JPS5235987A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5235987A
JPS5235987A JP50110979A JP11097975A JPS5235987A JP S5235987 A JPS5235987 A JP S5235987A JP 50110979 A JP50110979 A JP 50110979A JP 11097975 A JP11097975 A JP 11097975A JP S5235987 A JPS5235987 A JP S5235987A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
masks
lowering
realizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50110979A
Other languages
Japanese (ja)
Inventor
Kenji Kaneko
Takahiro Okabe
Yoshito Omura
Hiroshi Kodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50110979A priority Critical patent/JPS5235987A/en
Publication of JPS5235987A publication Critical patent/JPS5235987A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To make possible the improvement of lowering the working hours and increasing yield rate by realizing an integrated and injected logic circuit with only three masks.
JP50110979A 1975-09-16 1975-09-16 Semiconductor integrated circuit Pending JPS5235987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50110979A JPS5235987A (en) 1975-09-16 1975-09-16 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50110979A JPS5235987A (en) 1975-09-16 1975-09-16 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5235987A true JPS5235987A (en) 1977-03-18

Family

ID=14549315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50110979A Pending JPS5235987A (en) 1975-09-16 1975-09-16 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5235987A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52147083A (en) * 1976-06-02 1977-12-07 Agency Of Ind Science & Technol Semiconductor devices and integrated circuit using the same
JPS5422783A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Iil semiconductor device and its manufacture
JPS5591862A (en) * 1978-12-30 1980-07-11 Fujitsu Ltd Semiconductor device
US4255207A (en) * 1979-04-09 1981-03-10 Harris Corporation Fabrication of isolated regions for use in self-aligning device process utilizing selective oxidation
JPS5635458A (en) * 1979-08-30 1981-04-08 Seiko Instr & Electronics Ltd Manufacture of integrated circuit device
JPS5635457A (en) * 1979-08-30 1981-04-08 Seiko Instr & Electronics Ltd Integrated circuit device and manufacture thereof
US4269636A (en) * 1978-12-29 1981-05-26 Harris Corporation Method of fabricating self-aligned bipolar transistor process and device utilizing etching and self-aligned masking
JPS5840854A (en) * 1982-08-09 1983-03-09 Hitachi Ltd Semiconductor integrated circuit device
US4670769A (en) * 1979-04-09 1987-06-02 Harris Corporation Fabrication of isolated regions for use in self-aligning device process utilizing selective oxidation

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52147083A (en) * 1976-06-02 1977-12-07 Agency Of Ind Science & Technol Semiconductor devices and integrated circuit using the same
JPS574098B2 (en) * 1976-06-02 1982-01-25
JPS5422783A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Iil semiconductor device and its manufacture
US4269636A (en) * 1978-12-29 1981-05-26 Harris Corporation Method of fabricating self-aligned bipolar transistor process and device utilizing etching and self-aligned masking
US4420874A (en) * 1978-12-30 1983-12-20 Fujitsu Limited Method of producing an IIL semiconductor device utilizing self-aligned thickened oxide patterns
JPS5591862A (en) * 1978-12-30 1980-07-11 Fujitsu Ltd Semiconductor device
JPS6043024B2 (en) * 1978-12-30 1985-09-26 富士通株式会社 Manufacturing method of semiconductor device
US4255207A (en) * 1979-04-09 1981-03-10 Harris Corporation Fabrication of isolated regions for use in self-aligning device process utilizing selective oxidation
US4670769A (en) * 1979-04-09 1987-06-02 Harris Corporation Fabrication of isolated regions for use in self-aligning device process utilizing selective oxidation
JPS5635457A (en) * 1979-08-30 1981-04-08 Seiko Instr & Electronics Ltd Integrated circuit device and manufacture thereof
JPS5635458A (en) * 1979-08-30 1981-04-08 Seiko Instr & Electronics Ltd Manufacture of integrated circuit device
JPS6214103B2 (en) * 1979-08-30 1987-03-31 Seiko Denshi Kogyo Kk
JPH0412029B2 (en) * 1979-08-30 1992-03-03 Seiko Instr & Electronics
JPS5840854A (en) * 1982-08-09 1983-03-09 Hitachi Ltd Semiconductor integrated circuit device
JPH0414508B2 (en) * 1982-08-09 1992-03-13 Hitachi Ltd

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