JPS57136361A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57136361A
JPS57136361A JP56022628A JP2262881A JPS57136361A JP S57136361 A JPS57136361 A JP S57136361A JP 56022628 A JP56022628 A JP 56022628A JP 2262881 A JP2262881 A JP 2262881A JP S57136361 A JPS57136361 A JP S57136361A
Authority
JP
Japan
Prior art keywords
layer
laminated
semiconductor device
channel
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56022628A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP56022628A priority Critical patent/JPS57136361A/en
Publication of JPS57136361A publication Critical patent/JPS57136361A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To enhance photo sensibility of a laminated channel type IG semiconductor device by a method wherein a source layer, a channel layer and a drain layer are laminated on a transparent substrate, and a gate electrode is provided on the side thereof interposing an insulating film between them. CONSTITUTION:A transparent electrode 20 of tin oxide, etc., is provided on the transparent substrate 1, the amorphous or semiamorphous semiconductor layer 2 for source, the semiconductor layer 4 for channel and the semiconductor layer 5 for drain having breadth of forbidden band smaller than the layer 2 are laminated thereon, and the insulating film is provided on the side thereof. The gate electrode is provided thereon to constitute the laminated channel type insulated gate semiconductor device. Accordingly light irradiated through the substrate can be absorbed effectively to enhance sensibility.
JP56022628A 1981-02-17 1981-02-17 Semiconductor device Pending JPS57136361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56022628A JPS57136361A (en) 1981-02-17 1981-02-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56022628A JPS57136361A (en) 1981-02-17 1981-02-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57136361A true JPS57136361A (en) 1982-08-23

Family

ID=12088084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56022628A Pending JPS57136361A (en) 1981-02-17 1981-02-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57136361A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113481A (en) * 1975-03-28 1976-10-06 Sony Corp Semiconductor device
JPS5515229A (en) * 1978-07-18 1980-02-02 Semiconductor Res Found Semiconductor photograph device
JPS5539404A (en) * 1978-08-18 1980-03-19 Hitachi Ltd Solid state pickup device
JPS564286A (en) * 1979-06-25 1981-01-17 Canon Inc Photoelectric converter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51113481A (en) * 1975-03-28 1976-10-06 Sony Corp Semiconductor device
JPS5515229A (en) * 1978-07-18 1980-02-02 Semiconductor Res Found Semiconductor photograph device
JPS5539404A (en) * 1978-08-18 1980-03-19 Hitachi Ltd Solid state pickup device
JPS564286A (en) * 1979-06-25 1981-01-17 Canon Inc Photoelectric converter

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