JPS5294780A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5294780A
JPS5294780A JP1110476A JP1110476A JPS5294780A JP S5294780 A JPS5294780 A JP S5294780A JP 1110476 A JP1110476 A JP 1110476A JP 1110476 A JP1110476 A JP 1110476A JP S5294780 A JPS5294780 A JP S5294780A
Authority
JP
Japan
Prior art keywords
electric power
planar type
power transistor
semiconductor device
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Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1110476A
Other languages
Japanese (ja)
Inventor
Hiroshi Saikai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1110476A priority Critical patent/JPS5294780A/en
Publication of JPS5294780A publication Critical patent/JPS5294780A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To minimize the parts number with reduced area by incorporating planar type driving transistor of Darlington connection, planar type electric power transistor plus the resistance which connects emitter and base of electric power transistor into same semiconductor substrate.
JP1110476A 1976-02-04 1976-02-04 Semiconductor device Pending JPS5294780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1110476A JPS5294780A (en) 1976-02-04 1976-02-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1110476A JPS5294780A (en) 1976-02-04 1976-02-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5294780A true JPS5294780A (en) 1977-08-09

Family

ID=11768692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1110476A Pending JPS5294780A (en) 1976-02-04 1976-02-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5294780A (en)

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