JPH022305B2 - - Google Patents
Info
- Publication number
- JPH022305B2 JPH022305B2 JP55042214A JP4221480A JPH022305B2 JP H022305 B2 JPH022305 B2 JP H022305B2 JP 55042214 A JP55042214 A JP 55042214A JP 4221480 A JP4221480 A JP 4221480A JP H022305 B2 JPH022305 B2 JP H022305B2
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- thin film
- conversion device
- semiconductor thin
- transfer means
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 claims description 64
- 239000010409 thin film Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 13
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052986 germanium hydride Inorganic materials 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910018110 Se—Te Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- XWNWBGHUGMRHNF-UHFFFAOYSA-N [SiH4].[Ge] Chemical compound [SiH4].[Ge] XWNWBGHUGMRHNF-UHFFFAOYSA-N 0.000 claims 2
- 239000003990 capacitor Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 7
- 108091008695 photoreceptors Proteins 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910017817 a-Ge Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- UNQHSZOIUSRWHT-UHFFFAOYSA-N aluminum molybdenum Chemical compound [Al].[Mo] UNQHSZOIUSRWHT-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/04—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa
- H04N1/19—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays
- H04N1/191—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays the array comprising a one-dimensional array, or a combination of one-dimensional arrays, or a substantially one-dimensional array, e.g. an array of staggered elements
- H04N1/192—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line
- H04N1/193—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line using electrically scanned linear arrays, e.g. linear CCD arrays
- H04N1/1938—Details of the electrical scanning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/04—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa
- H04N1/19—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays
- H04N1/191—Scanning arrangements, i.e. arrangements for the displacement of active reading or reproducing elements relative to the original or reproducing medium, or vice versa using multi-element arrays the array comprising a one-dimensional array, or a combination of one-dimensional arrays, or a substantially one-dimensional array, e.g. an array of staggered elements
- H04N1/192—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line
- H04N1/193—Simultaneously or substantially simultaneously scanning picture elements on one main scanning line using electrically scanned linear arrays, e.g. linear CCD arrays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Multimedia (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Image Input (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光電変換装置、殊にフアクシミリ、
デジタル複写機、レーザ記録装置等の光情報入力
部、バーコード読取装置やその他の文字や画像等
の読取装置等々に適用される固体化された光電変
換装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a photoelectric conversion device, particularly a facsimile,
The present invention relates to a solid-state photoelectric conversion device that is applied to optical information input units of digital copying machines, laser recording devices, etc., barcode reading devices, and other character and image reading devices.
最近、装置全体の小型化指向から、フアクシミ
リやデジタルコピア、レーザ記録装置等の光情報
入力部、或いはその他の、原稿に書かれた文字や
像を読取る装置に適用される光電変換装置として
再生される原画像のサイズに相等いか若しくはそ
れに近いサイズの受光面を有し、且つ解像性に優
れ、原画像を忠実に読取り得、然もコンパクトな
所謂長尺化された受光面を有する光電変換装置の
開発の発展が著しい。
Recently, with the trend toward miniaturization of the entire device, photoelectric conversion devices have been used as optical information input units of facsimile machines, digital copiers, laser recording devices, and other devices that read characters and images written on manuscripts. A photoelectric conversion device that has a light-receiving surface that is equal to or close to the size of the original image, has excellent resolution, can faithfully read the original image, and is compact and has a so-called elongated light-receiving surface. The development of equipment has made remarkable progress.
而乍ら、上記の様な長尺化された受光面を有す
る光電変換装置は、具備される光電変換部に附随
する信号処理回路部に大きな問題がある。 However, the photoelectric conversion device having the elongated light-receiving surface as described above has a major problem in the signal processing circuit section attached to the photoelectric conversion section.
即ち、前記信号処理回路部が光電変換部に較べ
て非常に大きなスペースを占め、光電変換部を長
尺化することで光路長を非常に短くすることが出
来ることにより生じた小型化の利点を生かし切れ
ないという点である。 In other words, the signal processing circuit section occupies a much larger space than the photoelectric conversion section, and by making the photoelectric conversion section longer, the optical path length can be extremely shortened. The point is that it cannot be fully utilized.
通常この問題点を解決するための一手段として
光電変換部の画素（光電変換要素）群を複数個に
ブロツク化して各ブロツクをマトリクス配線し、
１ブロツク毎にこの信号処理回路部を動作させる
方式が取られる。 Normally, one way to solve this problem is to divide the pixels (photoelectric conversion elements) of the photoelectric conversion unit into multiple blocks and wire each block in a matrix.
A method is adopted in which this signal processing circuit section is operated for each block.
ここで、このマトリクス配線において問題とな
るのは光電変換要素と信号処理部を接続し外部に
信号を取り出すために、ボンデイング工程が必要
であるが、光電変換要素と信号処理部を一体化し
なければ、このボンデイング工程が極端に多くな
ることである。 The problem with this matrix wiring is that a bonding process is required to connect the photoelectric conversion element and the signal processing section and take out the signal to the outside, but the photoelectric conversion element and the signal processing section must be integrated. , the number of bonding steps becomes extremely large.
通常この問題点を解決するために、結晶Si基板
上に信号処理部を設け、その上に、光電変換部を
作製し、一体化を計つている。 Normally, to solve this problem, a signal processing section is provided on a crystalline Si substrate, and a photoelectric conversion section is fabricated and integrated on top of the signal processing section.
しかしながら、長尺化された受光面をもたせる
ため長尺な光電変換部に隣接した信号処理部を設
ける必要がありこの要求に対して結晶基板を用い
ることは充分答えるものではない。 However, in order to provide an elongated light-receiving surface, it is necessary to provide a signal processing section adjacent to the elongated photoelectric conversion section, and the use of a crystal substrate does not fully meet this requirement.
本発明は上記の点に鑑みて成されたものであつ
て従来の光電変換装置の改良を計ることを目的と
し、長尺な光電変換部と信号処理部を半導体薄膜
で形成することによつて無欠陥で長尺な光電変換
装置が提供される。
The present invention has been made in view of the above points, and aims to improve conventional photoelectric conversion devices by forming a long photoelectric conversion section and a signal processing section using semiconductor thin films. A defect-free and elongated photoelectric conversion device is provided.
本発明の光電変換装置は受光面を有する光電変
換要素のＮ個が配されている光電変換部：前記光
電変換要素により光電変換された信号を蓄積する
蓄積手段；該蓄積手段に蓄積された信号電荷を転
送するための転送手段；該転送手段を時系列的に
駆動するためのシフトレジスター；で構成される
信号処理回路部：とが同一基板上に具備され、前
記光電変換要素、前記転送手段、及び前記シフト
レジスターの各半導体部が半導体薄膜で構成され
るとともに前記転送手段のトランジスタと前記蓄
積手段とに共有されている絶縁層を有することを
特徴とする。 The photoelectric conversion device of the present invention includes a photoelectric conversion section in which N photoelectric conversion elements each having a light-receiving surface are arranged; a storage means for accumulating a signal photoelectrically converted by the photoelectric conversion element; a signal accumulated in the storage means; A signal processing circuit section comprising: a transfer means for transferring charges; a shift register for driving the transfer means in time series; , and each semiconductor portion of the shift register is formed of a semiconductor thin film and has an insulating layer shared by the transistor of the transfer means and the storage means.
上記構成から成る本発明の光電変換装置は、複
数の光電変換要素を備えた光電変換部、蓄積手
段、転送手段及びシフトレジスターで構成される
信号処理回路部とを同一基板上に一体的に具備さ
せ、前記光電変換要素、前記転送手段及び前記シ
フトレジスターの各半導体薄膜でかつ前記蓄積手
段が薄膜で構成されることによつて、小型化を計
ることのみならずボンデイング数を減らし、且
つ、光電変換部の長尺化も計れるという格別顕著
な効果をもたらす。 The photoelectric conversion device of the present invention having the above configuration integrally includes a photoelectric conversion section having a plurality of photoelectric conversion elements, a signal processing circuit section consisting of a storage means, a transfer means, and a shift register on the same substrate. By configuring each of the photoelectric conversion element, the transfer means, and the shift register with a semiconductor thin film, and the storage means with a thin film, it is possible not only to reduce the size of the photoelectric conversion element, but also to reduce the number of bondings, and to This brings about a particularly remarkable effect in that the length of the conversion section can be increased.
以下図面に従つて本発明を具体的に説明する。 The present invention will be specifically described below with reference to the drawings.
第１図には本発明の光電変換装置の等価回路が
示される。この光電変換装置は一列アレー状に並
ぶｎ個の光電変換要素（PE１，PE２，…，
PEN）、該光電変換要素PEの出力信号が蓄積さ
れる蓄積手段としてコンデンサー（CE１，CE
２，…CEN）、前記光電変換要素の出力と出力端
子OUTに順次転送するための転送手段としての
トランジスタ（SW１，SW２，…，SWN）、及
びこれらの転送用トランジスタを次々に順序正し
くスイツチング動作させるためのシフトレジスタ
ー）Ｓ１１，…Ｓ１６…SN６）から構成される。 FIG. 1 shows an equivalent circuit of the photoelectric conversion device of the present invention. This photoelectric conversion device consists of n photoelectric conversion elements (PE1, PE2,...,
PEN), a capacitor (CE1, CE
2,...CEN), transistors (SW1, SW2,..., SWN) as transfer means for sequentially transferring the output of the photoelectric conversion element to the output terminal OUT, and switching operation of these transfer transistors one after another in an orderly manner. shift registers) S11,...S16...SN6).
受光面に入射された光情報は、光電変換要素
PEの抵抗を変調し、光電変換部の電源Ｖより蓄
積コンデンサーCEに流れ込む電荷量を変化させ
る。一方蓄積コンデンサーCEに貯えられた電荷
はＮ個の転送用トランジスターSWを、１つずつ
順番に導通するようにスイツチングすることによ
り順次、出力端子OUTから放電される。すなわ
ち、入射された光情報は、転送用トランジスター
SWの導通状態から次の導通状態になるまでの間
に、蓄積コンデンサーCEに貯えられた電荷量と
して時系列的に出力端子OUTから取り出される。 The light information incident on the light receiving surface is converted into a photoelectric conversion element.
The resistance of PE is modulated to change the amount of charge flowing from the power supply V of the photoelectric conversion unit to the storage capacitor CE. On the other hand, the charges stored in the storage capacitor CE are sequentially discharged from the output terminal OUT by sequentially switching on the N transfer transistors SW one by one to make them conductive. In other words, the incident optical information is transferred to the transfer transistor.
From one conduction state of SW to the next conduction state, the amount of charge stored in the storage capacitor CE is taken out from the output terminal OUT in time series.
転送用トランジスターSWを駆動するシフトレ
ジスターは１個の転送用トランジスターSW１に
対し、６個のトランジスターＳ１１，Ｓ１２，
…，Ｓ１６から構成される。 The shift register that drives the transfer transistor SW has six transistors S11, S12, and one transfer transistor SW1.
..., S16.
第２図にはシフトレジスター、転送用トランジ
スターSWのタイミングチヤートが示される。 FIG. 2 shows a timing chart of the shift register and transfer transistor SW.
転送クロツクφ1，φ2は互いに逆位相とし、φ1
がＮ個カウントされた後に、端子INに転送パル
スが加えられる。φ1，φ2がカウントされる毎に
SW１，SW２，…，SWNの順に、順次転送用ト
ランジスタSWが導通状態に駆動される。 Transfer clocks φ 1 and φ 2 are in opposite phase to each other, and φ 1
After N counts, a transfer pulse is applied to the terminal IN. Every time φ 1 and φ 2 are counted
The transfer transistors SW are sequentially driven into a conductive state in the order of SW1, SW2, . . . , SWN.
光電変換要素PEは光受容体層（半導体部）の
両面にオーミツク接合を持つ電極により構成され
る、いわゆるオートミツクセンサーが好適とさ
れ、転送用トランジスター、及びシフトレジスタ
ーを構成するトランジスターはすべて薄膜トラン
ジスターで形成される。 The photoelectric conversion element PE is preferably a so-called automic sensor, which is composed of electrodes with ohmic junctions on both sides of the photoreceptor layer (semiconductor part), and the transfer transistors and the transistors that make up the shift register are all thin film transistors. is formed.
光電変換要素PEを構成する半導体部である光
受容体層は、例えば、アモルフアス水素化シリコ
ン（ａ−Si：Ｈと以後略記する）、PbO，CdSe，
Sb2S2，Se，Se−Te，Se−Te−As，Se−Bi，
ZnCdTe，CdS，Cu2Sアモルフアス水素化ゲルマ
ニウム、アモルフアス水素化GexSi（１−ｘ）、等
の高感度の光導電材料で構成される。 The photoreceptor layer, which is a semiconductor part constituting the photoelectric conversion element PE, is made of, for example, amorphous hydrogenated silicon (hereinafter abbreviated as a-Si:H), PbO, CdSe,
Sb 2 S 2 , Se, Se−Te, Se−Te−As, Se−Bi,
It is composed of highly sensitive photoconductive materials such as ZnCdTe, CdS, Cu 2 S amorphous germanium hydride, and amorphous hydrogenated GexSi (1-x).
薄膜トランジスターSW，Ｓの半導体部を構成
する半導体薄膜は、例えばCdSe，ａ−Si：Ｈ，
ａ−Ge：Ｈ（アモルフアス水素化ゲルマニウム）、
アモルフアス水素化GexSi（１−ｘ）、多結晶シリ
コン等で構成される。 The semiconductor thin film constituting the semiconductor part of the thin film transistor SW, S is, for example, CdSe, a-Si:H,
a-Ge:H (amorphous germanium hydride),
Composed of amorphous hydrogenated GexSi (1-x), polycrystalline silicon, etc.
本発明においては、Ｎ，Ｐ，As，Sb，Bi等の
周期律表第族Ａの元素或いは、Ｂ，Al，Ga，
In，Tl等の周期率表第族Ａの元素を不純物と
してドーピングする事によつてｎ型或いはｐ型に
することが出来ることの利点から、光導電変換要
素の光受容体層及び薄膜トランジスターの半導体
部をａ−Si：Ｈで形成するのが好適とされる。 In the present invention, elements of group A of the periodic table such as N, P, As, Sb, Bi, or B, Al, Ga,
The photoreceptor layer of the photoconductive conversion element and the thin film transistor have the advantage that they can be made into n-type or p-type by doping with elements of group A of the periodic table such as In and Tl as impurities. Preferably, the semiconductor portion is formed of a-Si:H.
本発明においては、光受容体層の層厚は、光情
報の入射によつて生ずるホトキヤリアの拡散の度
合により決定されるが、好ましくは4000Å〜2μ
ｍ、より好適には6000Å〜1.5μｍとされるのが望
ましい。又、薄膜トランジスターの半導体薄膜層
の層厚は、絶縁層を介して設けられるゲート電極
に印加される電圧により生じる空乏層領域の層厚
よりも薄いことが望ましく、好ましくは1000Å〜
1μｍ、より好ましくは、4000Å〜1μｍが望まし
いものとされる。 In the present invention, the layer thickness of the photoreceptor layer is determined by the degree of photocarrier diffusion caused by the incidence of optical information, but is preferably 4000 Å to 2 μm.
m, more preferably 6000 Å to 1.5 μm. Further, the thickness of the semiconductor thin film layer of the thin film transistor is desirably thinner than the layer thickness of the depletion layer region generated by the voltage applied to the gate electrode provided through the insulating layer, and is preferably 1000 Å or more.
The desired thickness is 1 μm, more preferably 4000 Å to 1 μm.
光電変換要素、及び薄膜トランジスターが形成
される基板は、例えば基板側より光電変換要素の
受光面に光情報が入射される場合には、透光性の
材質のものが採用されるが、基板とは反対面上に
形成された光電変換要素側よりその受光面に光情
報が入射される場合には、このような制限は除く
ことが出来る。 The substrate on which the photoelectric conversion element and the thin film transistor are formed is made of a translucent material, for example, when optical information is incident on the light receiving surface of the photoelectric conversion element from the substrate side. This limitation can be removed if optical information is incident on the light receiving surface from the photoelectric conversion element side formed on the opposite surface.
本発明において基板として使用される好適な材
料としては、平面性、表面平滑性、耐熱性、製造
時の諸薬品に対しての耐性に優れたものであれば
通常市販されている或いは入手し得るものの多く
が挙げられる。その様な基板形成材料としては、
具体的には例えば、ガラス、7059番ガラス（コー
ニング社製）、マグネシア、ベリリア、スピネル、
酸化イツトリユウム等の透光性材料、アルミニウ
ムモリブデン、特殊ステンレス鋼（JIS規格SuS）
タンタル等の非透光性金属材料が挙げられる。 Suitable materials to be used as the substrate in the present invention include those that are commercially available or can be obtained as long as they have excellent flatness, surface smoothness, heat resistance, and resistance to various chemicals during manufacturing. Many things can be mentioned. Such substrate forming materials include:
Specifically, for example, glass, No. 7059 glass (manufactured by Corning), magnesia, beryllia, spinel,
Translucent materials such as yttrium oxide, aluminum molybdenum, special stainless steel (JIS standard SuS)
Examples include non-transparent metal materials such as tantalum.
第３図には、本発明における光電変換要素の構
造を示す模式的斜視図が示される。この実施態様
例では基板材料としてガラスを用い、受光面を基
板の光電変換要素が作られている側に対し、反対
側とする。このため、基板側受光面電極３０２は
Ｎ個の光受容体層に対し、共通に接続され透光性
の材質のものが採用される。例えばSnO2，ITO
（インジユウム錫酸化物）、In2O3等の透光性導電
膜が使用される。 FIG. 3 is a schematic perspective view showing the structure of the photoelectric conversion element in the present invention. In this embodiment, glass is used as the substrate material, and the light-receiving surface is on the opposite side of the substrate to the side on which the photoelectric conversion element is formed. Therefore, the substrate-side light-receiving surface electrode 302 is commonly connected to the N photoreceptor layers and is made of a light-transmitting material. For example, SnO 2 , ITO
(indium tin oxide), In 2 O 3 or the like is used.
光受容体層３０３はnondope，ｎ型或いはｉ型
のａ−Si：Ｈで形成され、受光面側電極３０２、
及び上部画素電極３０５の接合部３０４において
n+型にdopeされる。このn+層３０４は、受光面
及び上部画素電極と光受容体層との間にオーミツ
クな接合をとるために設けられる。 The photoreceptor layer 303 is formed of nondope, n-type or i-type a-Si:H, and the light-receiving surface side electrode 302,
and at the junction 304 of the upper pixel electrode 305
Doped to n + type. This n + layer 304 is provided to form an ohmic bond between the light receiving surface, the upper pixel electrode, and the photoreceptor layer.
上部上画素電極は、Al等の材料が用いられ、
蓄電コンデンサーCE、及び転送用トランジスタ
ーSWに接続される。 The upper pixel electrode is made of a material such as Al,
Connected to storage capacitor CE and transfer transistor SW.
蓄積コンデンサーCEは絶縁層３０６と、該絶
縁層３０６を挾持する電極３０７，３０８により
構成される。絶縁層３０６の材料としては例えば
グロー放電法で作成されるSi3N4，スパツタ法で
作成されるSiO2，CVD法で作成されるSiO2が挙
げられ、本発明では半導体薄膜を構成するａ−
Si：Ｈがグロー放電で作製しうることから、グロ
ー放電法で作成されるSi3N4が好適とされる。 The storage capacitor CE is composed of an insulating layer 306 and electrodes 307 and 308 that sandwich the insulating layer 306. Examples of the material for the insulating layer 306 include Si 3 N 4 made by a glow discharge method, SiO 2 made by a sputtering method, and SiO 2 made by a CVD method. −
Since Si:H can be produced by glow discharge, Si 3 N 4 produced by glow discharge method is preferred.
第４図には薄膜トランジスターの構造を説明す
る為の模式的斜視図が示される。non−dope′n
型、或いはｉ型ａ−Si：Ｈから成る半導体薄膜層
４０４に対し絶縁層４０２をはさんでゲート電極
４０３を形成し、半導体薄膜層４０４の上部には
n+型層４０５をはさんでソース電極４０６、ド
レイン電極４０７が形成される。 FIG. 4 shows a schematic perspective view for explaining the structure of a thin film transistor. non-dope′n
A gate electrode 403 is formed on a semiconductor thin film layer 404 made of a-type or i-type a-Si:H with an insulating layer 402 sandwiched therebetween.
A source electrode 406 and a drain electrode 407 are formed with the n + type layer 405 sandwiched therebetween.
絶縁層４０２の材料としてはグロー放電法で作
成されるSi3N4、スパツタ法で作成されるSiO2，
CVD法で作成されるSiO2等が挙げられ本発明で
はグロー放電法で作成されるSi3N4が好適とされ
る。ゲート電極４０３、ソース電極４０６、及び
ドレイン電極４０７の材料としてはAl等が好適
とされる。 The material of the insulating layer 402 is Si 3 N 4 created by glow discharge method, SiO 2 created by sputtering method,
Examples include SiO 2 produced by a CVD method, and Si 3 N 4 produced by a glow discharge method is preferred in the present invention. Al or the like is preferable as the material for the gate electrode 403, source electrode 406, and drain electrode 407.
薄膜トランジスター間の配線、及び薄膜トラン
ジスターと光電変換要素間の電気的な接続は、絶
縁層４０２で電気的に分離された２層の配線パタ
ーンにより接続される。また、これらの２層間の
接続は絶縁層４０２の穴４０９によりスルーホー
ルで接続される。 The wiring between the thin film transistors and the electrical connection between the thin film transistor and the photoelectric conversion element are connected by a two-layer wiring pattern electrically separated by an insulating layer 402. Furthermore, the connection between these two layers is made through a hole 409 in the insulating layer 402.
薄膜トランジスターでシフトレジスターを構成
した場合、第１図のＣ１１，Ｃ１２，…，CN２
で示されるコンデンサーを必要とする。 When the shift register is configured with thin film transistors, C11, C12,..., CN2 in Fig. 1
Requires a capacitor shown in .
第５図には、上記コンデンサーを含む薄膜トラ
ンジスターの構造の一例が示される。第５図にお
いて、ゲート電極５０３は、通常の薄膜トランジ
スター構造よりも大きくとられ、絶縁層５０２を
介してソース電極５０７との間に所定の静電容量
を持つように作られる。 FIG. 5 shows an example of the structure of a thin film transistor including the above capacitor. In FIG. 5, a gate electrode 503 is larger than a normal thin film transistor structure, and is formed to have a predetermined capacitance between it and a source electrode 507 via an insulating layer 502.
第６図には、本発明における配線パターンの一
例が示される。光電変換要素６０１の上部電極よ
り蓄積コンデンサー６０２、転送用トランジスタ
ー６０３に接続される。シフトレジスターはトラ
ンジスター３０４，６０６，６０７，６０８，６
０９、及びコンデンサーを含むトランジスター６
０５により構成され、これ等の構成がＮ個直列に
組み合される。 FIG. 6 shows an example of the wiring pattern in the present invention. The upper electrode of the photoelectric conversion element 601 is connected to a storage capacitor 602 and a transfer transistor 603. The shift register is transistors 304, 606, 607, 608, 6
09, and transistor 6 including a capacitor
05, and N pieces of these structures are combined in series.
第１図は本発明の光電変換装置の等価回路を示
す回路図、第２図は本発明の光電変換装置の動作
のタイミングを示すタイミングチヤート図、第３
図は本発明における光電変換要素の構造を示す模
式的斜視図、第４図は、本発明における薄膜トラ
ンジスターの構造を示す模式的斜視図、第５図は
本発明における転送コンデンサーを含む薄膜トラ
ンジスターの構造を示す模式的斜視図、第６図は
本発明の配線パターンの一例を示す模式的斜視図
である。
FIG. 1 is a circuit diagram showing an equivalent circuit of the photoelectric conversion device of the present invention, FIG. 2 is a timing chart showing the operation timing of the photoelectric conversion device of the present invention, and FIG.
The figure is a schematic perspective view showing the structure of a photoelectric conversion element in the present invention, FIG. 4 is a schematic perspective view showing the structure of a thin film transistor in the present invention, and FIG. 5 is a schematic perspective view showing the structure of a thin film transistor in the present invention. FIG. 6 is a schematic perspective view showing an example of the wiring pattern of the present invention.
Claims (1)
ている光電変換部： 前記光電変換換要素により光電変換された信号
を蓄積する蓄積手段； 該蓄積手段に蓄積された信号電荷を転送するた
めの転送手段； 該転送手段を時系列的に駆動するためのシフト
レジスター； で構成される信号処理回路部： とが同一基板上に具備され、前記光電変換要素、
前記転送手段、及び前記シフトレジスターの各半
導体部が半導体薄膜で構成されるとともに前記転
送手段のトランジスタと前記蓄積手段とに共有さ
れている絶縁層を有することを特徴とする光電変
換装置。 ２ 前記光電変換要素の半導体薄膜がアモルフア
ス水素化シリコンで構成されている特許請求の範
囲第１項に記載の光電変換装置。 ３ 前記光電変換要素の半導体薄膜がアモルフア
ス水素化ゲルマニウムで構成されている特許請求
の範囲第１項に記載の光電変換装置。 ４ 前記光電変換要素の半導体薄膜がアモルフア
ス水素化ゲルマニウムシリコンで構成されている
特許請求の範囲第１項に記載の光電変換装置。 ５ 前記光電変換要素の半導体薄膜が、PbO，
CdSe，Sb2S3，Se，Se−Te，Se−Te−As，Se
−Bi，ZnCdTe，CdS，Cu2Sの中より選択される
光導電材で構成されている特許請求の範囲第１項
に記載の光電変換装置。 ６ 前記転送手段の半導体薄膜がアモルフアス水
素化シリコンで構成されている特許請求の範囲第
１項に記載の光電変換装置。 ７ 前記転送手段の半導体薄膜が多結晶シリコン
構成されている特許請求の範囲第１項に記載の光
電変換装置。 ８ 前記転送手段の半導体薄膜が、CdS、アモル
フアス水素化ゲルマニウム、アモルフアス水素化
ゲルマニウムシリコン、の中より選択される半導
体材料で構成されている特許請求の範囲第１項に
記載の光電変換装置。 ９ 前記シフトレジスターを構成するトランジス
ターが薄膜トランジスターである特許請求の範囲
第１項に記載の光電変換装置。 １０ 前記半導体薄膜の層厚が4000Å〜2μｍで
ある特許請求の範囲第２項に記載の光電変換装
置。 １１ 前記半導体薄膜にはオーミツク接合を介し
て電極が設けられている特許請求の範囲第２項に
記載の光電変換装置。[Scope of Claims] 1. A photoelectric conversion section in which N photoelectric conversion elements each having a light-receiving surface are disposed; Storage means for storing signals photoelectrically converted by the photoelectric conversion elements; Signals stored in the storage means a signal processing circuit section comprising: a transfer means for transferring signal charges; a shift register for driving the transfer means in time series;
A photoelectric conversion device characterized in that each of the semiconductor parts of the transfer means and the shift register is made of a semiconductor thin film, and has an insulating layer shared by the transistor of the transfer means and the storage means. 2. The photoelectric conversion device according to claim 1, wherein the semiconductor thin film of the photoelectric conversion element is made of amorphous hydrogenated silicon. 3. The photoelectric conversion device according to claim 1, wherein the semiconductor thin film of the photoelectric conversion element is made of amorphous germanium hydride. 4. The photoelectric conversion device according to claim 1, wherein the semiconductor thin film of the photoelectric conversion element is made of amorphous germanium silicon hydride. 5 The semiconductor thin film of the photoelectric conversion element is made of PbO,
CdSe, Sb 2 S 3 , Se, Se−Te, Se−Te−As, Se
-The photoelectric conversion device according to claim 1, which is made of a photoconductive material selected from among Bi, ZnCdTe, CdS, and Cu2S . 6. The photoelectric conversion device according to claim 1, wherein the semiconductor thin film of the transfer means is made of amorphous hydrogenated silicon. 7. The photoelectric conversion device according to claim 1, wherein the semiconductor thin film of the transfer means is made of polycrystalline silicon. 8. The photoelectric conversion device according to claim 1, wherein the semiconductor thin film of the transfer means is made of a semiconductor material selected from CdS, amorphous germanium hydride, and amorphous germanium silicon hydride. 9. The photoelectric conversion device according to claim 1, wherein the transistors constituting the shift register are thin film transistors. 10. The photoelectric conversion device according to claim 2, wherein the semiconductor thin film has a layer thickness of 4000 Å to 2 μm. 11. The photoelectric conversion device according to claim 2, wherein the semiconductor thin film is provided with an electrode via an ohmic junction.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4221480A JPS56138969A (en) | 1980-03-31 | 1980-03-31 | Photoelectric converter |
| DE19813112907 DE3112907A1 (en) | 1980-03-31 | 1981-03-31 | "PHOTOELECTRIC SOLID BODY CONVERTER" |
| US06/558,573 US4461956A (en) | 1980-03-31 | 1983-12-06 | Solid-state photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4221480A JPS56138969A (en) | 1980-03-31 | 1980-03-31 | Photoelectric converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56138969A JPS56138969A (en) | 1981-10-29 |
| JPH022305B2 true JPH022305B2 (en) | 1990-01-17 |
Family
ID=12629778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4221480A Granted JPS56138969A (en) | 1980-03-31 | 1980-03-31 | Photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56138969A (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6064467A (en) * | 1983-09-20 | 1985-04-13 | Seiko Epson Corp | Solid-state image sensor |
| JPS59126666A (en) * | 1983-01-10 | 1984-07-21 | Seiko Epson Corp | Solid-image sensor |
| JPH0612811B2 (en) * | 1983-04-04 | 1994-02-16 | セイコーエプソン株式会社 | Method for manufacturing photoelectric conversion device |
| JPS59188168A (en) * | 1983-04-08 | 1984-10-25 | Seiko Epson Corp | Solid state image sensor |
| JPS59211262A (en) * | 1983-05-16 | 1984-11-30 | Fuji Photo Film Co Ltd | Radiation image detector and radiation image detecting method using the same |
| JPH0682858B2 (en) * | 1983-05-16 | 1994-10-19 | 富士写真フイルム株式会社 | Radiation image detection method |
| JPH03135525A (en) * | 1983-09-20 | 1991-06-10 | Seiko Epson Corp | Production of solid state image sensor |
| JP2749051B2 (en) * | 1988-04-01 | 1998-05-13 | テキサス インスツルメンツ インコーポレイテツド | Image sensor array horizontal scanner |
| JPH0372770A (en) * | 1990-07-17 | 1991-03-27 | Seiko Epson Corp | Reader |
| JP3189990B2 (en) * | 1991-09-27 | 2001-07-16 | キヤノン株式会社 | Electronic circuit device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5199493A (en) * | 1975-02-28 | 1976-09-02 | Oki Electric Ind Co Ltd | |
| JPS5366115A (en) * | 1976-11-26 | 1978-06-13 | Hitachi Ltd | Solid image pickup equipment |
| JPS54139342A (en) * | 1978-04-20 | 1979-10-29 | Canon Inc | Information processing unit |
| JPS55108781A (en) * | 1979-02-15 | 1980-08-21 | Fuji Xerox Co Ltd | Light receiving element |
-
1980
- 1980-03-31 JP JP4221480A patent/JPS56138969A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5199493A (en) * | 1975-02-28 | 1976-09-02 | Oki Electric Ind Co Ltd | |
| JPS5366115A (en) * | 1976-11-26 | 1978-06-13 | Hitachi Ltd | Solid image pickup equipment |
| JPS54139342A (en) * | 1978-04-20 | 1979-10-29 | Canon Inc | Information processing unit |
| JPS55108781A (en) * | 1979-02-15 | 1980-08-21 | Fuji Xerox Co Ltd | Light receiving element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56138969A (en) | 1981-10-29 |
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