JPS6465868A - Solid-state image sensor - Google Patents
Solid-state image sensorInfo
- Publication number
- JPS6465868A JPS6465868A JP62221207A JP22120787A JPS6465868A JP S6465868 A JPS6465868 A JP S6465868A JP 62221207 A JP62221207 A JP 62221207A JP 22120787 A JP22120787 A JP 22120787A JP S6465868 A JPS6465868 A JP S6465868A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- insulating film
- light generating
- gate insulating
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To obtain a solid-state image sensor capable of being micronized which has functions such as an internal amplification, a nondestructive read, and a light signal memory function by a method wherein a gate insulating film of a gate storage type MOS photo FET is made to have a charge trap effect. CONSTITUTION:An N-type epitaxial layer 2 is made to overlap a P-type substrate 1, and a source 3 and a drain 4 both of N-type are diffused. A gate insulating film 7 composed of two layers, a SiO2 film 5 20-50Angstrom in thickness and a Si3N4 film 6 about 500Angstrom in thickness, is formed on a channel region. Al electrodes 8 and 9 are provided to the N<+> layers 3 and 4, and a transparent electrode 10 formed of SnO2 or the like is provided to the gate insulating film 7. By this structure, it can be provided with an internal amplification function the same as a conventional gate storage type POS photo FRT, light generating charges are stored just under a gate for a certain period as a gate electrode is kept in an invertedly biased state, and then when an inverted bias which makes light generating charges tunnel through the gate insulating film is applied, the light generating charges can be injected into a gate film and trapped there, and thus optical signals can be memorized. And, a transfer gate for light generating charges storage can be dispensed with and the sensor can be micronized.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62221207A JPS6465868A (en) | 1987-09-05 | 1987-09-05 | Solid-state image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62221207A JPS6465868A (en) | 1987-09-05 | 1987-09-05 | Solid-state image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6465868A true JPS6465868A (en) | 1989-03-13 |
Family
ID=16763142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62221207A Pending JPS6465868A (en) | 1987-09-05 | 1987-09-05 | Solid-state image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6465868A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6727522B1 (en) * | 1998-11-17 | 2004-04-27 | Japan Science And Technology Corporation | Transistor and semiconductor device |
-
1987
- 1987-09-05 JP JP62221207A patent/JPS6465868A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6727522B1 (en) * | 1998-11-17 | 2004-04-27 | Japan Science And Technology Corporation | Transistor and semiconductor device |
US7064346B2 (en) | 1998-11-17 | 2006-06-20 | Japan Science And Technology Agency | Transistor and semiconductor device |
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