JPS55132066A - Hall effect semiconductor integrated circuit - Google Patents
Hall effect semiconductor integrated circuitInfo
- Publication number
- JPS55132066A JPS55132066A JP3998979A JP3998979A JPS55132066A JP S55132066 A JPS55132066 A JP S55132066A JP 3998979 A JP3998979 A JP 3998979A JP 3998979 A JP3998979 A JP 3998979A JP S55132066 A JPS55132066 A JP S55132066A
- Authority
- JP
- Japan
- Prior art keywords
- hall element
- element part
- conductive layer
- current
- channeled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To improve sensitivity of IC incorporated in a Hall element by a method wherein a channeled conductive layer same in conductivity as a Hall element part and in high impurity density is formed in the Hall element part, and an unbalance of primary current in the Hall element is corrected.
CONSTITUTION: A Hall element part 11 isolated with a pn-junction 10 is provided in an Si substrate 9, and a plural channeled conductive layer is formed on the surface layer. A suitable mask is used for formation of the layer 12, an impurity same in conductivity as the Hall element part 11 is doped at high density through ion implantation, and the passage of current is regulated at this part to improve sharply an uneven current distribution due to unevenness of a carrier distribution in the Hall element and crystal defect. Consequently, when a magnetic field is zero, an unbalance of potential between current collector electrodes 4 and 5 is improved, the value of an offset magnetic field can be minimized, thus improving an IC sensitivity incorporated in the Hall element. The conductive layer 12 may be provided on the bottom or in the middle of the Hall element part 11, and its longitudinal division into two parts is also effective.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3998979A JPS55132066A (en) | 1979-04-02 | 1979-04-02 | Hall effect semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3998979A JPS55132066A (en) | 1979-04-02 | 1979-04-02 | Hall effect semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55132066A true JPS55132066A (en) | 1980-10-14 |
| JPS6214115B2 JPS6214115B2 (en) | 1987-03-31 |
Family
ID=12568341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3998979A Granted JPS55132066A (en) | 1979-04-02 | 1979-04-02 | Hall effect semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55132066A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7372119B2 (en) | 2001-10-01 | 2008-05-13 | Asahi Kasei Microsystems Co., Ltd. | Cross-shaped Hall device having extensions with slits |
| US7843190B2 (en) | 2005-12-16 | 2010-11-30 | Asahi Kasei Emd Corporation | Position detection apparatus |
| CN103956427A (en) * | 2014-04-01 | 2014-07-30 | 友达光电股份有限公司 | Sensing element |
-
1979
- 1979-04-02 JP JP3998979A patent/JPS55132066A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7372119B2 (en) | 2001-10-01 | 2008-05-13 | Asahi Kasei Microsystems Co., Ltd. | Cross-shaped Hall device having extensions with slits |
| US7843190B2 (en) | 2005-12-16 | 2010-11-30 | Asahi Kasei Emd Corporation | Position detection apparatus |
| CN103956427A (en) * | 2014-04-01 | 2014-07-30 | 友达光电股份有限公司 | Sensing element |
| US9590172B2 (en) | 2014-04-01 | 2017-03-07 | Au Optronics Corporation | Sensing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6214115B2 (en) | 1987-03-31 |
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