JPS59227173A - Photoelectric conversion element and manufacture thereof - Google Patents
Photoelectric conversion element and manufacture thereofInfo
- Publication number
- JPS59227173A JPS59227173A JP58102164A JP10216483A JPS59227173A JP S59227173 A JPS59227173 A JP S59227173A JP 58102164 A JP58102164 A JP 58102164A JP 10216483 A JP10216483 A JP 10216483A JP S59227173 A JPS59227173 A JP S59227173A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- amorphous silicon
- photoelectric conversion
- conversion element
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 34
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 8
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910003437 indium oxide Inorganic materials 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 2
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 claims 1
- 238000001914 filtration Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract description 2
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 16
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- JFLLBUCQAGGWFA-UHFFFAOYSA-N [O-2].[In+2] Chemical compound [O-2].[In+2] JFLLBUCQAGGWFA-UHFFFAOYSA-N 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- -1 gold halide Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- BDQXIEGZEYTXDW-UHFFFAOYSA-N indium;oxotin;silicon Chemical compound [Si].[In].[Sn]=O BDQXIEGZEYTXDW-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
Abstract
Description
【発明の詳細な説明】
産業上の利用分野〕
本発明は、光電変換素子Ｋかかり、特にファシミリ等の
画像入力部忙用いられる光電変換子に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a photoelectric conversion element K, and particularly to a photoelectric conversion device frequently used in image input units of facsimiles and the like.
従来技術〕
最近、ファクシミリ等の画像入力部の小型化）まかるた
めに、原稿と同一寸法の長尺読取り子の開発が活発に行
なわれている。この長尺吹り素子としては、光導電体と
して非晶質シらなる第１′成隠と透光性のＩｆ ２戚極
とで挾んだザンドイツチ病造の薄膜受光素子は、光応答
性が早く、耐ｆｆ１ｊＪｔ性にばれ−〔いることから広
い用途が期待されている。[Prior Art] Recently, in order to reduce the size of image input units such as facsimile machines, development of long readers having the same dimensions as original documents has been actively conducted. As for this elongated blown element, a thin film light-receiving element of Sanderutsch's structure, which is sandwiched between a 1' polarizer made of amorphous silicon as a photoconductor and a transparent If 2 polar electrode, is photoresponsive. It is expected to be used in a wide range of applications because of its fast resistance and excellent ff1jJt resistance.
非晶質シリコンは単結晶シリコンに比べ、大面積化が容
易であり、３００Ｃ程度の低温で着膜可能な為これを用
いた素子は製造が容易で、かつ可視領域の光吸収係数も
１桁以上大きい為、膜厚も１／Ｊｆｆｌ程度と、薄くて
ずみ、注目されている。Compared to single-crystal silicon, amorphous silicon can be easily made into a large area, and can be deposited at a low temperature of about 300C, making it easy to manufacture devices using it.The light absorption coefficient in the visible region is also one digit. Since it is larger than this, the film thickness is also thin, about 1/Jffl, and it is attracting attention.
しかしながら、この素子の電圧−市原特性をみると、暗
電流ｂ’−＠圧と共に増大し明暗比が十分にとれないと
いう不都合があった。これは、透光性の第２電極とアモ
ルファスシリコンの界面において、電位障壁が小さいた
め、透光性の第２電極からの電子の注入が起り易いため
と考えられる。However, when looking at the voltage-Ichihara characteristics of this element, there was a problem that the dark current b'-@ increased with the voltage, making it impossible to obtain a sufficient brightness/darkness ratio. This is considered to be because the potential barrier is small at the interface between the light-transmitting second electrode and the amorphous silicon, so that injection of electrons from the light-transmitting second electrode is likely to occur.
本発明は前記実情に鑑みてなされたもので、暗電流を抑
制し、明暗比が十分大であるような光電変換素子を提供
することを目的とする。The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a photoelectric conversion element that suppresses dark current and has a sufficiently large contrast ratio.
〔発明の構成〕
本発明の光電変換素子は、アモルファスシリコン層と、
金属酸化物からなる透光性電極との接合部を両者の相互
拡散層としたことを特徴とするものである。すなわち、
接合部はアモルファスシリコン膜中に金属酸化物を含有
した組成となって、アモルファスシリコンのバンドギャ
ップは実効的に増大することになり金ハ酸化物とアモル
ファスシリコンとの間の電位障壁が高められ、この電位
障壁によって電極からアモルファスシリコン層への電子
の注入が阻止されるま
ため、暗電流は従来の素子に比べ一以下に抑制御０
される。[Structure of the Invention] The photoelectric conversion element of the present invention includes an amorphous silicon layer,
It is characterized in that the junction with the transparent electrode made of metal oxide serves as a mutual diffusion layer between the two. That is,
The junction has a composition containing a metal oxide in the amorphous silicon film, and the band gap of the amorphous silicon is effectively increased, increasing the potential barrier between the gold halide oxide and the amorphous silicon. This potential barrier prevents the injection of electrons from the electrode into the amorphous silicon layer, so the dark current is suppressed to less than 1 compared to conventional elements.
この接合部の拡散層は、室温８度の低温下で、カッ粒子
エネルキ’ 抑制り、、つつ、アモルファスシリコン層
上に金属酸化物層からなる１〜光性は極を着膜したのち
に、酸素雰囲気中で１５０ｔｌｌ”〜２５０Ｃの熱処理
（アニール）を施すことにより形成される。The diffusion layer at this junction suppresses the particle energy at a low temperature of 8 degrees Celsius, and after depositing a metal oxide layer on the amorphous silicon layer, It is formed by performing heat treatment (annealing) at 150 tll'' to 250 C in an oxygen atmosphere.
以下に、本発明実施例の光ｔに変換素子について図面を
参照しつつ説明する。Hereinafter, a light t converting element according to an embodiment of the present invention will be explained with reference to the drawings.
本発明実施例の光電変換素子は、第１図に平面図を、第
２図にそのＡ−Ａ断面を示すごとく絶縁性のガラス基板
ｌとこのガラス基板上に所定形状に着膜された複数個の
クロム（Ｏｒ）電（全２とさらにこの上に一体的に形成
されたアモルファスシリコン層３と、アモルファスシリ
コン層３の上部に形成された拡散層４を介して、アモル
ファスシリコン１６３の上に一体的に形成された透光性
の酸化インジウノ、錫（工Ｔｏ）電極５とより構成され
ている。ここでクロム電極２ノ膜ｎハ約３０００ Ｘ
１アモルファスシリコン層３のＪ［Ｊ’）−は約１μｍ
１酸化インジウム賜電極の膜厚は０．１μｍである。As shown in FIG. 1 as a plan view and as shown in FIG. chromium (Or) electrodes (total 2), an amorphous silicon layer 3 integrally formed thereon, and a diffusion layer 4 formed on the top of the amorphous silicon layer 3, on top of the amorphous silicon 163. It is composed of an integrally formed translucent indium oxide and tin electrode 5.Here, the chromium electrode 2 film n is approximately 3000 x
1 J[J')- of amorphous silicon layer 3 is approximately 1 μm
The film thickness of the indium monoxide electrode is 0.1 μm.
次に、上記光域変換素子の製造方法について説明する。Next, a method for manufacturing the above light range conversion element will be explained.
まず、ガラス基板ｌ上に、電子ビーム蒸着法でクロム薄
膜を約３０００ Ｘの厚さに着りヘする。First, a thin chromium film with a thickness of about 3000× is deposited on a glass substrate l by electron beam evaporation.
このとき、基板温度は２５０Ｃとする１次いでフォトリ
ソグラフィにより、所望の形状に分割し、複数個のクロ
ム電極２を形成する。At this time, the substrate is divided into desired shapes by first photolithography at a substrate temperature of 250C to form a plurality of chromium electrodes 2.
更に、プラズマ化学蒸着法（プラズマＣＶＤ法）により
、光導電体としてのアモルファスシリコン層を０．１μ
ｍ堆積する。作製条件としては、モノシラン（ＢｉＨ，
）ガスを使用し、基板温度２００〜ａｏｏｃ、圧力０．
２−、−０．５ トＡ、 （Ｔｏｒｒ） 電力密度２０
〜７０ ｍｖｒ／ｃｓ！である。Furthermore, by plasma chemical vapor deposition method (plasma CVD method), an amorphous silicon layer as a photoconductor was deposited to a thickness of 0.1 μm.
Deposit m. The production conditions were monosilane (BiH,
) gas, substrate temperature 200~aooc, pressure 0.
2-, -0.5 Torr (Torr) Power density 20
~70 mvr/cs! It is.
続いて、ＤＣスパッタリング法Ｋ１り、透明電極として
酸化インジウム錫膜な約０．１μｍ着膜する。着膜条件
としては、ターゲットに酸化インジウム錫（９０ｍｏＩ
！％酸化インジウムエｎ、０３＋ １０ ｍａｔ％酸化
錫Ｓｎｏ、）を使用し、酸素分圧０．５〜１．５ Ｘ
１０ Ｔｏｒｒ、全圧（アルボ７ Ａ ｒ＋酸素０＠
） ＝ １〜５ Ｘ Ｉ Ｑ Ｔｏｒｒ Ｊ＋％
板温度ｌＯ〜４０Ｃとし、電力密度は最初３０ ｍ Ｗ
／ｃｒＩで１００Ｘの膜厚となるまで着膜した後、２０
０ｍＷ／ｄとし、合わせて０．１μｍとなるまで着膜す
る。Subsequently, an indium tin oxide film having a thickness of about 0.1 μm is deposited as a transparent electrode by DC sputtering method K1. As for the film deposition conditions, the target was indium tin oxide (90 moI).
! % indium oxide, 03+ 10 mat% tin oxide,) and oxygen partial pressure 0.5 to 1.5
10 Torr, total pressure (Arbo 7 A r + oxygen 0 @
) = 1~5 X I Q Torr J+%
The plate temperature was 10~40C, and the power density was initially 30 mW.
/crI to a film thickness of 100X, and then
0 mW/d, and the film is deposited to a total thickness of 0.1 μm.
そして最後に、２００Ｃのｉｌ Ｍ＋アルゴン（Ａｒ）
雰囲気中又は大気中で、約３０分間熱処理を行なう。And finally, 200C il M+Argon (Ar)
Heat treatment is performed for about 30 minutes in an atmosphere or air.
このようにして形成された光電変換素子の電流−電圧特
性を第３図に示す、第３図中、横動は電圧（Ｖ）、縦軸
は電流（Ａ） ｙ示し、曲線Ａは光亀流−電圧特性曲線
、曲線Ｂは暗電流の電流−電圧特性曲線を示している。The current-voltage characteristics of the photoelectric conversion element thus formed are shown in FIG. 3. In FIG. Curve B shows the current-voltage characteristic curve of dark current.
測定にあたり、クロム電極側をアース電位にとり、酸化
インジウム錫膜側に負バイヤスを印加した。また、光電
流を測定する際の光源としては緑色螢光灯を使用し、照
度は１００ルクス（ｌχ）となるように調整した。In the measurement, the chromium electrode side was set to earth potential, and a negative bias was applied to the indium tin oxide film side. Further, a green fluorescent lamp was used as a light source when measuring photocurrent, and the illuminance was adjusted to 100 lux (lχ).
比較の為に、従来の光電変換素子の特性曲線を点線で示
す。点ｌｓＯ％点線りは夫々、従来の光電変換素子の光
電流の電流−電圧特性曲線、暗電流の電流−電圧特性曲
線を示す。この従来の光電変換素子は、曲４ｊＡ、Ｂで
示した本発明実施例の光電変換素子と比較して、拡散層
４を持たない−すなわち、製造工程においては最後の熱
処理を行なわない一点が異なるのみで、他はすべて同様
であり、測定条件も同じｔある。For comparison, the characteristic curve of a conventional photoelectric conversion element is shown by a dotted line. The dotted line indicates the current-voltage characteristic curve of photocurrent and the current-voltage characteristic curve of dark current, respectively, of a conventional photoelectric conversion element. This conventional photoelectric conversion element differs from the photoelectric conversion element of the embodiment of the present invention shown in tracks 4jA and B in that it does not have a diffusion layer 4 - that is, it does not undergo a final heat treatment in the manufacturing process. However, everything else is the same, and the measurement conditions are also the same.
曲線Ａ、Ｂおよび点線０．Ｄの比較から明らかなように
本発明の光電変換素子は従来の光電変換素子に比べて暗
電流が大幅に低減されており、明暗比は１桁以上も改善
されている。Curves A, B and dotted line 0. As is clear from the comparison of D, the photoelectric conversion element of the present invention has significantly reduced dark current and improved brightness ratio by more than one order of magnitude compared to the conventional photoelectric conversion element.
更忙、酸化インジウム錫電極の着膜条件について考察す
る。Next, we will discuss the deposition conditions for indium tin oxide electrodes.
比較の為に、アモルファスシリコンｊ轟の形成までは、
同様に行ない、ＤＣスパッタリングの際、電力密度を最
初から２００ｍＷ／ｉとし、着膜速度を高めて、酸化イ
ンジウム錫′Ｆ！Ｌｉｖ形成し、同様の熱処理工程な経
て形成された光電変換素子の光電流、暗電流特性曲線を
、夫々１点鎖線ｍ、ｙで示す、測定条件は、本発明実施
例の測定条件と同様である。For comparison, until the formation of amorphous silicon J.
In the same manner, during DC sputtering, the power density was set to 200 mW/i from the beginning, the film deposition rate was increased, and indium tin oxide'F! The photocurrent and dark current characteristic curves of the photoelectric conversion element formed after LIV formation and the same heat treatment process are shown by the dashed-dotted lines m and y, respectively.The measurement conditions are the same as those of the examples of the present invention. be.
曲線Ａ、Ｂと１点鎖線Ｉｎ、Ｆどの比較から明らか７ｇ
ように、ＤＣスパッタリング法による酸化インジウム錫
膜の初期の着膜速度が速いと、熱処理による拡散工程を
経ても暗電流の量はほとんと低減されず、かえって高め
られている。It is clear from the comparison between curves A and B and dashed lines In and F that it is 7g.
Thus, when the initial deposition rate of the indium tin oxide film by the DC sputtering method is high, the amount of dark current is not reduced at all even after the diffusion step by heat treatment, but rather increases.
従って明暗比も悪い。Therefore, the contrast ratio is also poor.
第４図及び第５図は夫々、本発明実施例及び従来の光電
変換素子におけるアモルファスシリコン−酸化インジウ
ム錫接合−１の近傍での元素粗或をオージェ分析により
調べた結果を示すものでキゼノン（Ｘｓ ）ガスによる
イオンエツチングにより酸化インジウム錫膜側からアモ
ルファスシリコン側へエツチングを行ないつつ、測定し
たものである。第４図、第５図いずれにおいても、縦軸
は、含有率（％）、４Ｍ ！ｔ’ｌｌｌはエツチング時
間（分）を示している。FIGS. 4 and 5 show the results of Auger analysis of elemental concentrations near the amorphous silicon-indium tin oxide junction-1 in the example of the present invention and the conventional photoelectric conversion element, respectively. Xs) Measurements were taken while etching was performed from the indium tin oxide film side to the amorphous silicon side by ion etching using gas. In both Figures 4 and 5, the vertical axis represents the content (%), 4M! t'llll indicates etching time (minutes).
第４図から明らかなよ５ Ｋ 、本発明実施例の光電変
換素子においては、酸化インジウム錫とアモルファスシ
リコンの接合部で、酸化インツウＡ１１ｌｌＮ中ニシリ
コンＳ１が、アモルファスシリコン中に酸素０、インジ
ウムエｎ１錫ｓｎが相互拡散している。そして、５ｉ−
０結合の際に現われる特徴的ｌよビークが現われプよい
ことから、アモルファスシリコン中に拡散した酸素のウ
チシリコンと直接結合しているものは少Ｉ工り、むしろ
、そのほとんどが、酸化インジウノ・錫の微結晶モしく
はアモルファスとしてアモルファスシリコン中に拡散し
ているものと考えられる。As is clear from FIG. 4, in the photoelectric conversion element of the embodiment of the present invention, at the junction of indium tin oxide and amorphous silicon, silicon S1 in indium oxide A1111N has 0 oxygen and indium tin 1 in amorphous silicon. Tin sn is mutually diffused. And 5i-
Since the characteristic l peak that appears when bonding with zero is clearly visible, it is difficult to see that the oxygen diffused into the amorphous silicon is directly bonded to the silicon; in fact, most of it is indium oxide. It is thought that tin is diffused into amorphous silicon as microcrystalline or amorphous tin.
第５図は、第４図に、測定結果を示された光電変換素子
よりも、酸化インジウム錫膜Ｙ Ｄ Ｏスパッタリング
法によつ°ＣＭ膜する際の電力密度を上げ、着膜速度を
高めたものについて測定したもので、酸化インジウム錫
とアモルファスシリコンの接合部にシリコン−酸素（５
ｉ−０）の結合ピークが現われており、接合部で反応が
起り、酸化シリコンＳ１０．と化してしまい、相互拡散
はほとんど行なわれていないことがわかる。Fig. 5 shows a photoelectric conversion element whose measurement results are shown in Fig. 4 by increasing the power density and increasing the film deposition rate when forming the °CM film by the indium tin oxide film YDO sputtering method. This was measured on a silicon-oxygen (55%
i-0) appears, a reaction occurs at the junction, and silicon oxide S10. It can be seen that there is almost no mutual diffusion.
このように酸化シリコンＳ ｉ Ｏ，が形成される理由
と、しては、スパッタリングの際、初期の電力密度が高
い為に、スパッタリング中にシリコン−シリコン（Ｅｌ
ｉ−８ｉ ） 、シリコン−水素（Ｓｉ−Ｈ）の結合が
切れ【、酸素０と結合する為と考えられる。The reason why silicon oxide S i O is formed in this way is that during sputtering, the initial power density is high, so silicon-silicon (El) is formed during sputtering.
i-8i), the silicon-hydrogen (Si-H) bond is broken [, and this is thought to be due to bonding with oxygen 0.
以上、説明し【きたように、本発明によれば、光導電体
としてのアモルファスシリコン層を、第１電極と金属酸
化物よりなる透光性の第２を極とによって挾持してなる
サンドイッチ措造の光電変換素子において、金属酸化物
とアモルファスシリコン層との接合部に、相互拡散層を
形成することにより、アモルファスシリコンのバンドギ
ャップが広がり、酸化インジウム錫とアモルファスシリ
コン間の電子に対する電位障壁カ高められ、酸化インジ
ウム錫側からアモルファスシリコン中への電子の注入が
抑制される結果、暗電流を低減することが可能となり、
明暗比が大幅に改善される。As described above, according to the present invention, a sandwich device is formed by sandwiching an amorphous silicon layer as a photoconductor between a first electrode and a transparent second electrode made of a metal oxide. In a manufactured photoelectric conversion element, by forming an interdiffusion layer at the junction between the metal oxide and the amorphous silicon layer, the band gap of the amorphous silicon is widened and the potential barrier force for electrons between the indium tin oxide and the amorphous silicon is increased. As a result, the injection of electrons from the indium tin oxide side into the amorphous silicon is suppressed, making it possible to reduce dark current.
The contrast ratio is greatly improved.
第五図は、本発明実施例の光電変換素子の平面図、第２
図は、ｔ４１図のＡ−Ａ断面図、第３図は本発明実施例
及び従来の光電変換素子の電流−電圧特性曲線を示す図
、第４図は、本発明実施例の光電変換素子の接合部の組
成元素の分析結果を示す図、５１５図は、第４図に示さ
れた結果と比較するための従来例についての分析結果を
示す図である。
ｌ・・・基板、２・・・クロム電極、３・・・アモルフ
ァスシリコン層、４・・・拡散層、５・・・酸化インジ
ウム錫電極
Ａ・・・本発明実施例の光電変換素子忙おける光電流の
電流電圧特性曲線
Ｂ・・・同暗電流の電流電圧特性曲線
０、ｍ・・・従来例の光電変換素子における光電流の電
流電圧特性曲線
り、Ｆ・・・同暗電流の電流電圧特性曲線。
第１図。
一つ −Ｉす第４図
エッチ〉７時間（分）FIG. 5 is a plan view of a photoelectric conversion element according to an embodiment of the present invention;
The figure is a sectional view taken along the line A-A in the t41 diagram, FIG. 3 is a diagram showing current-voltage characteristic curves of the photoelectric conversion element according to the embodiment of the present invention and the conventional photoelectric conversion element, and FIG. 4 is a diagram showing the current-voltage characteristic curve of the photoelectric conversion element according to the embodiment of the present invention. FIG. 515, a diagram showing the analysis results of the compositional elements of the joint, is a diagram showing the analysis results of the conventional example for comparison with the results shown in FIG. 4. l...Substrate, 2...Chromium electrode, 3...Amorphous silicon layer, 4...Diffusion layer, 5...Indium tin oxide electrode A...Photoelectric conversion element according to the embodiment of the present invention Current-voltage characteristic curve of photocurrent B... Current-voltage characteristic curve of dark current 0, m... Current-voltage characteristic curve of photocurrent in the conventional photoelectric conversion element, F... Current of dark current Voltage characteristic curve. Figure 1. One -I Figure 4 Sex〉7 hours (minutes)
Claims (1)
（４）を、第１電極と金属酸化物からなる透光性の第２
電極とで挾持してなるサンドイッチ借造の光電変換素子
において、前記第２電極とアモルファスシリコン層との
接合部ｂ′−相互拡散層を構成していることを特徴とす
る光電変換 ３゜素子、
〔（２）前記金属酸化物が酸化インジウム
、酸化インジウム錫、酸化錫、酸化カドミウム錫のう
りちのいずれかであることを特徴とする特許請
請求の範囲第（１）項記載の光電変換素子、
〔（３）基板上に１第ｆｉｌ極を形成し、次いで、光
導電体としてのアモルファスシリコン層を形ヲ１成し、
更にこのアモルファスシリコン層に損 素・傷を与え
ないように粒子エネルギを抑制しっ 読。 極を形成したのちに、前記アモルファスシリコン層と第
２電極との接合部に拡散層を形成すべく、熱処理を行な
うことを特徴とする光電変換素子の製造方法。 前記熱処理は、所定の領域の形成された素子を酸素雰囲
気中で１５０〜２５０ＣＫ加熱する工程によって行なわ
れることを特徴とする特許請求の範囲第（３）項記載の
光電変換素子の製造方法。[Claims] (Amorphous silicon as a photoconductor
(4), the first electrode and a transparent second electrode made of a metal oxide.
A 3° photoelectric conversion element sandwiched between electrodes, characterized in that the junction b' between the second electrode and the amorphous silicon layer constitutes an interdiffusion layer.
[(2) The metal oxide may be indium oxide, indium tin oxide, tin oxide, cadmium tin oxide, etc.
A patent application characterized in that it is either
A photoelectric conversion element according to claim (1),
[(3) Forming a first filtration pole on the substrate, then forming an amorphous silicon layer as a photoconductor,
Furthermore, particle energy is carefully controlled to prevent damage and scratches to this amorphous silicon layer. A method for manufacturing a photoelectric conversion element, characterized in that after forming the pole, heat treatment is performed to form a diffusion layer at the junction between the amorphous silicon layer and the second electrode. 3. The method of manufacturing a photoelectric conversion element according to claim 3, wherein the heat treatment is performed by heating the formed element in a predetermined region for 150 to 250 CK in an oxygen atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58102164A JPH0634407B2 (en) | 1983-06-08 | 1983-06-08 | Photoelectric conversion element and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58102164A JPH0634407B2 (en) | 1983-06-08 | 1983-06-08 | Photoelectric conversion element and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59227173A true JPS59227173A (en) | 1984-12-20 |
| JPH0634407B2 JPH0634407B2 (en) | 1994-05-02 |
Family
ID=14320068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58102164A Expired - Lifetime JPH0634407B2 (en) | 1983-06-08 | 1983-06-08 | Photoelectric conversion element and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0634407B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55121685A (en) * | 1979-03-12 | 1980-09-18 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
| JPS57152174A (en) * | 1981-03-13 | 1982-09-20 | Hitachi Ltd | Manufacture of light receiving device |
-
1983
- 1983-06-08 JP JP58102164A patent/JPH0634407B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55121685A (en) * | 1979-03-12 | 1980-09-18 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
| JPS57152174A (en) * | 1981-03-13 | 1982-09-20 | Hitachi Ltd | Manufacture of light receiving device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0634407B2 (en) | 1994-05-02 |
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