JPS59159564A - Solid-state photo-electric conversion device - Google Patents

Abstract

PURPOSE:To prevent the penetration of an unnecessary incident light by forming a drive electrode with metal silicide. CONSTITUTION:Many photo receiving parts 11 composed as one picture element and a vertical and a horizontal register composed of CCD's are formed on a semiconductor substrate 12. For the CCD by two-phase drive a plurality of shift electrodes 14 consisting of the first and second electrode parts 14a and 14b electrically connected with the thicknesses of insulation layers 13 such as SiO2 different are adhered and formed on the substrate 12. Then, every other shift electrode 14 is connected in common and operated by two-phase clock pulse. These electrodes 14a and 14b are formed of metal silicide having photo shielding effect. Further the substrate 12 whereon the electrode 14 and the photo receiving electrode 11 are formed are coated with a photoconductor layer 15 made of antimony trisulfide or amorphous Si, etc. and with a transparent conductive film 16 made of Ind oxide, etc.

Description

DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a solid-state optical-to-electrical conversion device such as a CCD solid-state imaging device or a Δ10S type solid-state imaging device.

Background technology and its problems〉 A solid-state photoelectric conversion device uses carbon having a photoelectric conversion function.
CD (charge coupled device)
), solid-state imaging devices that use a MOS matrix, etc., and liquid crystal display devices that control reflected light using electrical signals are known, such as stacked CCDCD solid-state imaging devices (cutivum), IJ sock-type reflective liquid crystal display devices, etc. etc. have been proposed.

In general, solid-state photoelectric conversion devices of the type described above generally include a large number of light receiving sections or picture elements arranged in an IJ rack shape, and multiple layers of drive electrodes for driving each of these light receiving sections or picture elements. It is constructed by being formed on a semiconductor substrate such as.

By the way, in such a solid-state photoelectric conversion device, if incident light from the outside enters the semiconductor substrate other than the portion where the light-receiving portion or the picture element is formed, the normal operation of the device will be hindered. For example, when light enters the diffusion layer constituting a switch transistor and its surroundings, electron-hole pairs are generated, causing leakage current to flow through the transistor.

Conventionally, in order to prevent the above-mentioned external incident light from passing through the semiconductor substrate, methods such as shielding with metal such as aluminum or using a filter to block light of a specific wavelength have been used.・In many cases, there are areas where external light enters the substrate due to the surface or process. In particular, the above-mentioned tendency becomes remarkable because polysilicide (polycrystalline silicon), which is a material that easily transmits light, is used for the first layer of the first drive electrode.

Since the fLru@'M'i 102 is formed of bolin riboid, incident light from the outside passes through this electrode 102 and is formed on the substrate 103.] Diffusion layer 104
It will arrive in stock and have a negative impact. Therefore, the transparent conductor 11 facing the electrode 102 made of polysilicon
1105 Upper VC')'' Covering a light shielding material such as aluminum +4106 allows the above incident light to be emitted from K6.
, but the block f described by k forms the material 106.
rmei/(m) This equipment will increase the number of man-hours in the manufacturing plant, and the cattle production efficiency A・(- will be significantly lowered, as shown in the table (7).
G, the number of parts increases, which increases manufacturing costs.

The same is true not only for the above-mentioned Defect 11vi type CC-D solid image 4a, but also for other solid-state light-'tii: gas conversion devices.

The purpose of the invention is to solve the above-mentioned drawbacks of the conventional technology, and as a result of intensive research, a solid-state energy conversion device has been developed.
11. He completed the present invention by discovering that by applying metal silicide to the poles of the 11-axis motor, it was possible to prevent unnecessary incident temperature (°C) from entering the site.

This driving chamber is made of molybdenum silicide (MoSi,
, )- and kung spun silizide (～he'SL□)
, platinum silicide (Pt5i), titanium silicide (TiSi), tank) Ii'/reside (
'-1, "a S r ), etc. are honored fL/). Ita11, f-+4, ~, in the case of ligden silicon lead (ri, film thickness of 1000 people - 400-700.
7811's 11J Congratulations on the light of the pirates.) Dimension λ: 1 eyebrow width ratio is N, approximately 2φ, film thickness 3000λ or more and -i'-, 4
It has a very low light transmittance of approximately 0% in the visible light region, and has an excellent light shielding property. Similar characteristics for other metal silicides such as tungsten silicide are also described in 4-1.

In addition, ``Niki Methanoshi Shiriride is Bolinlili ~
A low resistance value (approximately 10 Ωα) can be obtained compared to the Id, and therefore, it is possible to obtain a solid-state electric transducer with a fast response by using the metal silicide of the Id for the Id. Become.

In addition, molybdenum series lead, etc. (7) 2 metal series 1
Nosa, Idotli acid 1 - and 1. Deru (shipll'divination)" [
1st person, I beg for Su LZ) - Ma-ma 11] υ・Suko, -Ninohe-Ishi] Iit Lord and -Natsu-C℃・)ru.

At this point, it may also be possible to laminate polysilicide with LD t JTJ l,). In this case, change the J id to 11 (((J)) to 4poIJ-nl. )) - The id film is corrugated 7, and processed and notched to form a
This construction
7 ts 1', carbon 11 oxygen [11 (・)] is used for plasma entrainment "11Z". Like (f 1.
1 squirrel j' city (, similar to meta, 7 resilitoid and bolin I key ID 2 i trout ni dai () 5. and size Z) especially.
'Even if it's a V section e) The incident light is roughly cut down -t, b and the force is jj]'
After forming metal silicone on ψ−, high temperature treatment is performed.
llλ0 is 1. If the metal silylide oMl released by 10 [1] becomes iiJ north. For example (J:5.-1=ij [::1 methanoton and 1 digit of molybdenum - 1:1 17>
Even when treated at high humidity (at a temperature of about 950°C), there was no peeling of the knobs. 71.
・71J Naido Ai) Hi) (Has metal series, 1 and polysiri →) - It's λIt bad book (・It goes up to form from this,) 1st Nuru l-"Effect 1.4 of my own ,v,7
j,' l,) drive' sleep drive is ζ1. ! 1-
Separate νko0tanu"fl (without setting -a, 4p soot -
'i: (shoot-)Y-kako□・(to・0 diagonal,-if 11 ÷ to 11 ÷ 4 anti(C potato 111 graduation), (is defense 1)
Kai-/C device (DI+mi usual jt"iH kki K・1 5.
13 Highly requested solid lid-'i)j @ A-conversion device;
”j (14k) 7.s C) (J'yii 3 dragons 7..

Furthermore, the metal silicide C) resistor 9'' and 111'1
D6K (1!: Solid with fast response speed because uha)' [4
-'l-1, now 21st color - Toso Nishi Q 7:'l''j To et al.

Hereinafter, specific examples of the present invention (・C) (d ”)
, 'l −, rru.

〈Example 1〉 First, the present invention was applied to a stacked CCI) solid-state imaging: Sae@tHK
; i'd will be explained according to the drawings.

As shown in FIGS. 2 and 3, a stacked type CCJ) solid-state imaging device includes a large number of light-receiving sections 11 arranged in a matrix, each of which is configured as one picture, and vertical lines between the light-receiving sections 11. a vertical shift register section consisting of a CCD arranged in a vertical direction and sequentially transferring accumulated carriers in the vertical direction; and a horizontal shift register section consisting of a CCD disposed in a direction perpendicular to each vertical shift register section and transferring accumulated carriers horizontally ( (not shown) is formed on a semiconductor substrate 12''2, and the minority carriers accumulated in each light receiving section 11 are transferred to the corresponding vertical shift register section for each vertical line, and then for each vertical shift register. The carriers are sequentially transferred in the vertical direction through the register section, and the accumulated carriers are transferred one horizontal line at a time through the horizontal shift register section, and taken out as f13 force from the output end. In this case, the vertical shift register section is configured by, for example, a two-phase one-drive COD.

The above two-phase drive CCD is constructed by forming an insulating layer 13 of 5 in 2 silicon dioxide on a semiconductor substrate 12 with different thicknesses.
Forming a plurality of #ij electrically connected / foot electrodes 14 consisting of a first electrode part 14a and a second electrode part 14b,
It is constructed so that every other shift electrode 14 is connected in common to operate with two-phase clock pulses φ1 and φ2. The first electrode section 14a and the second electrode section 14b are formed of metal silicide having a photoshield effect.

Furthermore, the semiconductor substrate 12 on which the shift electrode 14 and the light receiving section 11 are formed is covered with a photoconductor layer 15 made of antimony trisulfide, amorphous silicon, etc., and a transparent conductive film 16 made of indium oxide, etc., and is used as an imaging device. used.

In the above embodiment, since the shift 1)-pole 14 for driving each shift register section is formed of metal silicideb, incident light from the outside does not enter each shift register section, and this imaging The normal operation of the device will not be disturbed.

In addition, there is no need to use a special member to block external light from entering the shift register section, making it easy to use.
Since the conventional manufacturing process can be used as is, there is no increase in manufacturing costs.

By the way, similar to the second embodiment, the present invention can be applied to a CCD solid-state imaging device using an interline transfer method.

As shown in FIG. 4, this interline transfer type CCD imaging device includes a light receiving section 21, a vertical shift register section for transferring minority carriers accumulated in the light receiving section 21 for each vertical line, and A shift Mt pole 22 for driving the vertical shift register section is formed of metal silicide. Further, the electrode 24 of the overflow drain 23 is also formed of metal silicide to separate the vertical lines.

Therefore, the area other than the light receiving part 21 is shielded from light by the shift electrode 22 and the electrode 24 of the overflow drain 23, and the same effect as in the previous embodiment can be obtained.

Furthermore, it goes without saying that the present invention can be applied to any type of signal/charge transfer imaging type 14ccD solid-state imaging device.

<Embodiment 2> Next, the present invention will be explained with particular reference to its application to an active polymer (IJ) type reflective liquid crystal display device.

The liquid crystal display device has switch 10S as shown in FIG.
) An integrated circuit section 31 consisting of transistors, MOS capacitors, and electrode layers. It is composed of a guest-host type liquid crystal 32 and a facing glass 34 including a common electrode 33.

The integrated circuit section 31 may be a transistor or a
A plurality of electrodes 3B for driving the source diffusion layer 35, drain diffusion layer 36, filled oxide film 37, and the guest-host type liquid crystal 32 forming the νOS capacitor, 39.
40, and each of these electrodes 38, 39, 40 is coated with phosphosilicate glass 41 so that the stepped portions are gentle. So(~, each of these l
vl\i38.39゜40, reflection 'a h is K
ffi38 is aluminum silicide, aluminum silicide is sputtered, and white scattering occurs.
・C form 1) Stemmed and connected ``b: Becomes a pole'', (Life 39
is made of ditan-tungsden alloy, chromium, etc. Furthermore, g1′!, which is usually formed by an i-excellent polysilicide! One layer of the vertical electrode 40 is formed of metal silylide having a light-shielding property.

In the liquid crystal display device 1f i/C, addresses '7 and 1. - When switch 5 selects = 10 SI transistor, the load is transferred to video number 1, 10 S capacitor and 1 m tW, ! for storage of air load.
All 33 and ge; ζl・ost type liquid crystal 32° reflection 711,
(If the cargo is stored in the valley consisting of 38 i; Due to the presence of the quasi-load storage MOS capacitor, the orientation of the guest host type 7 crystal 32 is kept constant Qe for one field period.
can be kept.

In a liquid crystal display device having such a configuration, since each of the electrodes 3B, 39.40 has a light-shielding property, external light may not be transmitted due to the layout of each of these electrodes 38, 39, 40 or due to process considerations. The incident light passes through the source diffusion layer 35.
There is no part that penetrates into the drain diffusion layer 36 or the like.

Therefore, for example, malfunctions caused by spurious signals of the switch MO8) transistor can be prevented, and a highly reliable liquid crystal display device can be produced.

Furthermore, since metal silicide is used for the first layer electrode 40, it is possible to achieve a low resistance of the electrode 40 (7') and a high-quality liquid crystal display with a faster response speed. You can change the device.

Therefore, the present invention can be applied not only to the above-mentioned display device, but also to a Z-X-Y address type imaging system, for example, by disposing a photoconductor in place of the guest post type liquid crystal 32 of the display device. Various MO8 such as MOS type imaging device
Of course, the same effect can be obtained by using a JI type solid-state imaging device.

<Effects of the Invention> As is clear from the description of each of the above embodiments, the present invention (/C) 1 (is 1.
Metal silicide is used for / Koni,! 1. It is possible to block a large amount of incident light without providing a separate light (. 4) The solid-state optical-to-electrical converter 6 can be used.

[Brief explanation of drawings]

Figure 1 is a cross-sectional view of a conventional solid-state circular-to-electrical converter (...1y!1. 14.22.40..., i<-1h'IWl
Boxtoku II'l Sennin Sony Corporation Daisakihito ``Science Akira Koike

Claims (1)

[Claims] A solid-state optical-to-electrical conversion device in which the driving electrode is formed of metal silicide to block unnecessary incident light.