JPS5263072A - Mesa type semiconductor device - Google Patents
Mesa type semiconductor deviceInfo
- Publication number
- JPS5263072A JPS5263072A JP13810175A JP13810175A JPS5263072A JP S5263072 A JPS5263072 A JP S5263072A JP 13810175 A JP13810175 A JP 13810175A JP 13810175 A JP13810175 A JP 13810175A JP S5263072 A JPS5263072 A JP S5263072A
- Authority
- JP
- Japan
- Prior art keywords
- mesa type
- semiconductor device
- type semiconductor
- mesa
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To produce a mesa type high-dielectric-strength semiconductor element by making the central portion of a high resistance layer thinner than its peripheral portions and providing channels in this portion.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13810175A JPS5263072A (en) | 1975-11-19 | 1975-11-19 | Mesa type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13810175A JPS5263072A (en) | 1975-11-19 | 1975-11-19 | Mesa type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5263072A true JPS5263072A (en) | 1977-05-25 |
Family
ID=15213963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13810175A Pending JPS5263072A (en) | 1975-11-19 | 1975-11-19 | Mesa type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5263072A (en) |
-
1975
- 1975-11-19 JP JP13810175A patent/JPS5263072A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS51126761A (en) | Schottky barrier type semi-conductor unit | |
JPS5417666A (en) | Lead frame | |
JPS524787A (en) | Transistor containing embedded base | |
JPS5263072A (en) | Mesa type semiconductor device | |
JPS51132973A (en) | Semiconductor device | |
JPS5324290A (en) | Semiconductor device | |
JPS52129380A (en) | Semiconductor device | |
JPS538072A (en) | Semiconductor device | |
JPS5228868A (en) | Semiconductor device | |
JPS52153383A (en) | Preparation of semiconductor device | |
JPS5379461A (en) | Semiconductor device and its manufacturing process | |
JPS5353965A (en) | Semiconductor device and its production | |
JPS5363866A (en) | Production of semiconductor device | |
JPS5210084A (en) | Dual directional negative resistance semiconductor device | |
JPS52179A (en) | Method of fabricating semiconductor | |
JPS51118965A (en) | Insulation film of semiconductor device | |
JPS51112292A (en) | Semiconductor device | |
JPS5395580A (en) | Semiconductor device | |
JPS5310279A (en) | Mesa type semiconductor device | |
JPS52119067A (en) | Semiconductor device | |
JPS51139788A (en) | Photosemiconductor device | |
JPS5377168A (en) | Production of semiconductor device | |
JPS5338984A (en) | Manufacture of semiconductor device | |
JPS5223279A (en) | Bilateral semiconductor negative resistance element | |
JPS5260083A (en) | Production of semiconductor device |