JPS57173968A - Solid state image pickup device - Google Patents

Solid state image pickup device

Info

Publication number
JPS57173968A
JPS57173968A JP56059614A JP5961481A JPS57173968A JP S57173968 A JPS57173968 A JP S57173968A JP 56059614 A JP56059614 A JP 56059614A JP 5961481 A JP5961481 A JP 5961481A JP S57173968 A JPS57173968 A JP S57173968A
Authority
JP
Japan
Prior art keywords
electrode
substrate
amorphous
image pickup
solid state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56059614A
Other languages
Japanese (ja)
Inventor
Kazuhiro Kawajiri
Yuzo Mizobuchi
Mitsuo Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP56059614A priority Critical patent/JPS57173968A/en
Publication of JPS57173968A publication Critical patent/JPS57173968A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer

Abstract

PURPOSE:To reduce dark current by a method wherein a photodetector section constituted of an amorphous Si Schottky barrier photodiode is built on a scanning circuit provided substrate. CONSTITUTION:A p<+> region 11 is provided for the formation of a diode and, at the same time, a scanning circuit forming n<+> type region 12 (CCD) or p<+> type region 13 (BBD) are formed on an n type semiconductor substrate 10. A gate electrode 14 is built on the substrate 10 across an insulator film 15 and an insulator 16 is laid on the electrode 14. Next, on the substrate 10, a diode electrode 17 is provided electrically connected with the p<+> type region 11, and a Schottky material made layer 18 and an amorphous Si layer 19 are formed on the electrode 17, with a Schottky barrier photodiode formed by the layers 18 and 19. A transparent electrode 20 is laid on the amorphous Si layer 19 for the completion of a solid state image pickup device.
JP56059614A 1981-04-20 1981-04-20 Solid state image pickup device Pending JPS57173968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56059614A JPS57173968A (en) 1981-04-20 1981-04-20 Solid state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56059614A JPS57173968A (en) 1981-04-20 1981-04-20 Solid state image pickup device

Publications (1)

Publication Number Publication Date
JPS57173968A true JPS57173968A (en) 1982-10-26

Family

ID=13118295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56059614A Pending JPS57173968A (en) 1981-04-20 1981-04-20 Solid state image pickup device

Country Status (1)

Country Link
JP (1) JPS57173968A (en)

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