JPS51136248A - Ferroelectric fet memory device - Google Patents

Ferroelectric fet memory device

Info

Publication number
JPS51136248A
JPS51136248A JP5957475A JP5957475A JPS51136248A JP S51136248 A JPS51136248 A JP S51136248A JP 5957475 A JP5957475 A JP 5957475A JP 5957475 A JP5957475 A JP 5957475A JP S51136248 A JPS51136248 A JP S51136248A
Authority
JP
Japan
Prior art keywords
memory device
fet memory
ferroelectric fet
ferroelectric
accumulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5957475A
Other languages
Japanese (ja)
Inventor
Hidetoshi Tsuchiya
Kentaro Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba TEC Corp
Original Assignee
Tokyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electric Co Ltd filed Critical Tokyo Electric Co Ltd
Priority to JP5957475A priority Critical patent/JPS51136248A/en
Publication of JPS51136248A publication Critical patent/JPS51136248A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Abstract

PURPOSE:High speed and high density integrated ferro electric FET memory device allowed by accumulating semi-conductor and ferroelectric substance on substrate on isolator board.
JP5957475A 1975-05-21 1975-05-21 Ferroelectric fet memory device Pending JPS51136248A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5957475A JPS51136248A (en) 1975-05-21 1975-05-21 Ferroelectric fet memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5957475A JPS51136248A (en) 1975-05-21 1975-05-21 Ferroelectric fet memory device

Publications (1)

Publication Number Publication Date
JPS51136248A true JPS51136248A (en) 1976-11-25

Family

ID=13117126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5957475A Pending JPS51136248A (en) 1975-05-21 1975-05-21 Ferroelectric fet memory device

Country Status (1)

Country Link
JP (1) JPS51136248A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0322483A (en) * 1989-06-19 1991-01-30 Fujitsu Ltd Thin-film transistor
EP0496764A1 (en) * 1989-10-20 1992-08-05 Radiant Technologies Ferro-electric non-volatile variable resistive element

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TRANSACTIONS OF IEEE ELECTRON DEVICES#M8=1974 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0322483A (en) * 1989-06-19 1991-01-30 Fujitsu Ltd Thin-film transistor
EP0496764A1 (en) * 1989-10-20 1992-08-05 Radiant Technologies Ferro-electric non-volatile variable resistive element

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