in a conventional solid-state imaging device, and FIG. 2 is a schematic cross-sectional diagram of one unit pixel in a solid-state imaging device according to an embodiment of the present invention. 21...N fjJ Si board, 22...
... P-type well, 23 ... Channel stopper, 24 ... N-type buried diffusion layer of CCD, 25 ... Gate electrode, 26 ... N-type diffusion layer, 27...protective insulating film.
Claims (1)
ドまたはそのシリサイドで形成されていることを特徴と
する固体撮像装置。A solid-state imaging device characterized in that a gate electrode is formed of a refractory metal, a polycide of a refractory metal, or a silicide thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59171888A JPS6149465A (en) | 1984-08-17 | 1984-08-17 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59171888A JPS6149465A (en) | 1984-08-17 | 1984-08-17 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6149465A true JPS6149465A (en) | 1986-03-11 |
Family
ID=15931657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59171888A Pending JPS6149465A (en) | 1984-08-17 | 1984-08-17 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6149465A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6315460A (en) * | 1986-07-07 | 1988-01-22 | Nec Corp | Solid-state image sensor |
| JPS6346763A (en) * | 1986-08-15 | 1988-02-27 | Nec Corp | Solid state image sensor and manufacture thereof |
| JPS63174228U (en) * | 1987-03-24 | 1988-11-11 | ||
| JPH0416638A (en) * | 1990-05-11 | 1992-01-21 | Kajima Corp | Wooden framework |
| FR2665983A1 (en) * | 1990-07-10 | 1992-02-21 | Gold Star Electronics | METHOD FOR PRODUCING A SELF-ALIGNING TYPE CCD IMAGE SENSOR. |
| US5126811A (en) * | 1990-01-29 | 1992-06-30 | Mitsubishi Denki Kabushiki Kaisha | Charge transfer device with electrode structure of high transfer efficiency |
| JP2005123538A (en) * | 2003-10-20 | 2005-05-12 | Sony Corp | Solid imaging device and its manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5724171A (en) * | 1980-07-18 | 1982-02-08 | Matsushita Electric Ind Co Ltd | Solid state image sensor |
| JPS5780768A (en) * | 1980-11-07 | 1982-05-20 | Fujitsu Ltd | Semiconductor device |
| JPS5928774A (en) * | 1982-08-10 | 1984-02-15 | Sanyo Electric Co Ltd | Solid-state image pickup element |
| JPS59159564A (en) * | 1983-03-02 | 1984-09-10 | Sony Corp | Solid-state photo-electric conversion device |
-
1984
- 1984-08-17 JP JP59171888A patent/JPS6149465A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5724171A (en) * | 1980-07-18 | 1982-02-08 | Matsushita Electric Ind Co Ltd | Solid state image sensor |
| JPS5780768A (en) * | 1980-11-07 | 1982-05-20 | Fujitsu Ltd | Semiconductor device |
| JPS5928774A (en) * | 1982-08-10 | 1984-02-15 | Sanyo Electric Co Ltd | Solid-state image pickup element |
| JPS59159564A (en) * | 1983-03-02 | 1984-09-10 | Sony Corp | Solid-state photo-electric conversion device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6315460A (en) * | 1986-07-07 | 1988-01-22 | Nec Corp | Solid-state image sensor |
| JPS6346763A (en) * | 1986-08-15 | 1988-02-27 | Nec Corp | Solid state image sensor and manufacture thereof |
| JPS63174228U (en) * | 1987-03-24 | 1988-11-11 | ||
| US5126811A (en) * | 1990-01-29 | 1992-06-30 | Mitsubishi Denki Kabushiki Kaisha | Charge transfer device with electrode structure of high transfer efficiency |
| JPH0416638A (en) * | 1990-05-11 | 1992-01-21 | Kajima Corp | Wooden framework |
| FR2665983A1 (en) * | 1990-07-10 | 1992-02-21 | Gold Star Electronics | METHOD FOR PRODUCING A SELF-ALIGNING TYPE CCD IMAGE SENSOR. |
| JP2005123538A (en) * | 2003-10-20 | 2005-05-12 | Sony Corp | Solid imaging device and its manufacturing method |
| JP4496753B2 (en) * | 2003-10-20 | 2010-07-07 | ソニー株式会社 | Solid-state imaging device and manufacturing method thereof |
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